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    Microchip Technology Inc APT30DF100HJ

    BRIDGE RECT 1P 1KV 45A SOT227
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    APT30DF100 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30DF100HJ Microsemi Diodes, Rectifiers - Modules, Discrete Semiconductor Products, MOD DIODE 1000V SOT-227 Original PDF

    APT30DF100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: APT30DF100HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1000V IC = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • •


    Original     		PDF APT30DF100HJ OT-227) Absolute84)

    Untitled

    Abstract: No abstract text available
    Text: APT30DF100HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1000V IC = 30A @ Tc = 80°C Application •    Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~       


    Original     		PDF APT30DF100HJ OT-227)

    Untitled

    Abstract: No abstract text available
    Text: APT8020JFLL 800V POWER MOS 7 R 33A 0.220Ω FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8020JFLL OT-227 E145592 VGSM25

    IGBT 900V 80A

    Abstract: APT40GP90B2DF2
    Text: TYPICAL PERFORMANCE CURVES APT40GP90B2DF2 APT40GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90B2DF2 APT40GP90B2DF2 IGBT 900V 80A

    Untitled

    Abstract: No abstract text available
    Text: APT8020B2FLL APT8020LFLL 38A 0.220Ω 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8020B2FLL APT8020LFLL O-264 O-264 T-MA15) O-247

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    APT8020JLL

    Abstract: APT30DF100
    Text: APT8020JLL 800V POWER MOS 7 R 33A 0.200Ω MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8020JLL OT-227 APT8020JLL APT30DF100

    Untitled

    Abstract: No abstract text available
    Text: APT8020JLL 33A 0.200Ω 800V POWER MOS 7 R MOSFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8020JLL OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT8020B2LL APT8020LLL 0.200Ω 800V 38A B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8020B2LL APT8020LLL O-264 O-264 O-247

    APT8020B2FLL

    Abstract: APT8020LFLL
    Text: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8020B2FLL APT8020LFLL O-264 O-264 O-247 APT8020B2FLL APT8020LFLL

    APT8020JFLL

    Abstract: V120DD
    Text: APT8020JFLL 800V POWER MOS 7 R 33A 0.220Ω FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8020JFLL E145592 OT-227 APT8020JFLL V120DD

    IGBT 900V 80A

    Abstract: 196F 20A 100 V ISOTOP Diode 20A 1,0V ISOTOP
    Text: APT40GP90JDF2 APT40GP90JDF2 TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90JDF2 APT40GP90JDF2 IGBT 900V 80A 196F 20A 100 V ISOTOP Diode 20A 1,0V ISOTOP

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: APT40GP90JDF2 APT40GP90JDF2 TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90JDF2 APT40GP90JDF2

    IGBT 900V 80A

    Abstract: 228F APT40GP90B T0-247
    Text: APT40GP90B TYPICAL PERFORMANCE CURVES APT40GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90B O-247 IGBT 900V 80A 228F APT40GP90B T0-247

    228F

    Abstract: APT40GP90B2DF2
    Text: TYPICAL PERFORMANCE CURVES APT40GP90B2DF2 APT40GP90B2DF2 900V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90B2DF2 228F APT40GP90B2DF2

    Untitled

    Abstract: No abstract text available
    Text: APT8020JFLL 33A 0.220Ω 800V POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8020JFLL E145592 OT-227

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301

    Untitled

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT40GP90B APT40GP90B 900V POWER MOS 7 IGBT TO-247 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90B O-247

    APT8020B2FLL

    Abstract: APT8020LFLL
    Text: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8020B2FLL APT8020LFLL O-264 O-264 O-247 APT8020B2FLL APT8020LFLL

    APT8020B2LL

    Abstract: APT8020LLL
    Text: APT8020B2LL APT8020LLL 800V 38A 0.200Ω B2LL POWER MOS 7 R MOSFET T-MAX TO-264 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8020B2LL APT8020LLL O-264 O-264 O-247 APT8020B2LL APT8020LLL

    APT8020JFLL

    Abstract: 0173F
    Text: APT8020JFLL 800V POWER MOS 7 R ID SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS VDSS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel


    Original     		PDF APT8020JFLL OT-227 APT8020JFLL 0173F

    Untitled

    Abstract: No abstract text available
    Text: APT8020B2FLL APT8020LFLL 800V POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT8020B2FLL APT8020LFLL O-264 O-247

    APT40GP90J

    Abstract: No abstract text available
    Text: APT40GP90J APT40GP90J TYPICAL PERFORMANCE CURVES 900V E E POWER MOS 7 IGBT C G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT40GP90J APT40GP90J