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    APT30GP60B Search Results

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    APT30GP60B Price and Stock

    Microchip Technology Inc APT30GP60BDQ1G

    IGBT PT 600V 100A TO247
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    DigiKey APT30GP60BDQ1G Tube 86 1
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    Avnet Americas APT30GP60BDQ1G Tube 26 Weeks 60
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    Mouser Electronics APT30GP60BDQ1G 1,328
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    Newark APT30GP60BDQ1G Bulk 60
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    Microchip Technology Inc APT30GP60BDQ1G
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    Onlinecomponents.com APT30GP60BDQ1G
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    TME APT30GP60BDQ1G 10 1
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    NAC APT30GP60BDQ1G Tube 44
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    Richardson RFPD APT30GP60BDQ1G 60
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    Microchip Technology Inc APT30GP60BG

    IGBT PT 600V 100A TO247
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    DigiKey APT30GP60BG Tube 70
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    Avnet Americas APT30GP60BG Tube 26 Weeks 70
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    Mouser Electronics APT30GP60BG 12
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    Newark APT30GP60BG Bulk 70
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    Microchip Technology Inc APT30GP60BG
    • 1 $7.95
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    Onlinecomponents.com APT30GP60BG
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    TME APT30GP60BG 1
    • 1 $14.2
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    NAC APT30GP60BG Tube 48
    • 1 $7.6
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    Richardson RFPD APT30GP60BG 5 1
    • 1 $7.1
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    Avnet Silica APT30GP60BG 28 Weeks 70
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    Microchip Technology Inc APT30GP60B2DLG

    IGBT PT 600V 100A TMAX
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    Microsemi Corporation APT30GP60BG

    Trans IGBT Chip N-CH 600V 100A 463000mW 3-Pin(3+Tab) TO-247
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    Chip1Stop APT30GP60BG 5
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    APT30GP60B Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30GP60B Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT30GP60B Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT30GP60B Microsemi Insulated Gate Bipolar Transistor-PT High Speed Original PDF
    APT30GP60B2DLG Microsemi Insulated Gate Bipolar Transistor - Resonant Mode; Package: T-MAX ; BV(CES) (V): 600; VCE(sat) (V): 2.2; IC (A): 45; Original PDF
    APT30GP60BD1 Advanced Power Technology IGBT, Power IGBT, VCE 600 V, IC 100 A Original PDF
    APT30GP60BDF1 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT30GP60BDQ1 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT30GP60BDQ1G Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT30GP60BDQ1G Advanced Power Technology IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 100A 463W TO247 Original PDF
    APT30GP60BDQ1G Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 100A 463W TO247 Original PDF
    APT30GP60BG Advanced Power Technology IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 100A 463W TO247 Original PDF
    APT30GP60BG Microsemi Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 600V 100A 463W TO247 Original PDF
    APT30GP60BSC Unknown High Voltage, 600V 100A, IGBT N-Type Original PDF

    APT30GP60B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT30GP60BDF1

    Abstract: No abstract text available
    Text: TYPICAL PERFORMANCE CURVES APT30GP60BDF1 APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT30GP60BDF1 O-247 APT30GP60BDF1

    Untitled

    Abstract: No abstract text available
    Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT30GP60BDF1 O-247

    30GP60BDF1

    Abstract: No abstract text available
    Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT30GP60BDF1 O-247 T0-247 30GP60BDF1

    SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

    Abstract: data sheet IC 7450 APT30GP60BSC T0-247 APT10SC60
    Text: TYPICAL PREFORMANCE CURVES APT30GP60BSC APT30GP60BSC 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT30GP60BSC O-247 SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A data sheet IC 7450 APT30GP60BSC T0-247 APT10SC60

    7400 IC

    Abstract: data sheet IC 7400 IC 7400 IC 7400 data sheet tl 7400 APT30GP60B APT30GP60S
    Text: APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,


    Original     		PDF APT30GP60B APT30GP60S 7400 IC data sheet IC 7400 IC 7400 IC 7400 data sheet tl 7400 APT30GP60B APT30GP60S

    7400 IC

    Abstract: APT30GP60B tl 7400 T0-247
    Text: APT30GP60B 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,


    Original     		PDF APT30GP60B O-247 7400 IC APT30GP60B tl 7400 T0-247

    APT30GP60B

    Abstract: T0-247 T0247 package
    Text: APT30GP60B 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,


    Original     		PDF APT30GP60B O-247 APT30GP60B T0-247 T0247 package

    Untitled

    Abstract: No abstract text available
    Text: APT30GP60B2DL G APT30GP60LDL(G) 600V, 30A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


    Original     		PDF APT30GP60B2DL APT30GP60LDL O-247

    APT30GP60BDQ1G

    Abstract: No abstract text available
    Text: APT30GP60BDQ1 G 600V TYPICAL PERFORMANCE CURVES APT30GP60BDQ1 APT30GP60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT30GP60BDQ1 APT30GP60BDQ1G* APT30GP60BDQ1G

    30GP60BDF1

    Abstract: 30GP
    Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT30GP60BDF1 O-247 T0-247 30GP60BDF1 30GP

    Untitled

    Abstract: No abstract text available
    Text: APT30GP60B 600V Mos 7™ Ultra Fast IGBT The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT30GP60B O-247 APT30GP60B T0-247

    Untitled

    Abstract: No abstract text available
    Text: APT30GP60B 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,


    Original     		PDF APT30GP60B O-247

    IC 7400

    Abstract: APT30GP60B APT30GP60S
    Text: APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,


    Original     		PDF APT30GP60B APT30GP60S IC 7400 APT30GP60B APT30GP60S

    APT30GP60LDL

    Abstract: No abstract text available
    Text: APT30GP60B2DL G APT30GP60LDL(G) 600V, 30A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


    Original     		PDF APT30GP60B2DL APT30GP60LDL

    APT30GP60LDL

    Abstract: APT30GS60BRDL 600V30A APT30GP60B2DLG
    Text: APT30GP60B2DL G APT30GP60LDL(G) 600V, 30A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


    Original     		PDF APT30GP60B2DL APT30GP60LDL O-247 APT30GS60BRDL 600V30A APT30GP60B2DLG

    APT30GP60BDQ1G

    Abstract: APT30GP60BDQ1
    Text: APT30GP60BDQ1 G 600V TYPICAL PERFORMANCE CURVES APT30GP60BDQ1 APT30GP60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT30GP60BDQ1 APT30GP60BDQ1 APT30GP60BDQ1G* APT30GP60BDQ1G

    Untitled

    Abstract: No abstract text available
    Text: APT30GP60BDQ1 G 600V TYPICAL PERFORMANCE CURVES APT30GP60BDQ1 APT30GP60BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT30GP60BDQ1 APT30GP60BDQ1 APT30GP60BDQ1G*

    APT30GP60BD1

    Abstract: T0-247 30A 600V Ultrafast Diode APT TO-247 NS6006
    Text: APT30GP60BD1 600V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT30GP60BD1 O-247 APT30GP60BD1 T0-247 30A 600V Ultrafast Diode APT TO-247 NS6006

    Untitled

    Abstract: No abstract text available
    Text: APT30GP60B APT30GP60S 600V B POWER MOS 7 IGBT TO A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switchmode power supplies and tail current sensitive applications. In many cases,


    Original     		PDF APT30GP60B APT30GP60S

    APT30GP60BDF1

    Abstract: No abstract text available
    Text: APT30GP60BDF1 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode


    Original     		PDF APT30GP60BDF1 O-247 APT30GP60BDF1

    APT0201

    Abstract: APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross
    Text: Application Note APT0302 Rev. A April 4, 2003 Latest Technology PT IGBTs vs. Power MOSFETs Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 USA Based on a paper presented at PCIM China 2003


    Original     		PDF APT0302 APT0201 APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF