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    Microchip Technology Inc APT30GP60LDLG

    IGBT PT 600V 100A TO264
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    APT30GP60LDL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30GP60LDLG Microsemi IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 100A 463W TO264 Original PDF

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    Abstract: No abstract text available
    Text: APT30GP60B2DL G APT30GP60LDL(G) 600V, 30A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


    Original     		PDF APT30GP60B2DL APT30GP60LDL O-247

    APT30GP60LDL

    Abstract: No abstract text available
    Text: APT30GP60B2DL G APT30GP60LDL(G) 600V, 30A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


    Original     		PDF APT30GP60B2DL APT30GP60LDL

    APT30GP60LDL

    Abstract: APT30GS60BRDL 600V30A APT30GP60B2DLG
    Text: APT30GP60B2DL G APT30GP60LDL(G) 600V, 30A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high


    Original     		PDF APT30GP60B2DL APT30GP60LDL O-247 APT30GS60BRDL 600V30A APT30GP60B2DLG