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    APT30GS60SRDQ2 Search Results

    APT30GS60SRDQ2 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT30GS60SRDQ2G Microsemi Insulated Gate Bipolar Transistor - NPT High Speed; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 2.8; IC (A): 30; Original PDF

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    mosfet 600V 30A

    Abstract: IGBT 400V 100KHZ 30A APT30GS60BRDQ2 MIC4452 MOSFET 40A 600V
    Text: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60BRDQ2 APT30GS60SRDQ2 100kHz, mosfet 600V 30A IGBT 400V 100KHZ 30A MIC4452 MOSFET 40A 600V

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60BRDQ2 APT30GS60SRDQ2 100kHz,

    Untitled

    Abstract: No abstract text available
    Text: APT30GS60BRDQ2 G APT30GS60SRDQ2(G) 600V, 30A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT30GS60BRDQ2 APT30GS60SRDQ2 100kHz, circuit016)