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    APT44 Price and Stock

    Microchip Technology Inc APT44F80L

    MOSFET N-CH 800V 47A TO264
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    Microchip Technology Inc APT44F80L
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    Onlinecomponents.com APT44F80L
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    Microchip Technology Inc APT44GA60B

    IGBT PT 600V 78A TO247
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    Microchip Technology Inc APT44GA60B
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    Onlinecomponents.com APT44GA60B
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    Microchip Technology Inc APT44F80B2

    MOSFET N-CH 800V 47A T-MAX
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    Microchip Technology Inc APT44F80B2
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    Onlinecomponents.com APT44F80B2
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    Richardson RFPD APT44F80B2 30
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    Microchip Technology Inc APT44GA60BD30

    IGBT PT 600V 78A TO247
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    Microchip Technology Inc APT44GA60BD30
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    Microchip Technology Inc APT44GA60BD30C

    IGBT 600V 78A 337W TO247
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    APT44 Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT44F80B2 Microsemi Power FREDFET; Package: T-MAX [B2]; ID (A): 47; RDS(on) (Ohms): 0.21; BVDSS (V): 800; Original PDF
    APT44F80L Microsemi Power FREDFET; Package: TO-264; ID (A): 47; RDS(on) (Ohms): 0.21; BVDSS (V): 800; Original PDF
    APT44GA60B Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 44; Original PDF
    APT44GA60BD30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 44; Original PDF
    APT44GA60BD30C Microsemi IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 78A 337W TO247 Original PDF
    APT44GA60S Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3 [S]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 44; Original PDF
    APT44GA60SD30 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 44; Original PDF

    APT44 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    apt44ga60b

    Abstract: No abstract text available
    Text: APT44GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B apt44ga60b

    APT44GA60B

    Abstract: APT44GA60BD30 APT44GA60SD30 MIC4452 SD30
    Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 APT44GA60SD30 APT44GA60B APT44GA60BD30 APT44GA60SD30 MIC4452 SD30

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT FEATURES APT44GA60SD30C TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT44GA60BD30C APT44GA60SD30C

    MIC4452

    Abstract: No abstract text available
    Text: APT44H60J 600V, 44A, 0.011Ω Max, trr ≤250ns N-Channel Ultrafast Recovery FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for maximum reliability in ZVS phase shifted bridge and other circuits through much reduced


    Original     		PDF APT44H60J 250ns MIC4452

    474J

    Abstract: No abstract text available
    Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 APT44GA60SD30 474J

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S switchin51

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60BD30 APT44GA60SD30

    APT44GA60BD30C

    Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a
    Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT44GA60BD30C APT44GA60SD30C APT44GA60BD30C Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a

    Untitled

    Abstract: No abstract text available
    Text: APT44F80B2 APT44F80L 800V, 47A, 0.21Ω Max trr ≤370ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT44F80B2 APT44F80L 370ns O-264 O-247

    A1013S

    Abstract: APT44F80L
    Text: APT44F80B2 APT44F80L 800V, 47A, 0.21Ω Max trr ≤370ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT44F80B2 APT44F80L 370ns O-264 APT44F80B2 APT44 O-247 A1013S APT44F80L

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S APT44GA60S

    APT44GA60B

    Abstract: APT44GA60S MIC4452
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S APT44GA60B APT44GA60S MIC4452

    APT44F80L

    Abstract: zvs flyback driver APT44F80B2 MIC4452
    Text: APT44F80B2 APT44F80L 800V, 47A, 0.21Ω Max trr ≤370ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT44F80B2 APT44F80L 370ns APT44( O-247 APT44F80L zvs flyback driver APT44F80B2 MIC4452

    APT44GA60B

    Abstract: APT44GA60S MIC4452
    Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low


    Original     		PDF APT44GA60B APT44GA60S APT44GA60B APT44GA60S MIC4452

    ZVS phase-shift converters

    Abstract: APT44F80L FREDFET zvs flyback driver APT44F80B2 MIC4452 max9330
    Text: APT44F80B2 APT44F80L 800V, 44A, 0.24Ω Max, trr ≤370ns N-Channel FREDFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source body diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft


    Original     		PDF APT44F80B2 APT44F80L 370ns O-264 APT44F8040) O-247 ZVS phase-shift converters APT44F80L FREDFET zvs flyback driver APT44F80B2 MIC4452 max9330

    Untitled

    Abstract: No abstract text available
    Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise


    Original     		PDF APT44GA60BD30C APT44GA60SD30C

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    amidon 43 toroid core

    Abstract: amidon toroid core balun APT9702 hf wide band class AB power amplifier mosfet FERRITE TRANSFORMER 500W APT9802 amidon toroid core HF Amplifier 300w hf amplifier for transformer 1000 watt ferrite transformer
    Text: APPLICATION NOTE APT9802 By: Richard Frey, P.E. A 300W MOSFET Linear Amplifier for 50 MHz Reprinted from the May/June 1999 Issue of QEX Magazine Courtesy of ARRL, Inc. A 300W MOSFET Linear Amplifier for 50 MHz Richard Frey, Sr. Applications Engineer, Advanced Power Technology, Inc., Bend, Oregon USA


    Original     		PDF APT9802 ARF448A/B amidon 43 toroid core amidon toroid core balun APT9702 hf wide band class AB power amplifier mosfet FERRITE TRANSFORMER 500W APT9802 amidon toroid core HF Amplifier 300w hf amplifier for transformer 1000 watt ferrite transformer

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Solar Solutions Fllex Diodes Dio ode des s Flex Semiconductor Inverter Modules The IDEAL Solar Bypass Solution Discrete Disc Di s re r Components TM LX2400 The IDEAL Solar Bypass Solution TM • Negligible Heat Generation – CoolRUNTM Technology - Less than 10°C rise at 10A


    Original     		PDF LX2400 LX2400â

    VRF2933FL

    Abstract: VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301
    Text: Power Products MICROSEMI POWER PORTFOLIOPortfolio 2014-2015 Power Products New image here TBD Power Semiconductors Power Modules RF Power MOSFETs Power Matters. About Microsemi Microsemi Corporation Nasdaq: MSCC offers a comprehensive portfolio of semiconductor and system


    Original     		PDF MS5-001-14 VRF2933FL VRF164FL ARF463AP1 Non - Isolated Buck, application DRF1301