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    APT50GS60BR Search Results

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    APT50GS60BR Price and Stock

    Microchip Technology Inc APT50GS60BRDQ2G

    IGBT NPT 600V 93A TO247
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    DigiKey APT50GS60BRDQ2G Tube 8 1
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    NAC APT50GS60BRDQ2G Tube 60
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    Richardson RFPD APT50GS60BRDQ2G 1
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    Microchip Technology Inc APT50GS60BRG

    IGBT NPT 600V 93A TO247
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    Richardson RFPD APT50GS60BRG 1
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    Microsemi Corporation APT50GS60BRDQ2G

    Igbt 600V 93A 415W To247 |Microsemi APT50GS60BRDQ2G
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    Newark APT50GS60BRDQ2G Bulk 1
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    Microsemi Corporation APT50GS60BRG

    INSULATED GATE BIPOLAR TRANSISTOR, 93A I(C), 600V V(BR)CES, N-CHANNEL, TO-247AD
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    Quest Components APT50GS60BRG 14
    • 1 $19.5
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    APT50GS60BR Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    APT50GS60BRDLG Microsemi Insulated Gate Bipolar Transistor - Resonant Mode; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2.8; IC (A): 50; Original PDF
    APT50GS60BRDQ2G Microsemi IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 93A 415W TO247 Original PDF
    APT50GS60BRDQ2G Microsemi Insulated Gate Bipolar Transistor - NPT High Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2.8; IC (A): 50; Original PDF
    APT50GS60BRG Microsemi Insulated Gate Bipolar Transistor - NPT High Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2.8; IC (A): 50; Original PDF

    APT50GS60BR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    welding inverter 100A WITH PFC

    Abstract: MOSFET welding INVERTER 200A igbt full h bridge 25A apt50gs60brdq2g 600V50A
    Text: APT50GS60BRDQ2 G APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BRDQ2 APT50GS60SRDQ2 100kHz, welding inverter 100A WITH PFC MOSFET welding INVERTER 200A igbt full h bridge 25A apt50gs60brdq2g 600V50A

    welding inverter 200A

    Abstract: MOSFET welding INVERTER 200A Thunderbolt MIC4452 MOSFET welding INVERTER APT50GS60BRDQ2
    Text: APT50GS60BRDQ2 G APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BRDQ2 APT50GS60SRDQ2 100kHz, welding inverter 200A MOSFET welding INVERTER 200A Thunderbolt MIC4452 MOSFET welding INVERTER

    make full-bridge SMPS

    Abstract: Thunderbolt Thunderbolt IGBT MIC4452 MOSFET welding INVERTER
    Text: APT50GS60BR G APT50GS60SR(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BR APT50GS60SR 100kHz, O-247 make full-bridge SMPS Thunderbolt Thunderbolt IGBT MIC4452 MOSFET welding INVERTER

    Untitled

    Abstract: No abstract text available
    Text: APT50GS60BR G APT50GS60SR(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for signi cantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BR APT50GS60SR 100kHz, O-247

    Untitled

    Abstract: No abstract text available
    Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT50GS60BRDL 100kHz,

    Untitled

    Abstract: No abstract text available
    Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT50GS60BRDL 100kHz, O-247

    Untitled

    Abstract: No abstract text available
    Text: APT50GS60BRDQ2 G APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low


    Original     		PDF APT50GS60BRDQ2 APT50GS60SRDQ2 100kHz, circuit016)

    single phase igbt based WELDING inverter 200 amps

    Abstract: MOSFET welding INVERTER 200A MIC4452 600V-50A 600V50A SMPS 30v apt50gs60
    Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT50GS60BRDL 100kHz, single phase igbt based WELDING inverter 200 amps MOSFET welding INVERTER 200A MIC4452 600V-50A 600V50A SMPS 30v apt50gs60

    Untitled

    Abstract: No abstract text available
    Text: APT50GS60BRDL G 600V, 50A, VCE(ON) = 2.8V Typical *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT TO The Thunderbolt HS IGBT used in this resonant mode combi is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt® series, but trades higher VCE(ON) for significantly lower


    Original     		PDF APT50GS60BRDL 100kHz, O-247

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF 10F-A, SP6-P N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    smps 1000W

    Abstract: 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit
    Text: 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984. Our focus is on high voltage, high power and high performance applications. Our commitment is to maintain


    Original     		PDF des691 10F-A, smps 1000W 600V 300A igbt dc to dc boost converter SP6-P DRF1400 smps 500w half bridge DRF1300 1000w inverter MOSFET 1000W solar power inverter APT30GT60BRG 3000w inverter mosfet circuit

    SOT-227 lead frame

    Abstract: 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series
    Text: Power Matters High Reliability Up-Screened Plastic Products Portfolio TRANSIENT VOLTAGE SUPPRESSORS MOSFETs IGBTs RECTIFIERS About Microsemi’s High-Reliability Screened Devices Standard commercial grade semiconductor testing may not detect some types of problems such as cracked die or ionic


    Original     		PDF MIL-PRF-19500, sO-268 O-220 O-220 O-247 O-264 OT-227 SOT-227 lead frame 5kw smps full bridge S.M.P.S PLAD15KP APT10026L2FLLG 5kw SMPS full bridge Fast Recovery Rectifiers mx gp 043 SMBx6.0A DO215AA PFC 1.5kw 1.5ke series

    LE79Q2281

    Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
    Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security


    Original     		PDF