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Microchip Technology Inc APT5510JFLL MOSFET N-CH 550V 44A ISOTOP
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Microchip Technology Inc APT5518BFLLG MOSFET N-CH 550V 31A TO247-3
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DigiKey	APT5518BFLLG	Tube			30	1 - 10 - 100 $10.714 1000 $10.714 10000 $10.714	Buy Now

APT551 Datasheets (14)

Part	Manufacturer	Description	Datasheet Type	PDF
APT5510B2FLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF
APT5510JFLL	Advanced Power Technology	FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 550V 44A SOT-227	Original	PDF
APT5510JFLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF
APT5510JFLL	Microsemi	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 550V 44A SOT-227	Original	PDF
APT5510LFLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF
APT5513B2FLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF
APT5513JFLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF
APT5513LFLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF
APT5517DN	Advanced Power Technology	APT Power MOS IV Commercial and Custom DIE	Scan	PDF
APT5518BFLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF
APT5518BFLLG	Advanced Power Technology	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 550V 31A TO-247	Original	PDF
APT5518BFLLG	Microsemi	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 550V 31A TO-247	Original	PDF
APT5518SFLL	Advanced Power Technology	POWER MOS 7 R FREDFET	Original	PDF
APT551R3DN	Advanced Power Technology	APT Power MOS IV Commercial and Custom DIE	Scan	PDF

APT551 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
APT5518BFLL Abstract: APT5518SFLL Text: APT5518BFLL APT5518SFLL 550V 31A 0.180W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	APT5518BFLL APT5518SFLL O-247 O-247 APT5518BFLL APT5518SFLL	PDF
APT5513JFLL Abstract: No abstract text available Text: APT5513JFLL 550V 35A 0.130W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package	Original	APT5513JFLL OT-227 APT5513JFLL	PDF
APT5510JFLL Abstract: No abstract text available Text: APT5510JFLL 550V 44A 0.100W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package	Original	APT5510JFLL OT-227 APT5510JFLL	PDF
APT5510B2FLL Abstract: APT5510LFLL Text: APT5510B2FLL APT5510LFLL 550V 49A 0.100Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT5510B2FLL APT5510LFLL O-264 O-264 O-247 APT5510B2FLL APT5510LFLL	PDF
APT5513B2FLL Abstract: APT5513LFLL Text: APT5513B2FLL APT5513LFLL 550V 41A 0.130W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	APT5513B2FLL APT5513LFLL O-264 O-264 O-247 APT5513B2FLL APT5513LFLL	PDF
319F Abstract: APT5518BFLL APT5518SFLL Text: APT5518BFLL APT5518SFLL 550V 31A 0.180Ω R POWER MOS 7 FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT5518BFLL APT5518SFLL O-247 O-247 319F APT5518BFLL APT5518SFLL	PDF
APT5513B2FLL Abstract: APT5513LFLL Text: APT5513B2FLL APT5513LFLL 550V 41A 0.130Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT5513B2FLL APT5513LFLL O-264 O-264 O-247 APT5513B2FLL APT5513LFLL	PDF
APT5510B2FLL Abstract: APT5510LFLL Text: APT5510B2FLL APT5510LFLL 550V 49A 0.100W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON	Original	APT5510B2FLL APT5510LFLL O-264 O-264 O-247 APT5510B2FLL APT5510LFLL	PDF
APT5513JFLL Abstract: No abstract text available Text: APT5513JFLL 550V 35A 0.130Ω POWER MOS 7 R FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT5513JFLL OT-227 APT5513JFLL	PDF
APT5510JFLL Abstract: No abstract text available Text: APT5510JFLL 550V 44A 0.100Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON	Original	APT5510JFLL OT-227 APT5510JFLL	PDF
BD119 Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20	Original	AD818 AD818DIE AD820 AD821 AD820DIE O-204AA/TO-3 BD119 BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR	PDF
Untitled Abstract: No abstract text available Text: A D V A NC E D POWER TECHNOLOGY 4*JE D • □ 5 S 7 S G ci A 0000305 d v a TST n c HAVP e d POWER ; T-3P \ - \ 5 Te c h n o lo g y APT601R3BN APT551R3BN APT601R6BN APT551R6BN „ POWER MOS IV™ 600V 550V 600V 550V 7.5A 7.5A 6.5A 6.5A 1.30 £2 1.30 £2	OCR Scan	APT601R3BN APT551R3BN APT601R6BN APT551R6BN 551R3BN 601R3BN 551R6BN 601R6BN O-247AD	PDF
APT601R3/601R6KN Abstract: No abstract text available Text: ADVANCFD P O WF R TECHNOLOGY M 'lE D 0 5 S 7 ‘10I1 OOOOMfiO 0b7 H A V P A dvanced POWER 'T-3°y-l3 Te c h n o l o g y POWER MOS IV APT601R3AN APT551R3AN APT601R6AN APT551R6AN 600V 550V 600V 550V 6.5A 6.5A 6.0A 6.0A 1.30 Q 1.30 i i 1.60 Cl 1.60 & N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	APT601R3AN APT551R3AN APT601R6AN APT551R6AN 551R3AN 601R3AN 551R6AN 601R6AN PT601R3/601R6AN APT601R3/601R6KN	PDF
5514f Abstract: TO220H APT5514 TO-220H Text: ADVANCED POWER TECHNOL OGY OSE D \| QESVTQT □ODDEL.4 □ \| T-3^-lV APT6014FN 600V 43A 0.14 Q APT5514FN 550V 43A 0.14 Q POWER MQS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol VDSS *D . 'dm v gs All Ratings: Tc « 25°C unless otherwise specified.	OCR Scan	APT6014FN APT5514FN 250uA) Vol320 151ln. 5514f TO220H APT5514 TO-220H	PDF

Untitled Abstract: No abstract text available Text: ADVANCED POWER TE CH N0 L 06 Y blE J> • ADVANCED P o w er Te c h n o l o g y ?D S 0257=10=1 OOOOSOl 3b1 H J W P ® O S POWER MOS IV APT601R3GN APT551R3GN APT601R6GN APT551R6GN 600V 550V 600V 550V 5.5A 5.5A 5.0A 5.0A 1.30Q 1.30Q 1.60Q 1.60Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	APT601R3GN APT551R3GN APT601R6GN APT551R6GN S51R3GN 601R3GN 551R6GN 601R6GN O-257AA	PDF
414X Abstract: TO220H DIODE 1334 LM 2228A Text: ADVANCED POWER TECHNOLOGY OÖE D \| DESTTCn ODDDlbS Ì \| A d v a n c e d t- ^ 13 P o w er Te c h n o l o g y APT601R2AN 600V 7.0A 1.20 ß APT551R2AN 550V 7.0A 1.20 £2 POWER MOS IV N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol	OCR Scan	APT601R2AN APT551R2AN 414X TO220H DIODE 1334 LM 2228A	PDF
Untitled Abstract: No abstract text available Text: ADVANCED POWER TECHNOLOGY blE D • DE S 7‘l D t1 0GGG773 b 7 T « A V P ADVANCED P ow er T e c h n o lo g y 9 POWER MOS IV APT601R3CN 600V APT551R3CN 550V APT601R6CN 600V APT551R6CN 550V 6.5A 6.5A 5.5A 5.5A 1.30Q 1.30Q 1.60Q 1.60Q N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	0GGG773 APT601R3CN APT551R3CN APT601R6CN APT551R6CN 551R3CN 601R3CN 551R6CN 601R6CN APT601R3/601R6CN	PDF
TO220H Abstract: DIODE 1334 LM Text: ADVANCED POWER TECHNOLOGY DflE D \| 0BS7TDT 00DDa37 fl \| A d v a n c e d r 5i P o w er Te c h n o l o g y '^ APT601R2BN 600V 8.0A 1.20 Q APT551R2BN 550V 8.0A 1.20 Q POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol	OCR Scan	00DDa37 APT601R2BN APT551R2BN TO220H DIODE 1334 LM	PDF
3471A Abstract: 601R6BN APT551R Text: A dvanced P o w er TECHNOLOGY O D Ô S POWER MOS IV APT601R3BN APT551R3BN APT601R6BN APT551R6BN 600V 550V 600V 550V 7.5A 1.3012 7.5A 1.30Q 6.5A 1.60Q 6.5A 1.60Q N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified.	OCR Scan	APT601R3BN APT551R3BN APT601R6BN APT551R6BN 551R3BN 601R3BN 551R6BN 601R6BN APT601R 3/551R3/601R6/551R6BN 3471A APT551R	PDF
APT551R2BN Abstract: APT601R2BN DDD023T TO220H D 819 414x cq 538 Text: ADVANCED POW ER T E C H N O L O G Y DflE D \| 0 B S 7 T D T 0 0 D D a 3 7 fl \| A d v a n c e d r 5i '^ P o w er Te c h n o l o g y APT601R2BN 600V 8.0A 1.20 Q APT551R2BN 550V 8.0A 1.20 Q POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS	OCR Scan	APT601R2BN APT551R2BN Breakdow085 APT-102 151ln. DDD023T TO220H D 819 414x cq 538	PDF
Untitled Abstract: No abstract text available Text: 'A D VAN C ED POWER TECHNOLOGY Tfl dF J o S S T IQ I DQQDQm 7 " \ 3 ? - AS For Additional Information Contact APT Sales Representatives Or The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN	OCR Scan	APT1001R2DN APT901RDN APT8090DN APT6040DN APT5532DN APT5030DN APT4530DN APT4025DN APT10050EN APT10060EN	PDF
APT801R2DN Abstract: APT5085DN Text: ADVANCED POWER TECHNOLOGY Tfl Dlf\| D E S T E D T GODOOIE T-3^"/S P For Additional Information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RCN APT1001R2CN APT9090CN APT901RCN	OCR Scan	APT1001RCN APT1001R2CN APT9090CN APT901RCN APT8075CN APT8090CN APT6035CN APT6040CN APT5530CN APT5532CN APT801R2DN APT5085DN	PDF
apt4020an Abstract: No abstract text available Text: "SW A N CED POÌdEK “Tfl TtCH N O LO G Y DE I o d h v i ü i □u u u u o l . □ T ' M P For Additional information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RAN APT1001R2AN	OCR Scan	APT1001RAN APT1001R2AN APT9090AN APT901 APT8075AN APT8090AN APT6035AN APT6040AN APT5530AN APT5532AN apt4020an	PDF
APT40M80DN Abstract: APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257 Text: ADVANCTD POUJFR TECHNOLOGY MT E D • QSSV'IQ'l 0000343 SOT APT POWER MOS IV COMMERCIAL AND CUSTOM DIE WAVR T - 2Æ -IS ' INTRODUCTION: The purpose of this APT Note is to describe the Power MOS IV™ Transistor Die available from Advanced Power Technology.	OCR Scan	APT-105 APT-106 APT-107 APT-108 APT40M80DN APT801R2DN mos die APT-106 APT5020DN APT5025DN APT601R3DN APT5540DN APT5023 co257	PDF

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APT551 Search Results

APT551 Price and Stock

Microchip Technology Inc APT5510JFLL

Microchip Technology Inc APT5518BFLLG

APT551 Datasheets (14)

APT551 Datasheets Context Search

APT5518BFLL

APT5513JFLL

APT5510JFLL

APT5510B2FLL

APT5513B2FLL

319F

APT5513B2FLL

APT5510B2FLL

APT5513JFLL

APT5510JFLL

BD119

Untitled

APT601R3/601R6KN

5514f

Untitled

414X

Untitled

TO220H

3471A

APT551R2BN

Untitled

APT801R2DN

apt4020an

APT40M80DN