BD119
Abstract: BC148A APT1002RBNR 1000 volt npn BD109 APT5025AN APT904R2BN BD107 APT1001R3AN APT1004RBNR
Text: STI Type: AD818 Notes: Polarity: NPN Power Dissipation: .50 VCEO: 20 hFE min: 200 hFE max: 600 hFE A: .01 Matching hFE: 10 Matching VBE: 2.0 Tracking: 5.0 Case Style: TO-71 Industry Type: AD818 STI Type: AD818DIE Industry Type: AD818DIE V CEO: 25 ICBO ICEX: 20
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AD818
AD818DIE
AD820
AD821
AD820DIE
O-204AA/TO-3
BD119
BC148A
APT1002RBNR
1000 volt npn
BD109
APT5025AN
APT904R2BN
BD107
APT1001R3AN
APT1004RBNR
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TO220H
Abstract: DIODE 1334 LM
Text: ADVANCED POWER TECHNOLOGY DflE D | 0BS7TDT 00DDa37 fl | A d v a n c e d r 5i P o w er Te c h n o l o g y '^ APT601R2BN 600V 8.0A 1.20 Q APT551R2BN 550V 8.0A 1.20 Q POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol
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00DDa37
APT601R2BN
APT551R2BN
TO220H
DIODE 1334 LM
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APT551R2BN
Abstract: APT601R2BN DDD023T TO220H D 819 414x cq 538
Text: ADVANCED POW ER T E C H N O L O G Y DflE D | 0 B S 7 T D T 0 0 D D a 3 7 fl | A d v a n c e d r 5i '^ P o w er Te c h n o l o g y APT601R2BN 600V 8.0A 1.20 Q APT551R2BN 550V 8.0A 1.20 Q POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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APT601R2BN
APT551R2BN
Breakdow085
APT-102
151ln.
DDD023T
TO220H
D 819
414x
cq 538
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apt4020an
Abstract: No abstract text available
Text: "SW A N CED POÌdEK “Tfl TtCH N O LO G Y DE I o d h v i ü i □u u u u o l . □ T ' M P For Additional information Contact APT Sales Representatives O r The Factory. APT PART# UNITS Vds VOLTS Rds ON OHMS Id cont. AMPS Idm AMPS Pd WATTS APT1001RAN APT1001R2AN
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APT1001RAN
APT1001R2AN
APT9090AN
APT901
APT8075AN
APT8090AN
APT6035AN
APT6040AN
APT5530AN
APT5532AN
apt4020an
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