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    APT6010B2LL Price and Stock

    Microchip Technology Inc APT6010B2LLG

    MOSFET N-CH 600V 54A T-MAX
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    Avnet Americas APT6010B2LLG Tube 26 Weeks 20
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    Mouser Electronics APT6010B2LLG
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    Newark APT6010B2LLG Bulk 20
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    Microchip Technology Inc APT6010B2LLG
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    Onlinecomponents.com APT6010B2LLG
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    TME APT6010B2LLG 1
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    NAC APT6010B2LLG Tube 14
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    Richardson RFPD APT6010B2LLG 20
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    Master Electronics APT6010B2LLG
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    APT6010B2LL Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT6010B2LL Advanced Power Technology POWER MOS 7 600V 54A 0.100 Ohm Original PDF
    APT6010B2LL Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT6010B2LL Unknown Power MOS 7, 600V 54A, MOS-FET N-Channel enhanced Original PDF
    APT6010B2LLG Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 54A T-MAX Original PDF

    APT6010B2LL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT6010LLLG

    Abstract: APT6010B2LL APT6010LLL
    Text: Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		PDF APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* O-264 APT6010LLLG APT6010B2LL APT6010LLL

    Untitled

    Abstract: No abstract text available
    Text: APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT6010B2LL APT6010LLL O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: Ω 0.100Ω 600V 54A APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* *G POWER MOS 7 R Denotes RoHS Compliant, Pb Free Terminal Finish. MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching


    Original     		PDF APT6010B2LL APT6010LLL APT6010B2LL* APT6010LLLG* O-264 O-247

    009F

    Abstract: APT6010B2LL APT6010LLL 6710 mosfet
    Text: APT6010B2LL APT6010LLL 600V 54A 0.100Ω POWER MOS 7 R MOSFET B2LL T-MAX Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT6010B2LL APT6010LLL O-264 O-264 O-247 009F APT6010B2LL APT6010LLL 6710 mosfet

    Untitled

    Abstract: No abstract text available
    Text: APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT6010B2LL APT6010LLL O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT6010B2LL APT6010LLL O-264 O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6010B2LL APT6010LLL 600V 54A 0.100Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT6010B2LL APT6010LLL O-264 O-247

    Untitled

    Abstract: No abstract text available
    Text: APT6010B2LL APT6010LLL 600V 54A 0.100Ω R POWER MOS 7 MOSFET B2LL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT6010B2LL APT6010LLL O-264 O-247

    APT6010B2LL

    Abstract: APT6010LLL
    Text: APT6010B2LL APT6010LLL 600V 54A 0.100W B2LL POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT6010B2LL APT6010LLL O-264 O-264 O-247 APT6010B2LL APT6010LLL

    APT0201

    Abstract: APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross
    Text: Application Note APT0302 Rev. A April 4, 2003 Latest Technology PT IGBTs vs. Power MOSFETs Jonathan Dodge, P.E. Senior Applications Engineer Advanced Power Technology 405 S.W. Columbia Street Bend, OR 97702 USA Based on a paper presented at PCIM China 2003


    Original     		PDF APT0302 APT0201 APT0202 12 VOLT 10 AMP smps 12 VOLT 2 AMP smps circuit mosfet 300 volt 12 VOLT 100 AMP smps dodge high current IGBT based buck converter IGBT 400 amp IGBT cross

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF