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    APT8030 Price and Stock

    Microchip Technology Inc APT8030LVRG

    MOSFET N-CH 800V 27A TO264
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    DigiKey APT8030LVRG Tube 25
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    Avnet Americas APT8030LVRG Tube 26 Weeks 25
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    Mouser Electronics APT8030LVRG 25
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    Microchip Technology Inc APT8030LVRG
    • 1 $23.48
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    Onlinecomponents.com APT8030LVRG
    • 1 $22.79
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    TME APT8030LVRG 1
    • 1 $33.96
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    NAC APT8030LVRG Tube 16
    • 1 $21.79
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    Avnet Silica APT8030LVRG 28 Weeks 25
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    EBV Elektronik APT8030LVRG 27 Weeks 25
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    Master Electronics APT8030LVRG
    • 1 $22.79
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    Microchip Technology Inc APT8030JVFR

    MOSFET N-CH 800V 25A ISOTOP
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    DigiKey APT8030JVFR Tube 1
    • 1 $41.05
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    • 100 $33.3375
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    Avnet Americas APT8030JVFR Tube 32 Weeks 20
    • 1 $41.05
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    Mouser Electronics APT8030JVFR 71
    • 1 $41.88
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    Newark APT8030JVFR Bulk 20
    • 1 $41.05
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    Microchip Technology Inc APT8030JVFR
    • 1 $41.05
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    • 100 $35.47
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    Onlinecomponents.com APT8030JVFR
    • 1 $39.85
    • 10 $35.51
    • 100 $32.74
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    TME APT8030JVFR 1
    • 1 $59.39
    • 10 $47.23
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    NAC APT8030JVFR Tube 9
    • 1 $38.1
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    • 100 $35.09
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    Richardson RFPD APT8030JVFR 20
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    Master Electronics APT8030JVFR
    • 1 $39.85
    • 10 $35.51
    • 100 $32.74
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    Microchip Technology Inc APT8030LVFRG

    MOSFET N-CH 800V 27A TO264
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    DigiKey APT8030LVFRG Tube 25
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    Avnet Americas APT8030LVFRG Tube 32 Weeks 25
    • 1 $24
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    Mouser Electronics APT8030LVFRG 25
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    Newark APT8030LVFRG Bulk 25
    • 1 $24
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    Microchip Technology Inc APT8030LVFRG
    • 1 $24
    • 10 $24
    • 100 $20.74
    • 1000 $19.02
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    Onlinecomponents.com APT8030LVFRG
    • 1 $23.31
    • 10 $21.36
    • 100 $19.44
    • 1000 $18.86
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    TME APT8030LVFRG 1
    • 1 $34.74
    • 10 $27.63
    • 100 $27.63
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    NAC APT8030LVFRG Tube 16
    • 1 $22.29
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    Master Electronics APT8030LVFRG
    • 1 $23.31
    • 10 $21.36
    • 100 $19.44
    • 1000 $18.86
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    Microchip Technology Inc APT8030B2VRG

    Transistor MOSFET N-Channel 800V 27A 3-Pin TO-247 - Rail/Tube (Alt: APT8030B2VRG)
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    Avnet Americas APT8030B2VRG Tube 26 Weeks 30
    • 1 $23.21
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    • 100 $20.06
    • 1000 $18.86
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    Mouser Electronics APT8030B2VRG
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    Newark APT8030B2VRG Bulk 30
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    Microchip Technology Inc APT8030B2VRG
    • 1 $23.21
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    • 1000 $18.41
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    Onlinecomponents.com APT8030B2VRG
    • 1 $22.53
    • 10 $20.64
    • 100 $18.79
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    TME APT8030B2VRG 1
    • 1 $33.58
    • 10 $26.71
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    NAC APT8030B2VRG 16
    • 1 $21.54
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    • 100 $19.84
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    Master Electronics APT8030B2VRG
    • 1 $22.53
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    APT8030 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT8030 Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT8030B2VFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8030B2VFR Microsemi Power MOS V FREDFET Original PDF
    APT8030B2VR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8030DN Advanced Power Technology APT Power MOS IV Commercial and Custom DIE Scan PDF
    APT8030JN Advanced Power Technology N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFET Original PDF
    APT8030JVFR Advanced Power Technology POWER MOS V 800V 25A 0.300 Ohm Original PDF
    APT8030JVFR Microsemi Power MOS V FREDFET Original PDF
    APT8030JVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8030LVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8030LVFR Advanced Power Technology Power MOS V Original PDF
    APT8030LVFR Microsemi Power MOS V FREDFET Original PDF
    APT8030LVFRG Microchip Technology MOSFET N-CH 800V 27A TO264 Original PDF
    APT8030LVR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT8030LVRG Microchip Technology MOSFET N-CH 800V 27A TO264 Original PDF

    APT8030 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    apt8030jvfr

    Abstract: No abstract text available
    Text: APT8030JVFR 25A 0.300Ω 800V POWER MOS V S S FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8030JVFR OT-227 E145592 apt8030jvfr

    APT8030LVFR

    Abstract: No abstract text available
    Text: APT8030LVFR Ω 27A 0.300Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8030LVFR O-264 O-264 APT8030LVFR

    APT8030LVR

    Abstract: No abstract text available
    Text: APT8030LVR 800V 27A 0.300Ω POWER MOS V Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    Original     		PDF APT8030LVR O-264 O-264 APT8030LVR

    APT8030B2VFR

    Abstract: No abstract text available
    Text: APT8030B2VFR Ω 27A 0.300Ω 800V POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8030B2VFR O-247 APT8030B2VFR

    Untitled

    Abstract: No abstract text available
    Text: APT8030B2VR 27A 0.300Ω 800V POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8030B2VR O-247

    APT8030JVR

    Abstract: No abstract text available
    Text: APT8030JVR 25A 0.300Ω 800V POWER MOS V S S Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8030JVR OT-227 E145592 APT8030JVR

    Untitled

    Abstract: No abstract text available
    Text: APT8030LVFR 27A 0.300Ω 800V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT8030LVFR O-264 O-264

    Untitled

    Abstract: No abstract text available
    Text: APT8030LVR A dvanced P o w er Te c h n o l o g y 800V 27A 0.300Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT8030LVR O-264 O-264AA

    Untitled

    Abstract: No abstract text available
    Text: APT8030B2VR A dvanced P o w er Tec h n o lo g y* 800V 27A 0.300Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT8030B2VR MIL-STD-750

    Untitled

    Abstract: No abstract text available
    Text: APT8030LVFR A dvanced P o w er Te c h n o l o g y 800V POWER MOSV 27A 0.300Í1 iFREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT8030LVFR O-264 00A/HS, O-264AA

    SJ 76 A DIODE

    Abstract: No abstract text available
    Text: A D VA NC E D POWER TECHNOLOGY 4SE D • 0 557^01 O OD OS ' l b 3 GS *A V P ad va n ced ^■1 T F -P a c k C F > W ä j P O W E r n R > ? : _ ech n o lo g y APT8030CFN 800V 29.0A 0.30, P APT7530CFN 750V 29.0A 0.30 i2 POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEJS


    OCR Scan     		PDF APT8030CFN APT7530CFN MIL-STD-750 SJ 76 A DIODE

    8030JN

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y APT8030JN APT8035JN O s ISOTOP* 800V 27.0A 0.30Q 800V 25.0A 0.35Q "UL Recognized" File No. E145592 S POWER MOS IVe S IN G L E DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		PDF APT8030JN APT8035JN E145592 8030JN 8035JN OT-227

    Untitled

    Abstract: No abstract text available
    Text: O A d va n ced P o w er Te c h n o l o g y m D APT8030JN APT8035JN O s ISOTOP* 800V 800V 27.0A 0.30Q 25.0A 0.35U 5 M " U L Recognized" File No. E145592 S POWER MOS IV« SINGLE DIE ISOTOP PACKAGE N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS


    OCR Scan     		PDF APT8030JN APT8035JN E145592 8030JN 8035JN OT-227

    max7900

    Abstract: No abstract text available
    Text: APT8030LVR A dvanced po w er Te c h n o l o g y 800V 27A 0.300Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT8030LVR O-264 APT8030LVR max7900

    APT7530CFN

    Abstract: APT8030CFN
    Text: A D VA NC E D POWER TECHNOLOGY 4SE □2S7TD1 D ODDOSTb 3DS *A V P ADVANCED OD P o w e r Tec h n o lo g y a APT8030CFN 800V 29.0A 0.30f# APT7530CFN 750V 29.0A 0.30 Q Os POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFEFS MAXIMUM RATINGS


    OCR Scan     		PDF APT8030CFN APT7530CFN APT7530CFN MIL-STD-750

    Untitled

    Abstract: No abstract text available
    Text: APT8030JVFR A dvanced P o w er Te c h n o l o g y 800V POWER MOSV 25A 0.300Í1 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT8030JVFR OT-227 MIL-STD-750

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y APT8030JVFR 800V ' POWER MOS V 25A 0.300Í2 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT8030JVFR OT-227 APT8030JVFR MIL-STD-750 00A/MS, OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT8030JVR A dvanced P o w er Te c h n o l o g y 800V 25A 0.300Í1 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT8030JVR OT-227 10OA/ps) MIL-STD-750 OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT8030LVR A D V A N CED PO W ER Te c h n o l o g y 800V 27A 0.300Q POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT8030LVR O-264

    Untitled

    Abstract: No abstract text available
    Text: A d v a n ced P o w er Te c h n o l o g y APT8030JNFR ISOTOP* 800V 27A 0.30Q S U "UL Recognized" File No. E145592 S POWER MOS IVe N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: T c = 25°C unless otherwise specified.


    OCR Scan     		PDF APT8030JNFR E145592 APT8030JNFR OT-227

    Untitled

    Abstract: No abstract text available
    Text: A dvanced P ow er Te c h n o lo g y APT8030JVR 800V ' 25A 0.300Í2 POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V'“


    OCR Scan     		PDF APT8030JVR OT-227 30JVR MIL-STD-750 00nnH, OT-227

    APT8030JN

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o l o g y APT8030JNFR ISOTOP® 800V 27A 0.30Í2 5 Ù "UL Recognized" File No. E145592 S POWER MOS IV1 AVALANCHE RATED FREDFET N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER FREDFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tc = 25°C unless otherwise specified.


    OCR Scan     		PDF APT8030JNFR E145592 OT-227 APT8030JN

    Power MOSFET TT 2146

    Abstract: MOSFET TT 2146 TO220H Z59 diode 414x
    Text: ADVANCED P O WE R TECHNOLOGY OfiE D | 0257^0^ 4 | , T -2 9-I APT8030FN 800V 29A 0.30 Q APT7530FN 750V 29A 0.30 Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. Symbol Parameter


    OCR Scan     		PDF APT8030FN APT7530FN 151ln. Power MOSFET TT 2146 MOSFET TT 2146 TO220H Z59 diode 414x

    Untitled

    Abstract: No abstract text available
    Text: • R W .\A A dvan ced APT8030B2VR po w er Te c h n o l o g y " soov 27 a 0.300Q POWER MOS V‘ Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT8030B2VR O-247 APT8030B2VR