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    Power MOSFET TT 2146

    Abstract: MOSFET TT 2146 TO220H Z59 diode 414x
    Text: ADVANCED P O WE R TECHNOLOGY OfiE D | 0257^0^ 4 | , T -2 9-I APT8030FN 800V 29A 0.30 Q APT7530FN 750V 29A 0.30 Q POWER MOS IV N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS All Ratings: Tc = 25°C unless otherwise specified. Symbol Parameter


    OCR Scan     		PDF APT8030FN APT7530FN 151ln. Power MOSFET TT 2146 MOSFET TT 2146 TO220H Z59 diode 414x

    APT1003R5CN

    Abstract: APT1003R5GN APT801 APT5040CN APT801R2CN APT1002RCN APT4055GN APT5085GN APT601R2GN APT6060CN
    Text: ADVANCED P OWE R TECHNOLOGY 20E D • OaSTTDT 0000277 1 T -3 ? - / 3 H ER M ETIC IS O L A T E D CO M M ERCIA L AND H I-R E L M ILITA R Y N -CHAN NEL M O S F ET S IN P U T CAPAC­ IT A N C E C IS S PF) PO W ER D IS S I­ P A T IO N PD(MAX) (WATTS) N O TES


    OCR Scan     		PDF 02S7TDT APT1003R5GN O-257AA O-220 APT802RGN APT601R2GN APT5085GN APT4055GN APT1002RCN O-254AA APT1003R5CN APT801 APT5040CN APT801R2CN APT6060CN

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED POWER T EC HN O LO GY 2GE D • G2S7TDT 00GÜ277 T r - 3 ?~/3 HERMETIC ISOLATED COMMERCIAL AND HI-REL MILITARY N-CHANNEL MOSFETS INPUT CAPAC­ ITANCE CISS PF POW ER DISSI­ PATION PD(MAX) (WATTS) NOTES 12.0 880 125 1 5.0 20.0 880 125 1 1.20 6.5


    OCR Scan     		PDF APT4055GN APT1002RCN APT1003R5CN APT801R2CN APT802RCN APT6060CN APT601R2CN APT5040CN APT5085CN APT4030CN