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    APT80GP60J Price and Stock

    Microchip Technology Inc APT80GP60J

    IGBT MOD 600V 151A 462W ISOTOP
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    DigiKey APT80GP60J Tube 18 1
    • 1 $41.42
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    Avnet Americas APT80GP60J Tube 26 Weeks 20
    • 1 $41.42
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    Mouser Electronics APT80GP60J
    • 1 $41.42
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    Newark APT80GP60J Bulk 20
    • 1 $41.42
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    Future Electronics APT80GP60J 20
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    Microchip Technology Inc APT80GP60J
    • 1 $41.42
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    Onlinecomponents.com APT80GP60J
    • 1 -
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    TME APT80GP60J 1
    • 1 $59.85
    • 10 $47.6
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    NAC APT80GP60J Tube 9
    • 1 $38.4
    • 10 $38.4
    • 100 $35.37
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    Richardson RFPD APT80GP60J 20
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    Master Electronics APT80GP60J
    • 1 -
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    Microchip Technology Inc APT80GP60JDQ3

    IGBT 600V 151A 462W SOT227
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    DigiKey APT80GP60JDQ3 Tube 20
    • 1 -
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    • 100 $41.36
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    Avnet Americas APT80GP60JDQ3 Tube 26 Weeks 20
    • 1 $41.36
    • 10 $41.36
    • 100 $35.71
    • 1000 $33.58
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    Mouser Electronics APT80GP60JDQ3
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    Newark APT80GP60JDQ3 Bulk 20
    • 1 $41.36
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    Microchip Technology Inc APT80GP60JDQ3
    • 1 $41.36
    • 10 $41.36
    • 100 $35.71
    • 1000 $32.76
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    TME APT80GP60JDQ3 1
    • 1 $59.79
    • 10 $47.55
    • 100 $47.55
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    NAC APT80GP60JDQ3 Tube 9
    • 1 $38.36
    • 10 $38.36
    • 100 $35.33
    • 1000 $32.74
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    Richardson RFPD APT80GP60JDQ3 20
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    Avnet Silica APT80GP60JDQ3 28 Weeks 20
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    EBV Elektronik APT80GP60JDQ3 27 Weeks 20
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    Master Electronics APT80GP60JDQ3
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    APT80GP60J Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT80GP60J Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT80GP60J Microsemi Insulated Gate Bipolar Transistor-PT High Speed Original PDF
    APT80GP60JDF3 Advanced Power Technology POWER MOS 7 IGBT Original PDF
    APT80GP60JDQ3 Advanced Power Technology POWER MOS 7 IGBT Original PDF

    APT80GP60J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT80GP60J

    Abstract: No abstract text available
    Text: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT80GP60J APT80GP60J

    Ic 7442

    Abstract: APT60DQ60 APT60M75L2LL APT80GP60JDQ3
    Text: APT80GP60JDQ3 600V TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT80GP60JDQ3 E145592 Ic 7442 APT60DQ60 APT60M75L2LL APT80GP60JDQ3

    APT80GP60J

    Abstract: No abstract text available
    Text: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT80GP60J Gat87) APT80GP60J

    Untitled

    Abstract: No abstract text available
    Text: APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT80GP60JDF3

    Untitled

    Abstract: No abstract text available
    Text: APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT80GP60JDF3

    APT80GP60JD3

    Abstract: No abstract text available
    Text: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT80GP60J APT80GP60JD3

    IC 7426

    Abstract: APT80GP60J
    Text: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT80GP60J IC 7426 APT80GP60J

    Untitled

    Abstract: No abstract text available
    Text: APT80GP60JDQ3 600V TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 E E POWER MOS 7 IGBT ® The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching


    Original     		PDF APT80GP60JDQ3 E145592

    Untitled

    Abstract: No abstract text available
    Text: APT80GP60JDF3 TYPICAL PERFORMANCE CURVES APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT80GP60JDF3

    IC 7427

    Abstract: IC 7427 datasheet APT80GP60JDF3
    Text: APT80GP60JDF3 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT80GP60JDF3 IC 7427 IC 7427 datasheet APT80GP60JDF3

    Untitled

    Abstract: No abstract text available
    Text: APT80GP60J 600V POWER MOS 7 IGBT E E The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency


    Original     		PDF APT80GP60J Volta587)

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    600 volt mosfet

    Abstract: 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500
    Text: Product Profile Advanced Power Technology New Power MOS 7 IGBTs for SMPS Applications 600 Volt Size 6 - APT40GP60B2D1 Product Description Higher Threshold Voltage and Reduced “Miller Capacitance” - this provides for increased noise and spurious turn-on immunity and eliminates the


    Original     		PDF APT40GP60B2D1 O-247 APT25GP120B2D1 APT35GP120B2D2 APT45GP120B2D2 APT50GP60B2D2 APT65GP60L2D2 264-MAXTM 600 volt mosfet 1200 volt mosfet TO247 package dissipation 125OC APT13GP120B APT13GP120K APT15GP60K APT35GP120B2D2 APT40GP60B2D1 MIL-PRF19500