g.993.2
Abstract: ss smii CT-V11DC04-PM ADSL2 chipset arion g994
Text: ARION -CO VDSL2 Family of CO Chipsets ITU-T G.993.2 standard compliant with support for • 8.5/12/17.6/30MHz operation eXtremeVDSL2TM technology for long reach 100 Mbps • symmetric datarates Multi-latency operation for triple play and IPTV applications
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6/30MHz
456-pin
CT-V11DC04-PM
CT-V45AM02-PK
144-pin
CT-V31DR04-PM
CT-V41DM04-PM
g.993.2
ss smii
CT-V11DC04-PM
ADSL2 chipset
arion
g994
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VDSL2 Modem circuit diagram
Abstract: vdsl2 cpe ADSL2 Modem circuit diagram arion
Text: ARION -CPE VDSL2 Family of CPE Chipsets ITU-T G.993.2 standard compliant with support for • 8.5/12/17.6/30MHz operation eXtremeVDSL2TM technology for long reach 100 Mbps • symmetric datarates Multi-latency operation for triple play and IPTV applications
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6/30MHz
CT-C37DB01-IM
CT-C45AB01-PK
CT-C47DB01-IM
128-pin
144-pin
VDSL2 Modem circuit diagram
vdsl2 cpe
ADSL2 Modem circuit diagram
arion
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110
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MRF21090/D
MRF21090
MRF21090S
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j340 motorola make
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110
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MRF21090/D
MRF21090
MRF21090S
MRF21090/D
j340 motorola make
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vhdl code for ARINC
Abstract: TSMC Flash 40nm TSMC 40nm TSMC memory 40nm imagem DO-254 arinc 429 CRC what about 1553 bus phac
Text: Assuring safety while saving time and resources DO-254-certifiable IP cores With safety at the top of your customers’ airborne equipment requirements lists, Altera and our partners are making it easier for you to comply with industry operational-reliability standards. Our recently
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DO-254-certifiable
DO-254
DO-254-certifiable
SS-01043-2
vhdl code for ARINC
TSMC Flash 40nm
TSMC 40nm
TSMC memory 40nm
imagem
arinc 429 CRC
what about 1553 bus
phac
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arion
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Rev. 7, 12/2004 RF Power Field Effect Transistors MRF21090R3 MRF21090SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21090R3
MRF21090SR3
MRF21090SR3
arion
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j340 motorola
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21090
MRF21090S
j340 motorola
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21090S
MRF21090
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data MRF21090 Rev. 7, 12/2004 RF Power Field Effect Transistors MRF21090R3 MRF21090SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21090
MRF21090R3
MRF21090SR3
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2a258 transistor
Abstract: Fuji Electric tv schematic diagram smd transistor WB3 VHF FM PLL schematic mc145152 Motorola transistor smd marking codes MARK 176 SOT363 RF Note AR164, Motorola RF Device Data, Volume II, D tip off 0401 mosfet transistor cordless phone Transceiver IC semiconductors cross index
Text: Device Data Book WIRELESS RF PRODUCT DEVICE DATA ireless DL110/D Rev. 13 3/2002 2.5G 3G Contents at a Glance Wireless RF Product Device Data Data Sheet Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . ix End of Life Product Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . xii
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DL110/D
2a258 transistor
Fuji Electric tv schematic diagram
smd transistor WB3
VHF FM PLL schematic mc145152
Motorola transistor smd marking codes
MARK 176 SOT363 RF
Note AR164, Motorola RF Device Data, Volume II, D
tip off 0401 mosfet transistor
cordless phone Transceiver IC
semiconductors cross index
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100B100JCA500X
Abstract: 465B MRF21090 MRF21090S RF power amplifier MHz
Text: MOTOROLA Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110
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MRF21090/D
MRF21090
MRF21090S
MRF21090
100B100JCA500X
465B
MRF21090S
RF power amplifier MHz
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om5153
Abstract: 82C113 IC03b AN98007 TEA1114A tea1083
Text: APPLICATION NOTE Application of the TEA1114A Low voltage telephone transmission circuit with dialler interface and regulated strong supply AN98007 Philips Semiconductors Philips Semiconductors TEA1114A transmission circuit with dialler interface and regulated strong supply
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TEA1114A
AN98007
TEA1114A
TEA111x
om5153
82C113
IC03b
AN98007
tea1083
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100B100JCA500X
Abstract: 465B MRF21090 MRF21090R3 MRF21090SR3 arion
Text: Freescale Semiconductor Technical Data Document Number: MRF21090 Rev. 8, 5/2006 RF Power Field Effect Transistors MRF21090R3 MRF21090SR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110
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MRF21090
MRF21090R3
MRF21090SR3
MRF21090R3
100B100JCA500X
465B
MRF21090
MRF21090SR3
arion
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100B100JCA500X
Abstract: 465B MRF21090R3 MRF21090SR3 Electrolytic Capacitors 2,2
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21090/D SEMICONDUCTOR TECHNICAL DATA The RF Sub - Micron MOSFET Line MRF21090R3 MRF21090SR3 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs
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MRF21090/D
MRF21090R3
MRF21090SR3
MRF21090R3
100B100JCA500X
465B
MRF21090SR3
Electrolytic Capacitors 2,2
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Electrolytic Capacitors 22
Abstract: rm73b2b120jt
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21090 MRF21090S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21090
MRF21090S
Electrolytic Capacitors 22
rm73b2b120jt
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MOTOROLA SCR 1725
Abstract: 732 160 16 capactor for video card matsushita compressor capacitor MATSUSHITA compressor codes sansui tv diagram manhattan CATV arm cc 1800 39p MRF373 PUSH PULL IC 741 OPAMP DATASHEET MPS901
Text: DL110/D REV 12 Wireless RF, IF and Transmitter Device Data Contents at a Glance Wireless RF, IF and Transmitter Device Data Device Index Alphanumeric . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ix Chapter One Selector Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.1–1
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DL110/D
MOTOROLA SCR 1725
732 160 16 capactor for video card
matsushita compressor capacitor
MATSUSHITA compressor codes
sansui tv diagram
manhattan CATV
arm cc 1800 39p
MRF373 PUSH PULL
IC 741 OPAMP DATASHEET
MPS901
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF21090 Rev. 8, 5/2006 RF Power Field Effect Transistors MRF21090R3 MRF21090SR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF21090
MRF21090R3
MRF21090SR3
MRF21090R3
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UPS APC 800 CIRCUIT
Abstract: APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 UPS APC CIRCUIT 1550nm 5mw laser diode APC UPS repair temperature controlled fan project Fabry-Perot-Laser-Diode 1310 1550
Text: Laser Diode Products for the OEM INTRODUCTORY INFORMATiON Who we are & what we do Thank you for your interest in Power Who we are Technology, Inc. The past three decades k Manufacturer of OEM laser diode products for analytical, biomedical, & industrial applications
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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Untitled
Abstract: No abstract text available
Text: MODEL 6 7 D istributor Ite 3 / 8 " Square Multi-Turn Cerm et Trim m ing Potentiometer ELECTRICAL • 1 1 Standard Resistance Range, Ohms 10 to 2Meg Standard Resistance Tolerance ±10% <100 Ohms = ±20% Input Voltage, Maximum 200 Vdc or rms not to exceed power rating
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100mA
330mm
254mm)
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Hyde Park Electronics
Abstract: 4001 PA PIONEER
Text: /AN Ü ^ Sales Offices, Distributors & Representatives September 1991 Altera U.S. Sales Offices N O R TH ER N C A LIFORNIA C O R PO R A TE H EAD Q U A R TER S Altera Corporation 2610 Orchard Parkway San Jose, C A 95134-2020 TEL: (408) 984-2800 FAX: (408) 248-7097
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MOTOROLA ELECTROLYTIC CAPACITOR
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear am plifier applications in industrial and com m ercial FM/AM
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MRF15090/D
MOTOROLA ELECTROLYTIC CAPACITOR
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Untitled
Abstract: No abstract text available
Text: □IXYS Alabama A ll Am erican Huntsville, AL 205-837-1555 Future Electronics Huntsville, AI. 205-830-2322 N u H orizons Huntsville, AL 205-722-9330 Arizona Future Electronics Phoenix, AZ 602-968-7140 C alifornia North A ll Am erican San Jose, CA 408-441-1300
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rohm mtbf
Abstract: CAPACITOR chip murata mtbf CAPACITOR murata mtbf MOTOROLA ELECTROLYTIC CAPACITOR RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ equivalent of transistor BFT 51 2 watt rf transistor RF NPN POWER TRANSISTOR 1000 WATT BD135 transistor RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MRF15030 The RF Line NPN Silicon RF Power Transistor Motorola Preferred Device Designed for 26 volts microwave large-signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM
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MRF15030
BD135)
BD136)
GX-0300-55-22,
MRF15030
rohm mtbf
CAPACITOR chip murata mtbf
CAPACITOR murata mtbf
MOTOROLA ELECTROLYTIC CAPACITOR
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
equivalent of transistor BFT 51
2 watt rf transistor
RF NPN POWER TRANSISTOR 1000 WATT
BD135 transistor
RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ
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