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    ASI10542 Search Results

    ASI10542 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ASI10542 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

    ASI10542 Datasheets Context Search

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    ic 4001

    Abstract: ic 4001 datasheet ASI10542 ASI4001
    Text: ASI4001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4001 is Designed for General Purpose Calss C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 1.0 W / 4,000 MHz


    Original     		PDF ASI4001 ic 4001 ic 4001 datasheet ASI10542 ASI4001

    ic 4001

    Abstract: ASI10542 ASI4001
    Text: ASI4001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4001 is Designed for General Purpose Calss C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 1.0 W / 4,000 MHz


    Original     		PDF ASI4001 ASI10542 ic 4001 ASI10542 ASI4001

    ASI4001

    Abstract: ic 4001 ASI10542
    Text: ASI4001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4001 is Designed for General Purpose Calss C Power Amplifier Applications up to 4200 MHz. A 1 ØD B 2 C .060 x 45° CHAMFER 3 E 4 FEATURES: G • PG = 5 dB min. at 1.0 W / 4,000 MHz


    Original     		PDF ASI4001 ASI10542 ASI4001 ic 4001 ASI10542