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    ASI10612 Search Results

    ASI10612 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ASI10612 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

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    ASI10612

    Abstract: HF150-50F 37ad
    Text: HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50F is Designed for PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W PEP • Omnigold Metalization System FULL R


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    HF150-50F HF150-50F 112x45° ASI10612 37ad PDF

    Untitled

    Abstract: No abstract text available
    Text: HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A • PG = 14 dB min. at 150 W/30 MHz


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    HF150-50F HF150-50S 112x45Â 1I10612 PDF

    HF150-50F

    Abstract: ASI10612 HF150-50S
    Text: HF150-50F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L FLG .112x45° FEATURES: L A • PG = 14 dB min. at 150 W/30 MHz


    Original
    HF150-50F HF150-50S 112x45° ASI10612 HF150-50F ASI10612 PDF