Contextual Info: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is Designed for 12.5 V, Class C High-Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 6.0 dB at 100 W/175 MHz • Omnigold Metalization System

VHB100-12

Abstract: ASI10719
Contextual Info: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is a Class-C, 12.5 V epitaxial silicon NPN transistor. Designed primarily for VHF, FM communication, Diffused ballast resistor gives it high VSWR capability, good gain & efficiency over the 136175 MHz band.

ASI10719

Abstract: VHB100-12
Contextual Info: VHB100-12 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB100-12 is Designed for PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • • • Omnigold Metalization System FULL R D B E .725/18,42 F G MAXIMUM RATINGS 20 A IC VCBO 36 V VCEO 18 V VCES