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    ASI10727 Search Results

    ASI10727 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ASI10727 Advanced Semiconductor NPN SILICON RF POWER TRANSISTOR Original PDF

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    ASI10727

    Abstract: No abstract text available
    Text: VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: ØC 65 V VCEO 35 V VEBO 4.0 V I F E O O O O -65 C to +200 C TSTG -65 C to +150 C


    Original     		VHB40-28S VHB40-28S 112x45° ASI10727 ASI10727 PDF

    VHB40-28S

    Abstract: TRANSISTOR S 838 TRANSISTOR S 813 ic c 838 ASI10727 transistor c 838 transistor A 584 asi1072
    Text: VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB40-28S is an epitaxial plana transistor, designed for 28 V, FM, Calss C RF amplifiers utilized in base stations. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B • Common Emitter • PG = 7.0 dB at 40 W/175 MHz


    Original     		VHB40-28S VHB40-28S 112x45° TRANSISTOR S 838 TRANSISTOR S 813 ic c 838 ASI10727 transistor c 838 transistor A 584 asi1072 PDF

    transistor oc 76

    Abstract: ASI10727 VHB40-28S
    Text: VHB40-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB40-28S is Designed for .112x45° FEATURES: A B • • • Omnigold Metalization System ØC D H J MAXIMUM RATINGS G #8-32 UNC-2A IC 5.0 A VCBO 65 V VCEO VEBO PDISS


    Original     		VHB40-28S VHB40-28S 112x45° ASI10727 transistor oc 76 ASI10727 PDF