VHB50-28S
Abstract: ASI10730
Text: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is an NPN power transistor designed for 25 V Class-C ground station transmitters, it utilizes emitter ballasting and gold metalization to provide optimum VSWR capability. PACKAGE STYLE .380 4L STUD
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VHB50-28S
VHB50-28S
112x45°
ASI10730
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ASI10730
Abstract: VHB50-28S
Text: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 4L STUD The ASI VHB50-28S is Designed for .112x45° FEATURES: A B • • • Omnigold Metalization System ØC D H MAXIMUM RATINGS J G #8-32 UNC-2A IC 6.5 A VCBO 65 V VCEO 35 V VEBO
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PDF
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VHB50-28S
VHB50-28S
112x45°
ASI10730
ASI10730
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Untitled
Abstract: No abstract text available
Text: VHB50-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB50-28S is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .380 4L STUD .112x45° A • Common Emitter • PG = 6.0 dB at 50 W/175 MHz • Omnigold Metalization System
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Original
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PDF
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VHB50-28S
VHB50-28S
112x45°
ASI10730
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