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Abstract: No abstract text available
Text: VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is Designed for Class C, 28 V High Band Applications up to 175 MHz. PACKAGE STYLE .500 6L FLG FEATURES: A C • Internal Input Matching Network • PG = 9.0 dB at 125 W/175 MHz • Omnigold Metalization System
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VHB125-28
VHB125-28
ASI10731
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ASI10731
Abstract: VHB125-28
Text: VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is Designed for PACKAGE STYLE .500 6L FLG A C FEATURES: 2x ØN • • • Omnigold Metalization System FULL R D B MAXIMUM RATINGS E .725/18,42 F G M K IC 20 A VCBO 65 V VCEO 36 V
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VHB125-28
VHB125-28
ASI10731
ASI10731
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VHB125-28
Abstract: ASI10731 j105 transistor
Text: VHB125-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB125-28 is NPN RF power transistor designed primarily for VHF communications. It utilizes Emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .500 6L FLG FEATURES: C A
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VHB125-28
VHB125-28
ASI10731
j105 transistor
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