at259tr
Abstract: AT-259 AT-259TR M513 3RF22
Text: Voltage Variable Absorptive Attenuator 12 dB, DC-2.0 GHz Features • • • • • • • • AT-259 V4 Functional Schematic Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 µW Single Voltage Control: 0 to -4 Volts
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AT-259
OT-143
AT-259
OT-143
at259tr
AT-259TR
M513
3RF22
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AT-259-PIN
Abstract: No abstract text available
Text: Voltage Variable Absorptive Attenuator 12 dB, DC-2.0 GHz Features • • • • • • • • AT-259 V3 Functional Schematic Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 µW Single Voltage Control 0 to -4 Volts
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OT-143
AT-259
AT-259-PIN
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at259tr
Abstract: AT-259 AT-259RTR AT-259TR at-259 SOT143 AT-259PIN
Text: Voltage Variable Absorptive Attenuator DC - 2 GHz AT-259 V 2.00 SOT-143 Features ● ● ● ● ● ● ● ● Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 µW Single Voltage Control 0 to -4 Volts Nanosecond Switching Speed
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AT-259
OT-143
OT/143
AT-259
at259tr
AT-259RTR
AT-259TR
at-259 SOT143
AT-259PIN
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AT-259TR
Abstract: SOT143 package AT-259 M513 3RF22 AT-259 SOT143
Text: AT-259 Voltage Variable Absorptive Attenuator 12 dB, DC - 2.0 GHz Functional Schematic Features • • • • • • • • Rev. V5 Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 W Single Voltage Control: 0 to -4 Volts
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AT-259
OT-143
AT-259
OT-143
AT-259TR
SOT143 package
M513
3RF22
AT-259 SOT143
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PDF
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at259tr
Abstract: No abstract text available
Text: AT-259 Voltage Variable Absorptive Attenuator 12 dB, DC - 2.0 GHz Rev. V5 Functional Schematic Features • • • • • • • • M/A-COM Products Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 W Single Voltage Control: 0 to -4 Volts
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AT-259
OT-143
AT-259
at259tr
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smd transistor 312
Abstract: rf amplifier siemens 10 ghz SIEMENS MICROWAVE RADIO 8 GHz BGA310 BGA312 BGA318 Siemens MMIC Polytechnic diagram radar circuit SMX-1
Text: APPLICATIONS MMICs Gerhard Lohninger ● Knut Brenndörfer Jakob Huber ● Thomas Pollakowski Monolithic broadband amplifiers go mobile In wireless communications, there is a distinct trend toward more compact and lighter terminals. This means that the components used
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MA4T636533
Abstract: transistor sot-23 2613 MA4T6365
Text: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and
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MA4T6365
MA4T6365
OT-143
MA4T636539
MA4T636533
transistor sot-23 2613
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C3140
Abstract: C31408 c3140 datasheet ADM811 ADM812 mbg* sot143
Text: a Microprocessors Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811/MAX812 Specified Over Temperature Low Power Consumption 5 A Typ Precision Voltage Monitor: +3 V, +3.3 V, +5 V Options Reset Assertion Down to 1 V VCC
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OT-143
ADM811/ADM812
MAX811/MAX812
ADM811)
ADM812)
ADM811/ADM812
240ms
ADM811LART
ADM811MART
C3140
C31408
c3140 datasheet
ADM811
ADM812
mbg* sot143
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TO-253-AA
Abstract: adm811
Text: a FEATURES Superior Upgrade for MAX811 Specified Over Temperature Low Power Consumption 5 mA Typ Precision Voltage Monitor: 3 V, 3.3 V, 5 V Options Reset Assertion Down to 1 V VCC 140 ms Min Power-On Reset Logic Low RESET Output Built-In Manual Reset Microprocessor Supervisory
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MAX811
OT-143
ADM811
ADM811
OT-23]
O-253AA
TO-253-AA
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PDF
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adm811
Abstract: No abstract text available
Text: a Microprocessors Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811/MAX812 Specified Over Temperature Low Power Consumption 5 A Typ Precision Voltage Monitor: +3 V, +3.3 V, +5 V Options Reset Assertion Down to 1 V VCC
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Original
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OT-143
ADM811/ADM812
MAX811/MAX812
ADM811)
ADM812)
ADM811/ADM812
OT-223
OT-23,
adm811
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PDF
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adm811
Abstract: No abstract text available
Text: a Microprocessors Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811/MAX812 Specified Over Temperature Low Power Consumption 5 A Typ Precision Voltage Monitor: +3 V, +3.3 V, +5 V Options Reset Assertion Down to 1 V VCC
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Original
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OT-143
ADM811/ADM812
MAX811/MAX812
ADM811)
ADM812)
ADM811/ADM812
OT-223
OT-23,
adm811
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PDF
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Untitled
Abstract: No abstract text available
Text: Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811 Specified over Temperature Low Power Consumption 5 mA Typ Precision Voltage Monitor: 2.5 V, 3 V, 3.3 V, 5 V Options Reset Assertion down to 1 V VCC 140 ms Min Power-On Reset
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Original
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OT-143
ADM811/ADM812
MAX811
ADM811/ADM812
ADM811/ADM81.
C00092â
ADM812
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PDF
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ADM811
Abstract: ADM812 TO-253D C0009
Text: Microprocessor Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811/MAX812 Specified over Temperature Low Power Consumption 5 A Typ Precision Voltage Monitor: 2.5 V, 3 V, 3.3 V, 5 V Options Reset Assertion Down to 1 V VCC
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Original
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OT-143
ADM811/ADM812
MAX811/MAX812
ADM811)
ADM812)
ADM811/ADM812
5/02--Data
ADM812
ADM811
ADM812
TO-253D
C0009
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PDF
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adm811
Abstract: No abstract text available
Text: a Microprocessors Supervisory Circuit in 4-Lead SOT-143 ADM811/ADM812 FEATURES Superior Upgrade for MAX811/MAX812 Specified Over Temperature Low Power Consumption 5 A Typ Precision Voltage Monitor: +3 V, +3.3 V, +5 V Options Reset Assertion Down to 1 V VCC
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Original
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OT-143
ADM811/ADM812
MAX811/MAX812
ADM811)
ADM812)
ADM811/ADM812
OT-223
OT-23,
adm811
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PDF
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Untitled
Abstract: No abstract text available
Text: Voltage Variable Absorptive Attenuator DC-2 GHz AT-259 SOT-143 Features Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 |iW Single Voltage Control 0 to -4 Volts Nanosecond Switching Speed Tem perature Range: -40 'C to + 85"C
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AT-259
OT-143
AT-259
OT143
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PDF
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Untitled
Abstract: No abstract text available
Text: Voltage Variable Absorptive Attenuator DC-2 GHz SOT-143 Features • • • • • • • • AT-259 .0 8 3 - .10 4 _ 2 -1 0 - 2 - 6 4 _ _ Attenuation: 12 dB at 1 GHz Low Intermodulation Products Low DC Power Consumption: 50 \x\N Single Voltage Control 0 to -4 Volts
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OT143
AT-259
OT-143
AT-259
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PDF
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MA4T64500
Abstract: 4558 MA4T64535 557 sot143 micro X
Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV
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4T64500
MA4T64533
MA4T64535
OT-23
MA4T64539
OT-143
MA4T645XX
OT-143)
MA4T64500
4558
MA4T64535
557 sot143
micro X
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PDF
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MA4T64500
Abstract: No abstract text available
Text: M an A M P com pany Silicon Bipolar High fT Low Noise Microwave Transistors MA4T645 V3.00 Case Styles Features • • • • • • fT to 9 GHz Low Noise Figure High A ssociated Gain Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels
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MA4T645
MA4T645
MA4T64539
OT-143
MA4T64500
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PDF
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Untitled
Abstract: No abstract text available
Text: LLS3T31 DOlSbll S DEVELOPMENT DATA BCV64 This data sheet contains advance information and specifications are subject to change without notice. N ANER PHILIPS/DISCRETE DbE D SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications.
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LLS3T31
BCV64
OT-143
BCV63.
bbS3T31
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PDF
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BCV63
Abstract: BCV64 small signal transistor SCHMITT-TRIGGER application BCV64A 700 v power transistor
Text: ^53^31 D E V E L O P M E N T D ATA DOlSbll 5 BCV64 T h is d a ta sheet c o n ta in s advance in fo rm a tio n a n d sp e c ific a tio n s are su b ject to c hange w it h o u t notice. N AMER PH IL IP S/ DISCR ETE ObE D SILICO N PLANAR TRANSISTOR Double P-N-P transistor in a plastic SO T-143 envelope. Intended for Schmitt-trigger applications.
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BCV64
OT-143
BCV63.
0015L13
BCV63
BCV64
small signal transistor
SCHMITT-TRIGGER application
BCV64A
700 v power transistor
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PDF
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MA4T636500
Abstract: MA4T6365
Text: M an A M P com pany Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • D esigned for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and
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MA4T6365
MA4T6365
OT-143
MA4T636539
MA4T636500
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PDF
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26-13 transistor sot-23
Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic
Text: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages
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MA4T6365XX
MA4T636535
MA4T636539
OT-143
26-13 transistor sot-23
micro X
Silicon Bipolar Transistor Micro-X Ceramic
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PDF
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571LT1
Abstract: MBR571LT1 HW-XX sot-23 MARKING GU
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MPS571 M M BR571LT1 M RF5711LT1 The RF Line NPN Silicon High-Frequency TVansistors . . . designed fo r low noise, w ide dynam ic range front-end am plifiers and low-noise VCO’s. Available in a surface-mountable plastic package, as w ell as
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-226AA
MMBR571LT1)
MRF5711LT1)
A/500
SS-12
IS22I
571LT1
MBR571LT1
HW-XX
sot-23 MARKING GU
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PDF
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t636
Abstract: 557 sot143 T636 A S 223 858 015 636
Text: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and
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OCR Scan
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MA4T6365
MA4T6365
OT-143
MA4T636539
t636
557 sot143
T636 A S
223 858 015 636
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PDF
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