Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D LLS3T31 ooman MAINTENANCE TYPE 4 LAE4000Q for new design use LAE4001R r-i)-a3 M IC R O W A V E LIN EA R PO W ER T R A N S IS T O R NPN silicon transistor intended for use in military and professional applications. It operates in c.w.
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LLS3T31
LAE4000Q
LAE4001R)
OT-100
OT-100.
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Untitled
Abstract: No abstract text available
Text: LLS3T31 DOlSbll S DEVELOPMENT DATA BCV64 This data sheet contains advance information and specifications are subject to change without notice. N ANER PHILIPS/DISCRETE DbE D SILICON PLANAR TRANSISTOR Double P-N-P transistor in a plastic SOT-143 envelope. Intended for Schmitt-trigger applications.
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LLS3T31
BCV64
OT-143
BCV63.
bbS3T31
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Untitled
Abstract: No abstract text available
Text: OLE D N AMER PHILIPS/DISCRETE D E V E L O P M E N T DATA' • LLS3T31 0D132T2 5 U ■ T h ii data sheet contains advance Information and specif Icatlons are subject to change without notice. BGY93A BGY93B BGY93C , y d v _ _ _ _ T''7H~Oc '- 0 K
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LLS3T31
0D132T2
BGY93A
BGY93B
BGY93C
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Untitled
Abstract: No abstract text available
Text: . N AflER PHIL IPS /DI SCRE TE 2SE D ! , LLS3T31 0032415 7 • DEVELOPMENT DATA BYR28 SERIES This data sheet contains advance information and specifications are subject to change without notice. , [ T -G Z -iy ULTRA FAST RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward
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LLS3T31
BYR28
002242H
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BB135
Abstract: No abstract text available
Text: LLS3T31 Philips Semiconductors DD2b3Tl HM7 MB A P X Preliminary specification BB135 UHF variable capacitance diode N AMER PHILIPS/DISCRETE b'lE D Q U IC K R E F E R E N C E DATA DESCRIPTION The BB135 is a silicon, double-implanted variable capacitance diode in planar
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LLS3T31
BB135
BB135
OD323.
bb53531
D02b401
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Untitled
Abstract: No abstract text available
Text: TDD D N AMER PHILIPS/DISCRETE 9 0D 1 0 1 5 8 MAINTENANCE TYPES D I L,b53T31 0010156 fi 1“ ' 3 3 - 0 7 BY261 SERIES SILICON BRIDGE RECTIFIERS Ready for use full-wave bridge rectifiers in a plastic encapsulation. The bridges are intended for use in equipment supplied from a.c. w ith r.m.s. voltages up to 420 V and
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b53T31
BY261
100oC
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b b S a ^ l ODllEb=] 0 ObE D BYV21 SERIES T-03-19 J SCHOTTKY-BARRIER RECTIFIER DIODES High-efficiency schottky-barrier rectifier diodes in DO—4 metal envelopes, featuring low forward voltage drop, low capacitance, absence of stored charge and high temperature stability. They are
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BYV21
T-03-19
BYV21-40A,
LLS3T31
bb53T31
001137b
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Untitled
Abstract: No abstract text available
Text: bb53c!31 0015^62 b BCX51 BCX52 BCX53 QbE D N AMER PHILIPS/DISCRETE 7V r- 2^-23 SILICON PLANAR EPITAXIAL TRANSISTORS Medium power p-n-p transistors in a miniature plastic envelope intended for applications in thick and thin-film circuits. These transistors are intended for general purposes as well as for use in driver stages
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bb53c
BCX51
BCX52
BCX53
BCX54,
BCX55
BCX56
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Untitled
Abstract: No abstract text available
Text: N AUER PHI L I P S / D I S CR E T E □ bE D bb53T31 DD1SE17 1 RZ1214B65Y T - 3 3 - 5 ~ PULSED M IC R O W A VE POWER TRANSISTOR N:P-N silicon microwave power transistor for use in a common-base, class-B wideband amplifier and operating under pulsed conditions in L-band radar applications.
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bb53T31
DD1SE17
RZ1214B65Y
T-33-IS
7Z94222
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/D ISCR ETE • E5E D bbS^Bl 0QEE3DS □ ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. Their electrical isolation makes them ideal for
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BY229F
BY229Fâ
LLS3T31
bt53131
QD2531S
002531b
T-03-17
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BUZ357
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE OLE D PowerM OS transistor • b b S a ^ l 0014343 T B U Z 357 T~ ~ 3^ - 13- May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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LLS3T31
BUZ357
T-39-13
D014fl4c
BUZ357
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Untitled
Abstract: No abstract text available
Text: 1^53=131 QDia?t7 7 • DEVELOPMENT DATA II This data sheet contains advance information and specifications are subject to change without notice. BUS131 SERIES N AUER P H I L I P S /DISCRETE T 25E D - 3 3 - / 3 NPN SILICON POWER TRANSISTORS High-voltage, glass-passivated power transistors in TO-3 envelope, intended for use in very fast
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BUS131
BUS131H
BUS131
bb53131
T-33-13
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BYX10G
Abstract: 0032T
Text: BYX10G _ RECTIFIER DIODE D ouble-diffused glass-passivated rec tifie r diode in h e rm etically sealed axial-leaded glass envelope, intended fo r use in general industrial applications w here a high repetitive peak reverse voltage is required.
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BYX10G
OD-57.
bbS3T31
0032T40
BYX10G
0032T
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SOT-90B
Abstract: CNY17-1 17F-2 17-F1 Y17F CNY17 CNY17F CNY17F-1 17F-3 17-F4
Text: P h ilip s Sem icon du ctor« P rodu ct specification Optocouplers CNY17-1 to 4/CNY17F-1 to 4 APPRO VALS FEATURES • Fast switching S TA N D A R D • Low saturation voltage UL note 1 • High maximum output voltage VDE (note 1) approved in accordance with V D E 0883/6.80
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CNY17-1
Y17F-1
CNY17F
OT90B
CNY17F-1
CNY17
bbS3R31
4/CNY17F-1
SOT-90B
17F-2
17-F1
Y17F
17F-3
17-F4
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D PowerMOS transistor • b b S a ^ l 0014736 S ■ BUZ348 r - 3 ^ - i 3 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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BUZ348
TQ218AA;
T-39-13
LLS3T31
OD14743
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bTE D bb53T31 DQE7T15 Til APX BSX32 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N silicon planar epitaxial transistor in a TO-39 encapsulation. The BSX32 is designed fo r use in high current switching applications. QUICK REFERENCE DATA
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bb53T31
DQE7T15
BSX32
BSX32
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bot64
Abstract: BDT65A BDT64 BDT65C BDT64B BDT65B DT6-4 64a diode BOT65
Text: BDT64; 64A BDT64B; 64C SILICON DARLINGTON POWER TRANSISTORS P N P epitaxial base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. T O -220 plastic envelope. N PN complements are BOT65,
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BDT64;
BDT64B;
O-220
BOT65,
BDT65A,
BDT65B
BDT65C.
BDT64
bot64
BDT65A
BDT65C
BDT64B
DT6-4
64a diode
BOT65
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optocoupler 4N25 VDE
Abstract: a4n25 4N25 A4N25A 4N25A 4N26 4N27 4N28 sot90b optocoupler 4n25
Text: 4N25 4N25A 4N26 4N27 4N28 TO Æ J OPTOCOUPLERS V- T h is p ro d u c t range is o n e o f th e indu strial standards ap plied in th e m arket. T he current transfer ratio, iso la tio n voltage and lo w saturation voltage c o m p ly w ith th e sp e cifica tio n s o f th e m ain part o f the
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4N25A
E90700
0110b
7Z91427
D035b23
optocoupler 4N25 VDE
a4n25
4N25
A4N25A
4N25A
4N26
4N27
4N28
sot90b
optocoupler 4n25
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Untitled
Abstract: No abstract text available
Text: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.
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BUZ45A_
bb53T31
0014bS7
T-39-13
T-39-13
D014bST
BUZ45A
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buz36
Abstract: No abstract text available
Text: PowerMOS transistor_ BUZ36 N AMER PHILIPS/DISCRETE DbE D • t.bS3T31 0014bab E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies
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BUZ36
bS3T31
0014bab
BUZ36_
0014b3D
T-39-13
0014b31
buz36
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BGY45B
Abstract: No abstract text available
Text: N AtlER PH IL I P S / D I S C R E T E i 860 8 1034 ObFT • bbS3^3l" O O l ^ s " T DT ‘-7 * y ^ o f-C > / BGY45B _/ V V.H.F. BROADBAND POWER MODULE V.H.F. broadband power amplifier module prim arily designed for mobile communications equipment,
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BGY45B
bbS3131
7Z94276
BGY45B
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE HSE D bb53T31 QDEiaib METAL OXIDE VARISTORS _ i z . ~ i Zinc Oxide Voltage Dependent Resistor U.L. File #E98144 VDE File #14480-4790-1001/A1F DESCRIPTION GENERAL V oltage D(ependent) R(esistor)-varistors-have
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bb53T31
E98144
14480-4790-1001/A1F
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TAG 9109
Abstract: tag 8538 tag 8904 BT 1840 PA Q 371 Transistor TE 555-1 bt 1490 transistor FC54M Transistor MJE 5331 TAG 9031 mje 5331
Text: • Philips Semiconductors bbS3T31 □ □ 2 I4Ö41 N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES ■ APX 350 Product specification b7E — : BFG67; BFG67/X; S ; BFG67R; BFG67/XR PINNING PIN DESCRIPTION • High power gain • Low noise figure
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bb53T31
BFG67
OT143
BFG67)
BFG67/X)
BFG67R
BFG67/XR)
BFG67
Co600
TAG 9109
tag 8538
tag 8904
BT 1840 PA
Q 371 Transistor TE 555-1
bt 1490 transistor
FC54M
Transistor MJE 5331
TAG 9031
mje 5331
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m2303
Abstract: 8y22 BY229F IEC134 rivet SSC 08382
Text: N A M ER PHILIPS/DISCRETE ESE D • btSBTBl 0QS23DS D ■ BY229F SERIES T -0 3 -1 7 FAST SOFT-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, double-diffused rectifier diodes in full-pack plastic envelopes, featuring fast reverse recovery times and non-snap-off characteristics. Their electrical isolation makes them ideal for
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0GS23DS
BY229F
T-03-17
BY229Fâ
m2303
17-with
m2303
8y22
IEC134
rivet SSC
08382
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