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    BUZ36_ Price and Stock

    Infineon Technologies AG BUZ36

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    Bristol Electronics BUZ36 4
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    Siemens BUZ36

    Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
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    ComSIT USA BUZ36 20
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    BUZ36_ Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BUZ36 Philips Semiconductors PowerMOS Transistor Original PDF
    BUZ36 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    BUZ36 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ36 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BUZ36 Unknown FET Data Book Scan PDF
    BUZ36 Semelab MOS Power Transistor Scan PDF
    BUZ36 Siemens SIPMOS Power Transistor Scan PDF
    BUZ36 Siemens Power Transistors Scan PDF
    BUZ360 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ360 Siemens main ratings Scan PDF
    BUZ361 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BUZ361 Siemens main ratings Scan PDF
    BUZ361 Siemens Power Transistors Scan PDF

    BUZ36_ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    buz36

    Abstract: No abstract text available
    Text: PowerMOS transistor_ BUZ36 N AMER PHILIPS/DISCRETE DbE D • t.bS3T31 0014bab E ■ July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUZ36 bS3T31 0014bab BUZ36_ 0014b3D T-39-13 0014b31 buz36

    BUZ36

    Abstract: T-39
    Text: PowerMOS transistor_ BUZ36 N AMER PHILIPS/DISCRETE — ~ — GLE D • _ ^53=131 GOlMbEb E ■ 13 r-a'ì - July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. This device is intended for use in


    OCR Scan     		PDF BUZ36 bbS3131 0Q14b35 T-39-13 BUZ36 T-39