Untitled
Abstract: No abstract text available
Text: PO40/44A _ OPTOCOUPLEh Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.
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PO40/44A
OT90B
PO40/44A
P040A,
P042A,
P043A,
P044A
satur10'
bbS3T31
0D35S50
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bt 44a
Abstract: 12945 WE VQE 11 E WE VQE 23 F WE VQE 24 E P041 P043A TI210 331 Optocoupler
Text: P040/44A _ OPTOCOUPLEh I » Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life operation.
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P040/44A
OT90B
P040/44A
P040A,
P042A,
P043A,
P044A
LL53T31
bt 44a
12945
WE VQE 11 E
WE VQE 23 F
WE VQE 24 E
P041
P043A
TI210
331 Optocoupler
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Transistor 3TY
Abstract: No abstract text available
Text: I I ÛU AL ITY T E C H N O L O G I E S CORP S7E D • 7 4 b b ô 5 1 0 G G4 41 7 212 « f l T Y U N u a t» CNG36 GaAIAs OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared emitting GaAIAs diode and a silicon npn phototransistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life
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CNG36
OT90B
OT212.
74bbflSl
0DD4fl03
MSA048-2
Transistor 3TY
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Untitled
Abstract: No abstract text available
Text: CNG35 CNG36 JV GaAIAs OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor w ith accessible base in a SOT90B envelope, designed for low input current and long life operation. The application o f an IR emitting diode, based on a special GaAIAs intrinsic process results in a
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CNG35
CNG36
OT90B
E90700
003S234
CNG36.
CIMG36.
003SSTS
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HD H101
Abstract: CNG36 CNG35 SOT-90B SOT90B
Text: CNG35 CNG36 T O GaAIAs OPTOCOUPLERS O ptica lly coupled isolators consisting o f an infrared em itting GaAIAs diode and a silicon npn photo transistor w ith accessible base in a SOT90B envelope, designed fo r low input current and long life operation. The application o f an IR em ittin g diode, based on a special GaAIAs intrinsic process results in a
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CNG35
CNG36
OT90B
E90700
CNG36.
7Z24Q93
CNG35.
HD H101
CNG36
CNG35
SOT-90B
SOT90B
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bt 44a
Abstract: Transistor 2TY npn photo transistor P042A
Text: P040/44A ÛUALITY TECHNOLOGIES CORP S7E D • 74bbflSl GDD4b74 AMT ■t3TY T O A OPTOCOUPLEh I ■ r Optically coupled isolator consisting of an infrared emitting GaAIAs diode and a silicon npn photo transistor with accessible base in a SOT90B envelope. Designed for low input current and long life
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P040/44A
74bbflSl
GDD4b74
OT90B
P040/44A
P040A,
P042A,
P043A,
P044A
74bbfl51
bt 44a
Transistor 2TY
npn photo transistor
P042A
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314 optocoupler
Abstract: 14CNP SOT-90B 453 optocoupler sot90b optocoupler 312 317 optocoupler transistor b73
Text: Philips Semiconductors Product specification 7 Optocoupler 2UALITY T E C H N O L O G I E S OF4114 CORP 57E D 74t.bfiSl G D O H b b b 773 » A T Y FEATURES • High current transfer ratio and low saturation voltage, making the device suitable for use with
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OF4114
OT90B
CNY17-3,
14CNP.
MSB051
OF4114
OT212.
74bbflSl
0DD4fl03
314 optocoupler
14CNP
SOT-90B
453 optocoupler
sot90b
optocoupler 312
317 optocoupler
transistor b73
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SOT-90B
Abstract: No abstract text available
Text: SL5500 SL5501 SL5511 y v OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable fo r T TL integrated circuits. Features • High output/input DC current transfer ratio
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SL5500
SL5501
SL5511
bbS3T31
00355b?
SOT-90B
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optocoupler 357
Abstract: No abstract text available
Text: SL5504 J V O PTO C O U PLER Optically coupled isolator consisting of an infrared emitting GaAs diode and a high voltage silicon npn phototransistor w ith accessible base. Plastic envelope. Suitable for TTL integrated circuits Features • High output/input DC current transfer ratio
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SL5504
bbS3T31
QD35S64
optocoupler 357
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Untitled
Abstract: No abstract text available
Text: MCT26 *1 OPTOCOUPLER A Optocoupler in a Dl L plastic envelope. The M CT26 comprises an infrared GaAs diode and a npn silicon phototransistor. UL — Covered under U L component recognition F IL E E 90700 V D E — Approved according to V D E 0883/6.80 Reference voltage V D E 0 1 10b Tab 4 : A C 380 V/DC 450 V — isolation group C
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MCT26
804/VDE
86/HD195
0D35S2A
3S530
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Untitled
Abstract: No abstract text available
Text: H11B1 H11B2 H11B3 O P T O C O U P L E R S Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. Features • Very high output/input DC current transfer ratio • Isolation voltage o f 2 kV RMS and 2.82 kV DC
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H11B1
H11B2
H11B3
0110b
bbS3T31
D03SSD4
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Untitled
Abstract: No abstract text available
Text: 4N38 4N38A J V ^ /^ E \ O PTO CO U PLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and an npn silicon photo transistor. They are suitable fo r use w ith TTL integrated circuits. Features • High maximum output voltage • Fast switching and low saturation voltage
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4N38A
E90700
0110b
bbS3T31
0Q35b41
0035b42
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L1102
Abstract: "sot-90B" sot90b LF 428 4N38 4N38A IEC134 OPTOCOUPLER dc SOT-90B
Text: 4N38 4N38A » OPTOCOUPLERS 1— \ O ptically coupled isolators consisting o f an infrared em itting G aAs diode and an npn silicon photo transistor. They are suitable fo r use w ith T T L integrated circuits. Features • High maximum o u tp u t voltage
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4N38A
E90700
0110b
0035b4E
L1102
"sot-90B"
sot90b
LF 428
4N38
4N38A
IEC134
OPTOCOUPLER dc
SOT-90B
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MCA231
Abstract: MCA265 MCA230 MCA255 OPTOCOUPLER dc 231 transistor opto isolators
Text: MCA230 MCA231 MCA255 OPTOCOUPLERS O ptically coupled isolators consisting o f an infrared em itting GaAs diode and an npn silicon photo-D arlington transistor. Features o f these products: • • • • High o u tp u t/in p u t DC current transfer ratio
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MCA230
MCA231
MCA255
MCA255)
E90700
0110b
804/VDE
86/HD
LLS3T31
003551b
MCA231
MCA265
MCA230
MCA255
OPTOCOUPLER dc
231 transistor
opto isolators
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Untitled
Abstract: No abstract text available
Text: SL5500 SL5501 SL5511 , ÛUALITY TECHNOLOGIES CORP 57E D • 74bbô51 0GD4bûT 270 «fiTY OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn phototransistor with accessible base. Plastic envelopes. Suitable for T T L integrated circuits.
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SL5500
SL5501
SL5511
OT212.
MSA048-2
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification 7- H t - r j Optocouplers ÛUA L IT Y T E C H N O L O G I E S CNY17-1 to 4/CNY17F-1 to 4 CORP S7E D 74bbasi OOQMblM • Fast switching STANDARD REFERENCE • Low saturation voltage UL note 1 • High maximum output voltage
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CNY17-1
4/CNY17F-1
74bbasi
0110b
57804/VDE
86/HD
OT212.
SA048-2
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Untitled
Abstract: No abstract text available
Text: • bh53131 005CH15 h M N ANER PHILIPS/DISCRETE CNX35 CNX36 CNX39 S5E D T - 4 1 -0 3 OPTOCOUPLERS Optically coupled isolators consisting of an infrared emitting GaAs diode and a silicon npn photo transistor with accessible base. Plastic envelopes. Suitable for TTL integrated circuits.
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bh53131
005CH15
CNX35
CNX36
CNX39
CNX35U,
CNX36U
CNX39U.
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Untitled
Abstract: No abstract text available
Text: H 11B 255 _ » A O P T O C O U P L E R Optically coupled isolator consisting o f an infrared emitting GaAs diode and an npn silicon photoDarlington transistor. features • High maximum output voltage e Very high output/input DC current transfer ratio
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0110b
00355CH
DD3SS11
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CBC 184 transistor
Abstract: CNX35U Transistor 2TY CBC 184 c transistor
Text: CNX35U CNX36U PM VO O I I Û U A L IT Y T E C H N O L O G I E S CORP S7E D 7 4 b b 6 5 1 G G G 4 53 4 EfiS • ■ 3T Y — % OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a silicon npn phototransistor w ith accessible base. Plastic envelopes. Suitable fo r TTL integrated circuits.
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CNX35U
CNX36U
E90700
0110b
74bbfl51
OT212.
74bbflSl
0DD4fl03
CBC 184 transistor
CNX35U
Transistor 2TY
CBC 184 c transistor
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SOT-90B
Abstract: optocouplers 4n35 OPTOCOUPLER dc 4N35 4n35 optocoupler 4N36 SOT90B isolator IC 4N35 optocoupler 4N37
Text: 4N35 4N36 4N37 T O OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a npn silicon photo transistor. They are suitable fo r use w ith TTL integrated circuits. Features • Fast switching speeds • Low saturation voltage
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E90700
0110b
57804/VDE
7Z94427A
S3T31
003Sb3b
SOT-90B
optocouplers 4n35
OPTOCOUPLER dc
4N35
4n35 optocoupler
4N36
SOT90B
isolator IC 4N35
optocoupler
4N37
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CNX48
Abstract: transistor 115 25e diode h5e CNX48U SOT-90B 4t85 CNX48 U
Text: I 1 N AUER PHILIPS/DISCRETE SSE D • bbS3T31 GOSOTÖB 1 ■ CNX48 OPTOCOUPLER Opto-isalator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor with accessible base. Plastic 6-lead dual-in line DI L envelope. Features
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bbS3T31
CNX48
CNX48U.
7Z88208
CNX48
transistor 115 25e
diode h5e
CNX48U
SOT-90B
4t85
CNX48 U
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212 optocoupler
Abstract: Optocoupler le 25 CNX48U
Text: CNX48U OPTOCOUPLER W /& O pto-isolator comprising an infrared em itting GaAs diode and a silicon npn Darlington phototransistor w ith accessible base. Plastic 6-lead dual-in line D IL envelope. Features • V ery high o u tp u t/in p u t DC current transfer ratio
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CNX48U
E90700
0110b
804/VDE
86/HD
7Z88208
G035442
212 optocoupler
Optocoupler le 25
CNX48U
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Untitled
Abstract: No abstract text available
Text: 4N29 4N30 4N31 4N32 4N33 OPTOCOUPLER Opto-isolator comprising an infrared emitting GaAs diode and a silicon npn Darlington phototransistor w ith accessible base. Plastic 6-lead dual-in-line DIL envelope. Features • Very high output/input DC current transfer ratio
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E90700
AC/450
57804/VDE
86/HD
7Z88310
003Sb30
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Untitled
Abstract: No abstract text available
Text: [[ N AMER PHILIPS/DISCRETE 25E D bb53T31 0021025 0 • CNX71 T - 4 - I - ^ 3 H IG H -V O L T A G E O P T O C O U P L E R The CNX71 is an optocoupler consisting of an infrared emitting GaAs diode and a silicon npn phototransistor in a dual-in-line DIL plastic envelope. The base is not connected.
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bb53T31
CNX71
CNX71
E90700
AC/450
DQ31Q3M
T-41-83
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