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    AT004N Search Results

    AT004N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AT004N3-11 Alpha Industries GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC-4 GHz Original PDF
    AT004N3-11LF Skyworks Solutions Communications: GaAs 30dB IC Voltage Variable Dual Control Attenuator DC-4GHz Original PDF

    AT004N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AT004N3-11

    Abstract: No abstract text available
    Text: GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC–4 GHz AT004N3-11 Features -11 • Dual Control Voltages ORIENTATION MARK ■ Low Insertion Loss ■ 8 Lead Hermetic Surface Mount Package ■ Capable of Meeting MIL-STD Requirements5 0.150 3.81 mm


    Original
    AT004N3-11 AT004N3-11 3/99A PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs 30 dB MMIC FET Voltage Variable Dual Control Attenuator DC-6 GHz EDlAipfia AT004N3-11, AT006N3-00, AT006N3-10, AT006N3-01 Features 30 dB Range Low D.C. Drain A T004N 3-11 Fast Switching A T006N 3-01 Low Insertion Loss 1.2 dB Low Phase Shift Bridged “T” Design


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    AT004N3-11, AT006N3-00, AT006N3-10, AT006N3-01 MIL-STD-883 AT006N3-01 T004N T006N PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs 30 dB IC Voltage Variable Dual Control Attenuator DC-4 GHz ESAlpha AT004N3-11 -11 F eat ur e s • Dual Control Voltages ORIENTATION , M A R K - -0 .1 8 0 4.57 mm SQ . MAX. ■ Low Insertion Loss ■ 8 Lead Hermetic Surface Mount Package ■ Capable of Meeting MIL-STD


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    AT004N3-11 AT004N3-11 3/99A PDF

    Untitled

    Abstract: No abstract text available
    Text: Section 2 RF GaAs MMIC Products in Metal Packages Numerical Index Part Number Page Part Number Page Part Number Page AD004T2-00 2-44 AK006R2-01 2-30 AS006M1-01 2-8 AD004T2-11 2-44 AK006R2-10 2-30 AS006M1-10 2-a AE002M2-29 2-74 AK006R2-00 2-28 AS006M2-00 2-16


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    AD004T2-00 AD004T2-11 AE002M2-29 AE002M4-05 AH002R2-11 AK002D2-11 AK002D4-11 AK002D4-31 AK002M4-00 AK002M4-31 PDF

    DSB3665-02

    Abstract: No abstract text available
    Text: High Power Multi-Throw UHF PIN Switches EHAlpha DSB3665-01, DSB3665-02, DSB3667-01 Features Hermetically Sealed Chips Stripline and T O -8 Can Packages SP2T and SP3T Designs 100 W att CW Operation Maximum Ratings 10 to 1000 MHz Operating Temperature: -6 5 °C to +150°C


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    DSB3665-01, DSB3665-02, DSB3667-01 DSB3665 DSB3667 ch8-31 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 DSB3665-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC Power Amplifier [jHAIph in S O I C 16 Plastic Package AP103-64 Features • Saturated Power Up To 31 dBm ■ 6 Volt Operation ■ Efficiency Up To 65% ■ Idle Current Typically Less Than 80 mA ■ On Chip Bias Network Converts - 4 Volt Supplies


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    AP103-64 SOIC16 AP103-64 ce8-31 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC 2 Watt High Linearity ËBÀlph Cellular SPDT Switch DC-2000 MHz A S 1 16-59 Features • High Linearity 50 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Extremely Low Cost ■ Requires Fixed Positive Bias ■


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    DC-2000 of-31 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: •ísSKS GaAs MMIC Two Watt High î ? ‘ 1 _. Linearity Cellular SPDT Switch EBAIp'hi AS103-59 Features ■ High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10V Control


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    AS103-59 AS103-59 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: ËSAlph 37-40 GHz GaAs MMIC Amplifier AA038P1-00 Chip Layout Features • Broad Coverage of K a-B and ■ 14 dB Small Signal Gain ■ 18 dBm Output Power at P 1dB at 38 G H z ■ Dual Drain Bias ■ 0.25 urn Ti/Pt/Au Gates ■ Passivated Surface Electrical Specifications at 25°C


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    AA038P1-00 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11 AT002N5-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC SPDT FET Switch EBAlph Reflective DC-6 GHz AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 Features • Broadband D C -6 GHz ■ Low Loss ■ Reflective Open ■ Low D.C. Power Consumption ■ Excellent Intermodulation ProductVTemp. Stability ■


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    AS006R2-01, AS006R2-10, AS004R2-08, AS004R2-11 AS004R2â AS006R2â AS006R2-01) AK006L1-01 AS004M2-11 AT002N5-00 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs SPDT FET MMIC 4 Watt TR Switch ESAlph in 8 Lead SOIC Package DC-2.5 GHz AH002R2-12 Features • TR Switch ■ Low Insertion Loss < 0.5 dB @ 900 MHz ■ Designed for Cellular Radio Applications ■ Medium Power Handling Capability, 1 dB Compressed at 5W, 900 MHz, -1 0 V Bias


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    AH002R2-12 maxi-31 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11 PDF

    SMS1526-10

    Abstract: No abstract text available
    Text: Schottky Mixer and Detector Diodes in EEAlpha Surface Mount Plastic Packages SMS Series Features For High Volume Commercial Applications SOT 23 SOD 323 S m all Surface M ount Packages SOT 143 Low C onversion Loss T ight P aram eter D istribution High Signal Sensitivity


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    AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11 AT002N5-10 AK006M1-01 SMS1526-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC Two Watt High Linearity EH Alpha Cellular SPDT Switch in SS0P8 Package AS358-62 Features • High Linearity 55 dBm IP3 @ 900 MHz ■ Low Loss (0.35 dB @ 900 MHz) ■ Low DC Power Consumption ■ Both Positive and/or Negative 3 to 10 V Control Voltages


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    AS358-62 AK006L1-01 AS004M2-11 AT002N5-00 AK006L1-10 AS004R2-08 AT002N5-01 AK006M1-00 AS004R2-11 AT002N5-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs MMIC SPDT FET Switch Non-Reflective DC-6 GHz • EBAlph . . . . - . * »■ ■ ■ ■V.s-l AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 Features ■ Broadband DC-6 GHz ■ Non-Reflective ■ Low DC Power Consumption ■ Excellent Intermodulation ProductsYTemp. Stability


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    AS006M2-01, AS006M2-10, AS004M2-08, AS004M2-11 AS006M2-10 MIL-STD-883 AK006L1-01 AT002N5-00 PDF

    AF002C1-32

    Abstract: AF002C1-39 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443
    Text: GaAs MMIC Control FET in SOT 143 03A lp ft DC-2.5 GHz AF002C1-32 Features • Low Cost ■ Small SOT 143 Package ■ Series or Shunt Configuration ■ Low DC Current Drain ■ Ideal Switch Building Block Absolute Maximum Ratings Description RF Input Power:


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    AF002C1-32 AF002C1-32 AF002C1-39 AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 E 212 fet AS006M2-10 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 S443 PDF

    AS117-45

    Abstract: AD004T2-00 AK006R2-01
    Text: GaAs MMIC FET10 Watt Diversity Switch In SOW 16 Package DC-2.0 GHz • " " ■ ■ ■ « ■ ■ ■ 03 Alpha t v ■,. : v r - r ^ - .n I ^w A S 11 7 -4 5 Features High Power P - 1 dB > 10 Watts Integrated Decoder Chip that Provides Two Line Voltage Control


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    FET10 AS117-45 DC-2000 DC-1000 04M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AD004T2-00 AK006R2-01 PDF

    pin diode limiter

    Abstract: MMIC limiter AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10
    Text: gQAIpl Switch and Limiter Modules CSB7003-02 Features Stripline Mount Shunt Mounted Limiter in 50£2 Line Switch and Limiter Functions through 18 GHz Description This series of modules consists of a single PIN diode shunt mounted in a 50£2 hermetically sealed package.


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    CSB7003-02 CSB7003-02. AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 pin diode limiter MMIC limiter AD004T2-00 AD004T2-11 AE002M2-29 AK006R2-00 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 PDF

    AFM02N5-55

    Abstract: AD004T2-00 AD004T2-11 AFM02N5-56 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 S443 92260
    Text: Low Noise Packaged GaAs MESFET Alph AFM02N5-55, AFM02N5-56 Drain Features Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz ■ 0.25 ,um Ti/Pt/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package


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    AFM02N5-55, AFM02N5-56 AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AFM02N5-55 AD004T2-00 AD004T2-11 AFM02N5-56 AK006R2-01 AK006R2-10 AS006M1-01 AS006M1-10 S443 92260 PDF

    AD004T2-00

    Abstract: CVE7800-06 CVE7800-12 CVE7800-18 CVE7800-30 CVE7800-36 CVE7800-42 varactor high power 226 varactor
    Text: GaAs Abrupt Varactor Diodes CVE7800 Series Features • Low Series Resistance - High Q ■ Low Capacitance Values for Applications at Millimeter W ave Frequencies ■ Available in Ceramic Packages with Low Parasitics and Also in Die Form Maximum Ratings Description


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    CVE7800 AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AK006L1-00 AD004T2-00 CVE7800-06 CVE7800-12 CVE7800-18 CVE7800-30 CVE7800-36 CVE7800-42 varactor high power 226 varactor PDF

    AFP02N2-55

    Abstract: AFP02N2 pt 8799 AFP02N2-56 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01
    Text: EfiAlph Low Noise Packaged PHEMT AFP02N2-55, AFP02N2-56 Drain Features • Low Noise Figure, 0.75 dB at 12 GHz ■ High Associated Gain, 9.5 dB at 12 GHz ■ High MAG, > 10.0 dB at 12 GHz ■ 0.25 urn Ti/Pt/Au gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package


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    AFP02N2-55, AFP02N2-56 AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AFP02N2-55 AFP02N2 pt 8799 AFP02N2-56 AD004T2-00 AD004T2-11 AK006R2-01 AS006M1-01 PDF

    DMK2307-000

    Abstract: DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226
    Text: EBAIphi GaAs Schottky Barrier Mixer Diodes CMK and DMK Series Features Low N oise Figure Low Series Resistance Excellent Cutoff, Low Junction Capacitance Ideal for Image Enhancem ent Mixers Passivated Planar Construction for Reliability Description A lpha’s series of gallium arsenide Schottky barrier


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    AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 AK006L1-00 AS004M2-08 DMK2307-000 DMK2784-000 DMK2784 DMK2605-000 DMK50 mixer diodes DMK2606-000 DMK2791-000 DMK2860-000 diode 226 PDF

    c1842

    Abstract: SMC HF 270
    Text: Ceramic Packaged Surface Mount PIN Diodes SMC1800 Series Features • Industry Standard Outline ■ Hermetically Sealed Ceramic Package ■ Non-Rollable Surface Mount Design ■ Full Face PIN diode Chip Bond ■ For High Performance Switches and Attenuators


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    SMC1800 soR2-11 AS006L1-00 AS006L1-- AS006L1 AS006L2-00 AS006L2-01 AS006M1-00 AS006M1-01 AS006M1-10 c1842 SMC HF 270 PDF

    SPD3465

    Abstract: SPD3510-XX SPD3510
    Text: BÌAlphi Sampling Phase Detectors SPD3465, SPD3471, SPD3472 Series Features • Low Cost Design for Phase Lock ■ Rugged, Modular, Hybrid Construction ■ Phase Locks VCO and DROs up to 20 GHz ■ Wide Frequency Range ■ Available for Oscillator Signal Levels from


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    SPD3465, SPD3471, SPD3472 rAS004M2-11 AS004R2-08 AS004R2-11 AS006L1-00 AS006L1-- AS006L2-00 SPD3465 SPD3510-XX SPD3510 PDF

    AT006N3-93

    Abstract: No abstract text available
    Text: Switches «xg. 2 a O 1 Frequency GHz Description Insertion Loss (dB) Isolation (dB) 1 dB Comp. (dBm) Typ. Package Chip w O 30 Part Number S’S? SP4T — Non-Reflective Switches DC-2.0 High Isolation 1.2-1.6 58-48 24 0.02-2.0 High Isolation w/ CMOS Driver 2 Line Control


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    AS002M4-00 AE002M4-05 AE002M4-78 AE002M6-77 AV141-321 QFN-12 AT002D8-31 AT002D4-31 AT002D6-31 AA115-321 AT006N3-93 PDF