AT260 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39.5 dBm at 5.9 GHz to 6.4 GHz • High gain - G 1dB = 8.0 dB at 5.9 GHz to 6.4 GHz • Broad band internally m atched • H erm etically sealed package

50920-1

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 6.4 GHz to 7.2 GHz • High gain - G 1dB = 6.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 5.3 GHz to 5.9 GHz • High gain - G 1dB = 7.5 dB at 5.3 GHz to 5.9 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 dB c at Po = 28.5 dBm, - Single carrier level • High power - P idB = 39 dBm at 6.4 GHz to 7.2 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8836B Power GaAs FETs Chip Form Features • High power - P idB = 29.5 dBm at f = 8 GHz • High gain - G 1dB = 7.5 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: RECTANGULAR SOLID STATE LAMPS OPTOELECTRONICS HIGH EFFICIENCY RED YELLOW HIGH EFFICIENCY GREEN HLMP-0300/1 HLMP'0400/1 HLMP-0503/4 DESCRIPTION * SO .018 0.45 + N O M IN AL-2 PLACES I .315 (6.00) .290 (7.37) .100(2.54) .090 (2.29) .100(2.54) NOMIN AL

X band 5-bit attenuator

Contextual Info: A fe c Digital Attenuator, 31 dB, 5 Bit DC-2 GHz 93 AT-260 SSOP-20 Features • Attenuation 1 dB Steps to 31 dB • Temperature Stability ± 0.15 dB from -40°C to +85°C Typical • Ultra Low DC Power Consumption • Low Intermodulation Products, IP3: 39 dBm

S8837A

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8837A Power GaAs FETs Chip Form Features • High power - P idB = 32 dBm at f = 8 GHz • High gain - G 1dB = 7 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

AT-260

Abstract: AT-260TR M513 SSOP-20
Contextual Info: AT-260 Digital Attenuator, 31 dB, 5-Bit DC - 2.0 GHz Functional Schematic Features • • • • • • Rev. V5 1-dB Attenuation Steps to 31 dB Ultra Low DC Power Consumption Low Intermodulation Products: IP3 = 50 dBm SSOP-20 Plastic Package Tape and Reel Packaging Available

c1066a

Contextual Info: LîX J CLEAR LENST-1V4 SOLID STATE LAMPS OPTOELECTRONICS ORANGE YELLOW HIGH EFFICIENCY GREEN HIGH EFFICIENCY RED MV5152 MV5352 MV5452 MV5752 MV6152 MV6352 MV64520 MV64521 MV6752 DESCRIPTION PACKAGE DIMENSIONS MV5X52— LEAD CUT CATHODE LjONG MV6X52X— LEAD CUT ANODE LONG

I.MX31

Contextual Info: Freescale Semiconductor Chip Errata Document Number: MCIMX31CE Rev. 5.7, 1/2013 MCIMX31 and MCIMX31L Chip Errata M91E, Rev. 2.0 and Rev. 2.0.1 This document contains errata information for: MCIMX31 and MCIMX31L i.MX31 and i.MX31L for the silicon masks 2.0 and 2.0.1, shown in Table 1.

SANYO Amorton

Abstract: 1.5V solar garden light solar cell Amorphous AM-5610 solar cells circuit diagram solar street light design AT7S64 solar traffic light design AM-1417 solar cell
Contextual Info: Amorphous Silicon Solar Cells / Amorphous Photosensors 2007-11 The Concept Behind Solar Cell Power Generation Electric current Light Transparent electrode + + + + + + + + + + + + + + i + +- + + + + - n - - - - - Metal - - - - - - Electron electrode + Positive hole

CR584

Abstract: SYS68K ARM11 3L38W 2L38W IMX* Sony IPS1301BS hard reset arm11 TLSbo91748 MCIMX31L
Contextual Info: Freescale Semiconductor Chip Errata MCIMX31 and MCIMX31L M91E, Rev. 2.0 and Rev. 2.0.1 This document contains errata information for: MCIMX31 and MCIMX31L i.MX31 and i.MX31L for the silicon masks 2.0 and 2.0.1, shown in Table 1. Table 1. Silicon Revision

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM4951-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 4.9 GHz to 5.10 GHz • High gain - G 1dB = 9.5 dB at 4.9 GHz to 5.1 GHz • Broad band internally m atched • H erm etically sealed package

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package

S3V 09

Abstract: S3V 03
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET S8835 Power GaAs FETs Packaged Features • High power - P idB = 24 dBm at f = 8 GHz • High gain - G idB = 8 dB at f = 8 GHz • Suitable for C-Band am plifier • Ion implantation RF Performance Specifications (Ta = 25° C)

AT2601

Abstract: 6v dc to dc mobile charger circuit Portable tv Circuit Diagram schematics AAT2601 LDO51 micro usb cell phone charger AAT2601178
Contextual Info: PRODUCT DATASHEET AT2601178 Total Power Solution for Portable Applications General Description Features The AT2601 is a member of AnalogicTech’s Total Power Management ICTM TPMICTM product family. It contains a single-cell Lithium Ion/Polymer battery charger, a fully

smr-3822

Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
Contextual Info: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM

5154A

Abstract: 6754A 5354A MV5453
Contextual Info: EO DIFFUSED T-13/ SOLID STATE LAMPS OPTOELECTRONICS ORANGE YELLO W HIGH EFFICIENCY GREEN HIGH EFFICIENCY RED MV5153/4A MV5353/4A MV5453/4A MV5753/4A MV6153/4A MV6353/4A MV64530/1 MV6454J MV6753/4A DESCRIPTION PACKAGE DIMENSIONS These solid state indicators offer a variety of diffused lens

Contextual Info: E T-1 SOLID STATE LAMPS Q OPTOELECTRONICS YELLOW MV5374C STANDARD RED MV5074C HIGH EFFICIENCY GREEN MV5474C STANDARD RED MV5075C HIGH EFFICIENCY RED MV5774C DESCRIPTION These solid state indicators offer a variety of color selection. The High Efficiency Red, Green and Yellow

AT7S64

Abstract: AM-1513 AM-5907 AM-1815 AM-1417 FL200Lux 7D08 AM-5610 AM-1437 AM-7A03
Contextual Info: アモルファスSi太陽電池 アモルファス光センサ 2007-11 発電原理 太陽電池の発電原理は半導体の光起電力効果を利用したものです。 光 半導体に適当なエネルギーの強さを持った光が入射すると、光と半

Contextual Info: T-1 SOLID STATE LAMPS E Q OPTOELECTRONICS YELLOW MV5374C STANDARD RED MV5074C HIGH EFFICIENCY GREEN MV5474C STANDARD RED MV5075C HIGH EFFICIENCY RED MV5774C DESCRIPTION These solid state indicators offer a variety of color selection. The High Efficiency Red, Green and Yellow

7760R

Abstract: LTS7760R LTS7751R LTS-7751R LTS7651HR LTS-7751 LTS3731E 7756r 7751R TE 7751
Contextual Info: TAIWAN LITON ELECTRONIC m /s p ô t\a E4E D LTS- 7000 SERIES ÔÔ3SS 47 OQGOt.42 h 3730 \ 0.43" SIN GLE DIGIT NUMERIC DISPLAYS SPECIALIST FEATURES • 0.43 INCH 10.9mm D IG IT H EIGHT. • CONTINUOUS UNIFORM SEGMENTS. • CHOICE OF S IX BRIG H T COLORS-RED/BRIGHT