ATF-45100
Abstract: ATF45100-GP6 at8151
Text: HEWLETT-PACKARD/ CflPNTS m blE ]> HEW LETT PACKARD • M447SÖ4 G O Q ^ S M Features • • • 3T7 ■ H P A ATF-45100 AT-8151 2-12 GHz Medium Power Gallium Arsenide FET Chip Outline High Output Power: 29.0 dBm typical Pi <mat 4 GHz High Gain at 1 dB Compression:
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M447S
ATF-45100
AT-8151)
ATF-45100
ATF45100-GP6
at8151
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ATF-45100
Abstract: ATF 45100 ATF45100 ATF45100-GP6
Text: HEULETT-PACKARD/ Wam H E W L E T T mLfim P A C K A R D CMPNTS b lE D • M 4 4 7 S S 4 □ 0 0 cl cî S 4 ATF-45100 AT-8151 2-12 GHz Medium Power Gallium Arsenide FET Features 3T7 ■ Chip Outline • High Output Power: 29.0 dBm typical Pi <ra at 4 GHz
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M447SÃ
ATF-45100
AT-8151)
ATF-45100
passivat-127
ATF 45100
ATF45100
ATF45100-GP6
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HRMA-0470B
Abstract: Semicon volume 1 HPMA-2085 HP 33002A AVANTEK ATF26884 SJ 2036 HPMA-0470TXV HPMA-0485 HPMA-0370 DIODE GOC 61
Text: Whal HEWLETT \HrJk PACKARD Communications Components Designer’s Catalog, GaAs and Silicon Products A Brief Sketch Hewlett-Packard is one of the world’s leading designers and manufacturers of RF and microwave semiconductors, optoelectronic, and fiber optic
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E-28230
S-164
CH-8902
HRMA-0470B
Semicon volume 1
HPMA-2085
HP 33002A
AVANTEK ATF26884
SJ 2036
HPMA-0470TXV
HPMA-0485
HPMA-0370
DIODE GOC 61
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ATF-45100
Abstract: AVANTEK transistor
Text: A V A N T E K INC SDE D • ^ A V A N-mTm E K ^ llHllfab G O O b S T l 7 ATF-45100 AT-8151 2.-|2 GHz Medium Power Gallium Arsenide FET T-3l-2.£ Avantek Chip Outline Features • • • High Output Power: 29.0 dBm typical Pi <ib at 4 GHz High Gain at 1 dB Compression:
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ATF-45100
AT-8151)
ATF-45100
AVANTEK transistor
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ATF-45100
Abstract: No abstract text available
Text: ATF-45100 AT-8151 2-12 GHz Medium Power Gallium Arsenide FET Whol H EW LETT V!kM PACK ARD Features • • • Chip Outline High Output Power: 29.0 dBm typical Pi dB at 4 GHz High Gain at 1 dB Compression: 11.0 dB typical Gi dB at 4 GHz High Power Efficiency:
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ATF-45100
AT-8151)
ATF-45100
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