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    ATC100A130 Search Results

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    ATC100A130 Price and Stock

    American Technical Ceramics Corp ATC100A130JP150X

    Capacitor, Porcelain, 13pf, 150V, .5+pf, 5±%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A130JP150X 1,530
    • 1 $1.5525
    • 10 $1.5525
    • 100 $1.5525
    • 1000 $0.7142
    • 10000 $0.6521
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    American Technical Ceramics Corp ATC100A130FW150XT

    CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.000013 uF, SURFACE MOUNT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A130FW150XT 481
    • 1 $3.6
    • 10 $3.6
    • 100 $3.6
    • 1000 $1.44
    • 10000 $1.44
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    American Technical Ceramics Corp ATC100A130JW150X

    CAPACITOR, CERAMIC, MULTILAYER, 150 V, 0.000013 UF, SURFACE MOUNT, 0505
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A130JW150X 27
    • 1 $1.5
    • 10 $1.38
    • 100 $1.2
    • 1000 $1.2
    • 10000 $1.2
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    American Technical Ceramics Corp ATC100A130JP50

    100A130JP50
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A130JP50 23
    • 1 $1.5
    • 10 $1.38
    • 100 $1.2
    • 1000 $1.2
    • 10000 $1.2
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    American Technical Ceramics Corp ATC100A130FPX100SP

    100A130FPX100SP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC100A130FPX100SP 11
    • 1 $4.95
    • 10 $2.475
    • 100 $2.475
    • 1000 $2.475
    • 10000 $2.475
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    ATC100A130 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6A MRFG35002N6AT1

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6A MRFG35002N6AT1 A113 A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 0, 12/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6A MRFG35002N6AT1 A113 A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1

    ATC100A101

    Abstract: murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6A MRFG35002N6AT1 ATC100A101 murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6A MRFG35002N6AT1