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    MRFG35002N6AT1 Search Results

    MRFG35002N6AT1 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRFG35002N6AT1 Freescale Semiconductor 1.5W 6V GAAS FET PLD1.5 Original PDF

    MRFG35002N6AT1 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6A MRFG35002N6AT1

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6A MRFG35002N6AT1 A113 A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1

    GT1040

    Abstract: 466 907 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
    Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data MRFG35002N6T1 replaced by MRFG35002N6AT1. Gallium Arsenide PHEMT MRFG35002N6T1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6 MRFG35002N6T1 MRFG35002N6AT1. MRFG35002N6T1 GT1040 466 907 A113 AN1955 MRFG35002N6AT1

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 0, 12/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6A MRFG35002N6AT1 A113 A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1

    ATC100A101

    Abstract: murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6A MRFG35002N6AT1 ATC100A101 murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6A MRFG35002N6AT1

    power transistors table

    Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
    Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,


    Original
    PDF

    GT1040

    Abstract: 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1
    Text: Document Number: MRFG35002N6 Rev. 2, 1/2008 Freescale Semiconductor Technical Data Gallium Arsenide PHEMT MRFG35002N6T1 RF Power Field Effect Transistor LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original
    PDF MRFG35002N6 MRFG35002N6T1 GT1040 100A101 A113 AN1955 MRFG35002N6AT1 MRFG35002N6T1