rf35
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7235NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base
|
Original
|
MRF8S7235N
MRF8S7235NR3
rf35
|
PDF
|
NIPPON CAPACITORS
Abstract: MRF6S19200H MRF6S19200HSR3 A114 A115 AN1955 C101 JESD22 MRF6S19200HR3 ATC100B100CT500XT
Text: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to
|
Original
|
MRF6S19200H
MRF6S19200HR3
MRF6S19200HSR3
MRF6S19200HR3
NIPPON CAPACITORS
MRF6S19200H
MRF6S19200HSR3
A114
A115
AN1955
C101
JESD22
ATC100B100CT500XT
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8S7235N Rev. 0, 6/2012 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF8S7235NR3 Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base
|
Original
|
MRF8S7235N
MRF8S7235NR3
|
PDF
|
0119A
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF6S19200H Rev. 0, 3/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19200HR3 MRF6S19200HSR3 Designed for CDMA base station applications with frequencies from 1930 to
|
Original
|
MRF6S19200H
MRF6S19200HR3
MRF6S19200HSR3
MRF6S19200HR3
0119A
|
PDF
|