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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 4, 2/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large-signal output applications at 2450 MHz. Devices	Original	MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 MRF6S24140HR3	PDF
465B Abstract: A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 GRM55DR61H106KA88B C1825C103J1RAC Text: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 0, 3/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz. Device	Original	MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 MRF6S24140HR3 465B A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HSR3 GRM55DR61H106KA88B C1825C103J1RAC	PDF
GRM55DR61H106KA88B Abstract: AN1955 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 3, 3/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large- signal output applications at 2450 MHz.	Original	MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 MRF6S24140HR3 GRM55DR61H106KA88B AN1955 MRF6S24140H MRF6S24140HSR3	PDF
GRM55DR61H106KA88B Abstract: No abstract text available Text: Document Number: MHT1000H Rev. 0, 5/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET MHT1000HR5 RF power transistor suitable for industrial heating applications operating at 2450 MHz. Device is capable of both CW and pulse operation.	Original	MHT1000H MHT1000HR5 GRM55DR61H106KA88B	PDF
AN1955 Abstract: GRM55DR61H106KA88B kemet c chip data sheet Resistor mttf 465B A114 A115 JESD22 MRF6S24140H MRF6S24140HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 2, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz.	Original	MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 MRF6S24140HR3 AN1955 GRM55DR61H106KA88B kemet c chip data sheet Resistor mttf 465B A114 A115 JESD22 MRF6S24140H	PDF
GRM55DR61H106KA88B Abstract: freescale gps ATC600B5R6BT500XT AN1955 C1825C103J1RAC 145170 Text: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 4, 2/2012 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large-signal output applications at 2450 MHz. Devices	Original	MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 MRF6S24140HR3 GRM55DR61H106KA88B freescale gps ATC600B5R6BT500XT AN1955 C1825C103J1RAC 145170	PDF
465B Abstract: A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF6S24140H Rev. 1, 4/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S24140HR3 MRF6S24140HSR3 Designed primarily for large - signal output applications at 2450 MHz.	Original	MRF6S24140H MRF6S24140HR3 MRF6S24140HSR3 MRF6S24140HR3 465B A114 A115 AN1955 JESD22 MRF6S24140H MRF6S24140HSR3	PDF