ATC600F0R1BT250XT
Abstract: No abstract text available
Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
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ATC600F0R1BT250XT
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MRF8P20140WH/HS
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20140WH
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ATC600S10
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth
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ATC600S10
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MRF8P182
Abstract: ATC600F0R1BT250XT atc600f150jt250xt
Text: Document Number: MRF8P18265H Rev. 1, 2/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for
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MRF8P18265H
MRF8P18mployees,
MRF8P18265HR6
MRF8P18265HSR6
MRF8P18265H
MRF8P182
ATC600F0R1BT250XT
atc600f150jt250xt
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MRF8P20140WHS
Abstract: mrf8p20140 J473 MRF8P20140W
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base
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MRF8P20140WH
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mrf8p20140
J473
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ATC600S2R7BT250XT
Abstract: ATC600S0R5BT250XT ATC600S1R0BT250XT MRF8P20165WHS ATC600S1R0BT ATC600S0R6BT250XT ATC600S100JT250XT ATC600F0R1BT250XT ATC600S1R5BT250XT
Text: Freescale Semiconductor Technical Data Document Number: MRF8P20165WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8P20165WHR3 MRF8P20165WHSR3 Designed for base station applications with wide instantaneous bandwidth
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ATC600S2R7BT250XT
ATC600S0R5BT250XT
ATC600S1R0BT250XT
MRF8P20165WHS
ATC600S1R0BT
ATC600S0R6BT250XT
ATC600S100JT250XT
ATC600F0R1BT250XT
ATC600S1R5BT250XT
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D1880
Abstract: AN1955 41* RF tuner
Text: Freescale Semiconductor Technical Data Document Number: MRF8P18265H Rev. 0, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA and multicarrier base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical
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MRF8P18265H
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D1880
AN1955
41* RF tuner
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