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Kyocera AVX Components 600F1R2BT250XT Silicon RF Capacitors / Thin Film 250volts 1.2pF NP0
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	600F1R2BT250XT		4,847			1 $1.39 10 $0.739 100 $0.668 1000 $0.508 10000 $0.386	Buy Now

ATC600F1R2BT250XT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
MRF8P20140WH/HS Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WH/HS	PDF
ON SEMICONDUCTOR J122 Abstract: J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122 Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical	Original	MRF8HP21130H MRF8HP2113ficers, MRF8HP21130HR3 MRF8HP21130HSR3 MRF8HP21130H ON SEMICONDUCTOR J122 J730 512 j122 MHz-2170 EMVY500ADA221MJA0G ATC600F1R2BT250XT 8383d 146 J122	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 1, 11/2013 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3	PDF
ATC600F100JT250XT Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 ATC600F100JT250XT	PDF
j295 Abstract: SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606 Text: Document Number: MD7IC2012N Rev. 0, 4/2013 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifiers The MD7IC2012N wideband integrated circuit is designed with on−chip matching that makes it usable from 1805 to 2170 MHz. This multi−stage	Original	MD7IC2012N MD7IC2012NR1 MD7IC2012GNR1 j295 SEMICONDUCTOR J598 J585 843 j122 GRM31B j338 j0606	PDF
transistor j307 Abstract: j352 sk063 Text: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to	Original	AFT18H357--24S AFT18H357-24SR6 transistor j307 j352 sk063	PDF
MRF8P20140WHS Abstract: mrf8p20140 J473 MRF8P20140W Text: Freescale Semiconductor Technical Data Document Number: MRF8P20140WH Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	MRF8P20140WH MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WHS mrf8p20140 J473 MRF8P20140W	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRFE6S8046N MRFE6S8046NR1 MRFE6S8046GNR1 MRFE6S8046NR1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MMRF2006N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier MMRF2006NT1 The MMRF2006N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage	Original	MMRF2006N MMRF2006NT1 MMRF2006N	PDF
*J532 Abstract: C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529 Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3 *J532 C5750X7R1H106KT j692 C5750KF1H226ZT SEMICONDUCTOR J598 ATC600F100JT250XT MRF8P20100H SMT3725ALNF ATC600F1R2 J529	PDF
MRF8P20100HR3 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20100H Rev. 0, 4/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz and GSM EDGE base station applications with frequencies from	Original	MRF8P20100H MRF8P20100HR3 MRF8P20100HSR3	PDF
MRFE6S9046GN Abstract: ATC600F1R2BT250XT j162 438 j A113 A114 A115 AN1955 C101 JESD22 Text: Freescale Semiconductor ‘Technical Data Document Number: MRFE6S8046N Rev. 0, 5/2009 RF Power Field Effect Transistors MRFE6S8046NR1 MRFE6S8046GNR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with	Original	MRFE6S8046N MRFE6S8046NR1 MRFE6S8046GNR1 MRFE6S8046NR1 MRFE6S9046GN ATC600F1R2BT250XT j162 438 j A113 A114 A115 AN1955 C101 JESD22	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MW7IC2020N Rev. 1, 12/2013 RF LDMOS Wideband Integrated Power Amplifier MW7IC2020NT1 The MW7IC2020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage	Original	MW7IC2020N MW7IC2020NT1 MW7IC2020N 211ver	PDF
ATC600F330JT250XT Abstract: J706 W5043 J-104 J420 Text: Freescale Semiconductor Technical Data Document Number: MW7IC2020N Rev. 0, 1/2012 RF LDMOS Wideband Integrated Power Amplifier MW7IC2020NT1 The MW7IC2020N wideband integrated circuit is designed with on-chip matching that makes it usable from 1805 to 2170 MHz. This multi-stage	Original	MW7IC2020N MW7IC2020NT1 ATC600F330JT250XT J706 W5043 J-104 J420	PDF

Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8HP21130H Rev. 0, 4/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical	Original	MRF8HP21130H 14mployees, MRF8HP21130HR3 MRF8HP21130HSR3	PDF