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Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical
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PDF
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MRF8P23080H
MRF8P23080HR3
MRF8P23080HSR3
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GSC356-HYB2500
Abstract: ATC600F1R0JT250XT atc600f100jt250xt J930 MRF8P23080HR3 ATC600F0R8JT250XT
Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 1, 11/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2620 MHz. Can be used in Class AB and Class C for all typical
|
Original
|
PDF
|
MRF8P23080H
MRF8P23080HR3
MRF8P23080HSR3
GSC356-HYB2500
ATC600F1R0JT250XT
atc600f100jt250xt
J930
ATC600F0R8JT250XT
|
GSC356-HYB2500
Abstract: GRM21BR71H105KA12 ATC600F100JT250XT MRF8P23080H J930 ATC600F5R6JT250XT J935 ATC600F180
Text: Freescale Semiconductor Technical Data Document Number: MRF8P23080H Rev. 0, 5/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA and LTE base station applications with frequencies from 2300 to 2400 MHz. Can be used in Class AB and Class C for all typical
|
Original
|
PDF
|
MRF8P23080H
MRF8P23080HR3
MRF8P23080HSR3
GSC356-HYB2500
GRM21BR71H105KA12
ATC600F100JT250XT
MRF8P23080H
J930
ATC600F5R6JT250XT
J935
ATC600F180
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