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    ATC700B122 Search Results

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    ATC700B122 Price and Stock

    American Technical Ceramics Corp ATC700B122KRW50X

    CAPACITOR, CERAMIC, MULTILAYER, 50 V, C0G, 0.0012 UF, THROUGH HOLE MOUNT
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    Quest Components ATC700B122KRW50X 50
    • 1 $4.05
    • 10 $2.025
    • 100 $2.025
    • 1000 $2.025
    • 10000 $2.025
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    Kyocera AVX Components 700B122KT50XT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 1200pF Tol 10% Las Mkg
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 700B122KT50XT Reel 2,000 500
    • 1 -
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    • 1000 $3.54
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    Kyocera AVX Components 700B122GTN50XC100

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 1200pF Tol 2% Las Mkg
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 700B122GTN50XC100 WAFL 100 100
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    • 100 $10.33
    • 1000 $10.33
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    Kyocera AVX Components 700B122KW50XT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 1200pF Tol 10% Las Mkg
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 700B122KW50XT Reel 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.53
    • 10000 $3.53
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    Kyocera AVX Components 700B122GTN50X

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 1200PF 50V 2%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 700B122GTN50X WAFL 100
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    ATC700B122 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    McMaster-Carr

    Abstract: m174 92196a ATC200B marking h5 92196A1 91252 5050-0037
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


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    SD3933 2002/95/EEC SD3933 McMaster-Carr m174 92196a ATC200B marking h5 92196A1 91252 5050-0037 PDF

    L-Band 1200-1400 MHz

    Abstract: ATC100B390 CR1206-8W ATC100B101 ATC100B910
    Text: STAC1214-250 LDMOS L-band radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz ■ ST air cavity / STAC package Description


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    STAC1214-250 STAC1214-250 STAC265B L-Band 1200-1400 MHz ATC100B390 CR1206-8W ATC100B101 ATC100B910 PDF

    RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

    Abstract: MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR
    Text: SD2932  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs PRELIMINARY DATA ν ν ν ν GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH-PULL POUT = 300W MIN. WITH 15 dB GAIN @175 MHz DESCRIPTION The SD2932 is a gold metallized N-Channel MOS


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    SD2932 SD2932 TSD2932 RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz MARCON NH capacitor marcon capacitor nc inductor vk200 Variable resistor 10K ohm resistor 4.7k ohm neosid* 10k RG316 coaxial cable rs-2b resistor 8 pin SURFACE MOUNT RESISTOR PDF

    ST T8 1060

    Abstract: ST T4 1060 l0741 L0148 1090mhz ATC100A300JP
    Text: STAC1011-350 LDMOS avionics radar transistor Datasheet — preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■ ST Air Cavity / STAC package Description


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    STAC1011-350 STAC1011-350 STAC265B ST T8 1060 ST T4 1060 l0741 L0148 1090mhz ATC100A300JP PDF

    Untitled

    Abstract: No abstract text available
    Text: SD3933 HF/VHF/UHF RF power N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


    Original
    SD3933 2002/95/EEC SD3933 PDF

    McMaster-Carr

    Abstract: SD3933 12AWG 700B M177 MCMASTER 92196A146 ATC200B103MW50X 92196A1 92196A108
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive


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    SD3933 2002/95/EEC SD3933 McMaster-Carr 12AWG 700B M177 MCMASTER 92196A146 ATC200B103MW50X 92196A1 92196A108 PDF

    5W 6.8 ohm k ceramic resistor

    Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r
    Text: SD2922 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is


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    SD2922 SD2922 5W 6.8 ohm k ceramic resistor 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor FAIR-RITE 2743021447 UT141-25 GRM43-4X7R-104K500 diode L2.70 C22-C23 GRM43-4X7r PDF

    mallory date code

    Abstract: McMaster-Carr 92196A146 1200 uF 63V capacitor SD3933 arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European


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    SD3933 2002/95/EEC SD3933 200MHz. mallory date code McMaster-Carr 92196A146 1200 uF 63V capacitor arco capacitors capacitor ceramic variable RF MALLORY CAPACITOR date code Mallory Capacitor M177 PDF

    Untitled

    Abstract: No abstract text available
    Text: STAC1011-350 LDMOS avionics radar transistor Datasheet - production data Features • Excellent thermal stability • Common source configuration push-pull • POUT = 350 W with 15 dB gain over 1030 1090 MHz • ST Air Cavity / STAC package Description STAC265B


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    STAC1011-350 STAC265B STAC1011-350 DocID022043 PDF

    ATC100B101

    Abstract: STAC265B ATC100B910 ATC100B390 STAC1214-250
    Text: STAC1214-250 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet − preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 250 W with 14 dB gain over 1200 1400 MHz


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    STAC1214-250 STAC1214-250 STAC265B ATC100B101 ATC100B910 ATC100B390 PDF

    9966

    Abstract: SHT31 12AWG 700B M177 SD3933 91252 ATC700B122 McMaster-Carr a/IC+oz+9966
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


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    SD3933 2002/95/EEC SD3933 9966 SHT31 12AWG 700B M177 91252 ATC700B122 McMaster-Carr a/IC+oz+9966 PDF

    5W 6.8 ohm k ceramic resistor

    Abstract: 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm
    Text: SD2922  RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs • ■ ■ ■ GOLD METALLIZATION EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 300W MIN. WITH 12.5 dB GAIN @175 MHz DESCRIPTION The SD2922 is a gold metallized N-Channel MOS field-effect RF power transistor. The SD2922 is


    Original
    SD2922 SD2922 5W 6.8 ohm k ceramic resistor 5W 47 ohm J ceramic resistor Variable resistor 10K ohm MARCON NH capacitor GC812 neosid* 10k mount chip transistor 13W SME63T10RM variable RESISTANCE 1 M OHM resistor 560 ohm PDF

    92196A146

    Abstract: SD3933 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC European directive Description The SD3933 is an N-channel MOS field-effect RF


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    SD3933 2002/95/EEC SD3933 92196A146 rf transistor mark code H1 12AWG 700B M177 toroid 6009 McMaster-Carr PDF

    mallory date code

    Abstract: McMaster-Carr 12AWG 700B M177 SD3933 st code vishay label
    Text: SD3933 RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary Data Features • Gold metallization ■ Excellent thermal stability ■ Common source configuration ■ POUT = 350 W min. with 29 dB gain @ 30 MHz ■ In compliance with the 2002/95/EEC european


    Original
    SD3933 2002/95/EEC SD3933 200MHz. mallory date code McMaster-Carr 12AWG 700B M177 st code vishay label PDF

    L1128

    Abstract: L038 1030-1090MHz
    Text: STAC1011-350 RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Preliminary data Features • Excellent thermal stability ■ Common source configuration push-pull ■ POUT = 350 W with 15 dB gain over 1030 1090 MHz ■


    Original
    STAC1011-350 STAC1011-350 STAC265B L1128 L038 1030-1090MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: SD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs . . . . . . . GOLD METALLIZATION 2 - 5 0 0 MHz 5 WATTS 28 VOLTS 13.5 dB MIN. AT 400 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The SD2900 is a gold metallized N-Channel MOS


    OCR Scan
    SD2900 SD2900 1021498C 1010936C PDF