Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    ATC800 Search Results

    SF Impression Pixel

    ATC800 Price and Stock

    American Technical Ceramics Corp ATC800B0R3BTDRD

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics ATC800B0R3BTDRD 16,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    American Technical Ceramics Corp ATC800B2R7BT500XT

    CERAMIC CAPACITOR, CERAMIC, 500V, 3.7037% +TOL, 3.7037% -TOL, C0G, 30PPM/CEL TC, 0.0000027UF, SURFACE MOUNT, 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC800B2R7BT500XT 3,256
    • 1 $4.2
    • 10 $4.2
    • 100 $4.2
    • 1000 $2.1
    • 10000 $2.1
    		Buy Now
    ATC800B2R7BT500XT 172
    • 1 $4.4697
    • 10 $4.4697
    • 100 $2.7563
    • 1000 $2.7563
    • 10000 $2.7563
    		Buy Now

    American Technical Ceramics Corp ATC800B4R7BT500XT

    CERAMIC CAPACITOR, CERAMIC, 500V, 2.13% +TOL, 2.13% -TOL, C0G, 30PPM/CEL TC, 0.0000047UF, SURFACE MOUNT, 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC800B4R7BT500XT 1,776
    • 1 $5.25
    • 10 $5.25
    • 100 $5.25
    • 1000 $2.625
    • 10000 $2.625
    		Buy Now

    American Technical Ceramics Corp ATC800B200GT500XT

    CERAMIC CAPACITOR, CERAMIC, 500V, 2% +TOL, 2% -TOL, C0G, 30PPM/CEL TC, 0.00002UF, SURFACE MOUNT, 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC800B200GT500XT 1,527
    • 1 $12.993
    • 10 $12.993
    • 100 $12.993
    • 1000 $6.4965
    • 10000 $6.4965
    		Buy Now

    American Technical Ceramics Corp ATC800B1R5BT500XT

    CERAMIC CAPACITOR, CERAMIC, 500V, 6.67% +TOL, 6.67% -TOL, C0G, 30PPM/CEL TC, 0.0000015UF, SURFACE MOUNT, 1111
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components ATC800B1R5BT500XT 840
    • 1 $5.25
    • 10 $5.25
    • 100 $5.25
    • 1000 $2.625
    • 10000 $2.625
    		Buy Now
    Find more ATC800 price and stock on Findchips.com

    ATC800 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATC800E222JAR2500X American Technical Ceramics Ceramic Capacitor 2200PF 500V AXIAL Original PDF
    ATC800E222JAR2500X American Technical Ceramics Ceramic Capacitor 2200PF 500V AXIAL Original PDF

    ATC800 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous


    Original     		PDF AFT26P100â

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


    Original     		PDF PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147

    ATC800B

    Abstract: BLF7G20LS-200 BLF7G20
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


    Original     		PDF BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 ATC800B BLF7G20LS-200 BLF7G20

    Untitled

    Abstract: No abstract text available
    Text: ATC 800 R Series NPO Ceramic, High RF Power Lowest ESR Multilayer Capacitors • Rugged, reliable NPO dielectric • Capacitance Range 1 pF to 100 pF • Optimized for lowest ESR and superior heat transfer • Optimized for highest self resonant frequency


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6V13250H Rev. 1, 7/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF6V13250HR3 MRF6V13250HSR3 RF Power transistors designed for CW and pulsed applications operating at


    Original     		PDF MRF6V13250H MRF6V13250HR3 MRF6V13250HSR3 MRF6V13250HR3

    Untitled

    Abstract: No abstract text available
    Text: RFHA1020 280W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology   RF OUT VD Pin 2 GND BASE Supports Multiple Pulse


    Original     		PDF RFHA1020 DS120508

    EI -40C

    Abstract: No abstract text available
    Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical


    Original     		PDF RF3933 DS120306 EI -40C

    Z25 transistor

    Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1

    Untitled

    Abstract: No abstract text available
    Text: RFHA1025 RFHA1025 280W GaN Wideband Pulsed Power Amplifier 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features  Wideband Operation: 0.96GHz to 1.215GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology 


    Original     		PDF RFHA1025 RFHA1025 96GHz 215GHz DS120613

    SEMICONDUCTOR J598

    Abstract: No abstract text available
    Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse


    Original     		PDF RFHA1023 RFHA1023 DS120508 SEMICONDUCTOR J598

    RFG1M20180

    Abstract: ATC800B820JT
    Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to


    Original     		PDF RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS120418 ATC800B820JT

    Untitled

    Abstract: No abstract text available
    Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical


    Original     		PDF RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz EAR99 RF3931 DS120306

    Untitled

    Abstract: No abstract text available
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = 13dB at 2GHz 48V Operation Typical


    Original     		PDF RF3934 RF3934 DS120306

    RFHA1023

    Abstract: SEMICONDUCTOR J598
    Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation


    Original     		PDF RFHA1023 RFHA1023 DS110630 SEMICONDUCTOR J598

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to


    Original     		PDF RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS110406

    GRM55ER72A475KA01L

    Abstract: RF3934 DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS
    Text: RF3934 120W GaN WIDEBAND POWER AMPLIFIER Package: Flanged Ceramic Features         Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain=13dB at 2GHz 48V Operation Typical Performance


    Original     		PDF RF3934 RF3934 DS111005 GRM55ER72A475KA01L DS111005 GRM32NR72A104KA01L ATC800A330JT RF3934PCBA-410 140W ERJ8GEYJ100V GaN ADS

    BLF6G20(S)-45

    Abstract: No abstract text available
    Text: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		PDF BLF6G20-230PRN; BLF6G20S-230PRN BLF6G20-230PRN 20S-230PRN BLF6G20(S)-45

    BLF578

    Abstract: AN10858 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier
    Text: AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Rev. 02 — 26 March 2010 Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun Abstract This application note describes the design and performance of a 200 W


    Original     		PDF AN10858 BLF578 BLF578, AN10858 BLF578 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier

    eaton el 198

    Abstract: ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000
    Text: Electrical Sector Solutions Volume 3 Power Distribution and Control Assemblies Volume 3: Power Distribution and Control Assemblies Eaton Corporation Electrical Sector 1111 Superior Ave. Cleveland, OH 44114 United States 877-ETN-CARE 877-386-2273 Eaton.com


    Original     		PDF 877-ETN-CARE CA08100004E V3-T2-65 V3-T2-42â V3-T2-52 V3-T2-39â V3-T2-41 V3-T9-254 V3-T7-17 CA08100004Eâ eaton el 198 ITE circuit breakers "cross reference" WESTINGHOUSE motor life line westinghouse ITE circuit breakers wiring diagram STAR DELTA motor sequential starter Project Report of smoke alarm using IC 555 doc ITE/Gould relay j13 MTBF fit IGBT 1200 UNITROL 1000

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY RFHA1027 RFHA1027 500W GaN Wide-Band Pulsed Power Amplifier The RFHA1027 is a 50V 500W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high power density Gallium


    Original     		PDF RFHA1027 RFHA1027 DS131216

    Untitled

    Abstract: No abstract text available
    Text: RFG1M20090 RFG1M20090 90W GaN Power Amplifier 1.8GHz to 2.2GHz The RFG1M20090 is optimized for commercial infrastructure, military communication, and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed


    Original     		PDF RFG1M20090 RFG1M20090 DS130823

    Untitled

    Abstract: No abstract text available
    Text: RF3933 RF3933 90W GaN Wideband Power Amplifier The RF3933 is a 48V, 90W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier


    Original     		PDF RF3933 RF3933 DS130905

    Untitled

    Abstract: No abstract text available
    Text: RF3934 RF3934 120W GaN Wideband Power Amplifier The RF3934 is a 48V 120W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical and general purpose broadband amplifier


    Original     		PDF RF3934 RF3934 DS131206