RFG1M20180
Abstract: ATC800B820JT
Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to
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PDF
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RFG1M20180
RFG1M20180
RF400-2
-36dBc
-55dBc
DS120418
ATC800B820JT
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Untitled
Abstract: No abstract text available
Text: RFG1M20180 RFG1M20180 1.8 GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT technology Typical peak modulated power>180W Advanced heat-sink technology Single circuit for 1.8GHz to
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Original
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PDF
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RFG1M20180
RFG1M20180
RF400-2
-36dBc
-55dBc
DS110406
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY RFHA1021U RFHA1021U 60W GaN Wide-Band Pulsed Power Amplifier The RFHA1021U is a 50V 60W high power amplifier designed for SBand pulsed radar, air traffic control and surveillance and general purpose broadband amplifiers applications. Using an advanced high
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Original
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PDF
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RFHA1021U
RFHA1021U
DS130924
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Untitled
Abstract: No abstract text available
Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to
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Original
|
PDF
|
RFG1M20180
RF400-2
-36dBc
-55dBc
DS120418
|