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    ATC800B5R6 Search Results

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    ATC800B5R6 Price and Stock

    Kyocera AVX Components 800B5R6BT500XT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500volts 5.6pF NP0
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    TTI 800B5R6BT500XT Reel 1,500 500
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    Kyocera AVX Components 800B5R6CT500XT1K

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 5.6PF 500V .25PF 1111
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    TTI 800B5R6CT500XT1K Reel 1,000
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    Kyocera AVX Components 800B5R6BT500T

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 5.6pF Tol 0.1pF
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    TTI 800B5R6BT500T Reel 500
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    Kyocera AVX Components 800B5R6BT500XTV

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 5.6pF Tol 0.1pF Las Mkg Vertical
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    TTI 800B5R6BT500XTV Reel 500
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    Kyocera AVX Components 800B5R6BW500XTV

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 500V 5.6pF Tol 0.1pF Las Mkg Vertical
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    TTI 800B5R6BW500XTV Reel 500
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    ATC800B5R6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Z25 transistor

    Abstract: AFT05MP075N ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1 AFT05MP075NR1
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 Z25 transistor ATC800B101JT500XT Wire Microstrip Line Z-34 J103 transistor atc600f150jt250xt BEAD10 AFT05MP075GNR1

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz EAR99 RF3931 DS120306

    Untitled

    Abstract: No abstract text available
    Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2020 NPT2020 NDS-037

    amplifier 900mhz

    Abstract: No abstract text available
    Text: RF3931 30W GaN Wideband Power Amplifier Package: Hermetic 2-Pin Flanged Ceramic Features • Broadband Operation DC to 3.5GHz  Advanced GaN HEMT Technology  Advanced Heat-Sink Technology  Gain = 15dB at 2GHz  48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS130501 amplifier 900mhz

    simple power supply schematic diagram

    Abstract: RF3931S2 ATC800A3R3BT
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS120406 simple power supply schematic diagram RF3931S2 ATC800A3R3BT

    RF3931

    Abstract: 46dBm
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN


    Original     		PDF RF3931 900MHz RF3931 DS110317 46dBm

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MP075N Rev. 0, 2/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MP075NR1 AFT05MP075GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MP075N AFT05MP075NR1 AFT05MP075GNR1 AFT05MP075NR1

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz DS120406

    Untitled

    Abstract: No abstract text available
    Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2020 NPT2020 NDS-037

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS120202

    ATC800B5R6

    Abstract: ATC800B6R8 ATC800B120
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Flanged Ceramic Features „ „ „ „ „ Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN


    Original     		PDF RF3931 900MHz RF3931 DS111026 ATC800B5R6 ATC800B6R8 ATC800B120

    Untitled

    Abstract: No abstract text available
    Text: NPT2020 Preliminary Gallium Nitride 48V, 50W, DC-3.5 GHz HEMT Built using the SIGANTIC process - A proprietary GaN-on-Silicon technology Features •     Suitable for linear and saturated applications Tunable from DC-3.5 GHz 48V Operation Industry Standard Package


    Original     		PDF NPT2020 NPT2020 NDS-037

    Untitled

    Abstract: No abstract text available
    Text: RF3931 RF3931 30W GaN Wideband Power Amplifier The RF3931 is a 48V 30W high power discrete amplifier designed for commercial wireless infrastructure, cellular and WiMAX infrastructure, industrial/scientific/medical, and general purpose broadband amplifier


    Original     		PDF RF3931 RF3931 DS130905

    GaN ADS

    Abstract: ATC800B ATC800B120 ATC800B6R8 RF3931 EAR99 ECE-V1HA101UP ERJ8GEYJ100V
    Text: RF3931 30W GaN WIDE-BAND POWER AMPLIFIER Package Style: Flanged Ceramic Features      Broadband Operation DC to 3GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain=15dB at 2GHz 48V Operation Typical Performance at 900MHz RF IN


    Original     		PDF RF3931 900MHz EAR99 RF3931 130mA DS101115 GaN ADS ATC800B ATC800B120 ATC800B6R8 ECE-V1HA101UP ERJ8GEYJ100V

    Untitled

    Abstract: No abstract text available
    Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz


    Original     		PDF RF3931 900MHz RF3931 DS121207