ATF-26836
Abstract: ATF-26836-STR ATF-26836-TR1 gaas fet micro-X Package
Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 Features Description • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
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ATF-26836
ATF-26836
ATF-26836-STR
ATF-26836-TR1
gaas fet micro-X Package
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Untitled
Abstract: No abstract text available
Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
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ATF-26836
ATF-26836
5965-8704E
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gaas fet micro-X Package
Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 oscillator 77 GHZ atf26836tr1 ATF26836-STR
Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor
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Original
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PDF
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ATF-26836
ATF-26836
metallizati200
5965-8704E
gaas fet micro-X Package
ATF-26836-STR
ATF-26836-TR1
oscillator 77 GHZ
atf26836tr1
ATF26836-STR
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F2683
Abstract: No abstract text available
Text: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor
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TF-26836
ATF-26836
5965-8704E
44475A4
DD1771Ö
F2683
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Untitled
Abstract: No abstract text available
Text: ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET Wtinl H E W L E T T W!kM P A C K A R D 36 micro-X Package1 Features High îm a x : 60 GHz typical High Output Power: 18.0 dBm typical Pi <jb at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz Cost Effective Ceramic Microstrip Package
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ATF-26836
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gaas fet micro-X Package
Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 GaAs FET Micro-X AVANTEK transistor AVANTEK oscillator
Text: .AVANTEK I N C SDE D 0AV ANTE K 114nbh Q00b503 a ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET 'T-3I-X5 Features • • • • • Avantek 36 micro-X Package1 High fMAx: 60 GHz typical High Output Power: 18.0 dBm typical Pi dB at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz
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114nbh
Q00b503
ATF-26836
ATF-26836
pe093
CA95054
gaas fet micro-X Package
ATF-26836-STR
ATF-26836-TR1
GaAs FET Micro-X
AVANTEK transistor
AVANTEK oscillator
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AVANTEK transistor
Abstract: No abstract text available
Text: .AVANTEK EGE INC D 0AYANTEK U 4 1 U h 0 D Q t iS f l 3 a ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET 'T-3I-X5 Features Avantek 36 micro-X Package1 • High fMAx: 60 GHz typical • High Output Power: 18.0 dBm typical Pi dB at 12 GHz • High Gain: 9.0 dB typical Gss at 12 GHz
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ATF-26836
AVANTEK transistor
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Untitled
Abstract: No abstract text available
Text: What HEWLETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 F e atu res D escription • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz The ATF-26836 is a high perfor mance gallium arsenide Schottkybarrier-gate field effect transistor
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OCR Scan
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ATF-26836
ATF-26836
sy-25
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