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    ATF26836TR1 Search Results

    ATF26836TR1 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ATF-26836-TR1 Agilent Technologies 2-16 GHz General Purpose Gallium Arsenide FET Original PDF
    ATF26836-TR1 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    ATF26836TR1 Datasheets Context Search

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    ATF-26836

    Abstract: ATF-26836-STR ATF-26836-TR1 gaas fet micro-X Package
    Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 Features Description • High Output Power: 18.0␣ dBm Typical P 1 dB at 12␣ GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


    Original
    PDF ATF-26836 ATF-26836 ATF-26836-STR ATF-26836-TR1 gaas fet micro-X Package

    Untitled

    Abstract: No abstract text available
    Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


    Original
    PDF ATF-26836 ATF-26836 5965-8704E

    gaas fet micro-X Package

    Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 oscillator 77 GHZ atf26836tr1 ATF26836-STR
    Text: 2 – 16 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 36 micro-X Package Features Description • High Output Power: 18.0 dBm Typical P1 dB at 12 GHz The ATF-26836 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor


    Original
    PDF ATF-26836 ATF-26836 metallizati200 5965-8704E gaas fet micro-X Package ATF-26836-STR ATF-26836-TR1 oscillator 77 GHZ atf26836tr1 ATF26836-STR

    F2683

    Abstract: No abstract text available
    Text: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor


    OCR Scan
    PDF TF-26836 ATF-26836 5965-8704E 44475A4 DD1771Ö F2683

    Untitled

    Abstract: No abstract text available
    Text: ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET Wtinl H E W L E T T W!kM P A C K A R D 36 micro-X Package1 Features High îm a x : 60 GHz typical High Output Power: 18.0 dBm typical Pi <jb at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz Cost Effective Ceramic Microstrip Package


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    PDF ATF-26836

    gaas fet micro-X Package

    Abstract: ATF-26836 ATF-26836-STR ATF-26836-TR1 GaAs FET Micro-X AVANTEK transistor AVANTEK oscillator
    Text: .AVANTEK I N C SDE D 0AV ANTE K 114nbh Q00b503 a ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET 'T-3I-X5 Features • • • • • Avantek 36 micro-X Package1 High fMAx: 60 GHz typical High Output Power: 18.0 dBm typical Pi dB at 12 GHz High Gain: 9.0 dB typical Gss at 12 GHz


    OCR Scan
    PDF 114nbh Q00b503 ATF-26836 ATF-26836 pe093 CA95054 gaas fet micro-X Package ATF-26836-STR ATF-26836-TR1 GaAs FET Micro-X AVANTEK transistor AVANTEK oscillator

    AVANTEK transistor

    Abstract: No abstract text available
    Text: .AVANTEK EGE INC D 0AYANTEK U 4 1 U h 0 D Q t iS f l 3 a ATF-26836 2-16 GHz General Purpose Gallium Arsenide FET 'T-3I-X5 Features Avantek 36 micro-X Package1 • High fMAx: 60 GHz typical • High Output Power: 18.0 dBm typical Pi dB at 12 GHz • High Gain: 9.0 dB typical Gss at 12 GHz


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    PDF ATF-26836 AVANTEK transistor

    Untitled

    Abstract: No abstract text available
    Text: What HEWLETT* mLliM PACKARD 2-1 6 GHz General Purpose Gallium Arsenide FET Technical Data ATF-26836 F e atu res D escription • High Output Pow er: 18.0 dBm Typical Pi ¿s at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor


    OCR Scan
    PDF ATF-26836 ATF-26836 sy-25