Untitled
Abstract: No abstract text available
Text: ^ A T bT Preliminary Data Sheet January 1992 ATT7C106 Microelectronics High-Speed CMOS SRAM 1 Mbit 256K X 4 , Common I/O Features • Low-power operation — Active: 635 mW maximum at 25 ns — Standby (typical): 110 mW (TTL inputs); 11 mW (CMOS inputs) ■ Highspeed— 15 ns maximum access time
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ATT7C106
28-pin,
ATT7C106
7C106
28-Pin.
ATT7C106P-25
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CC4 22
Abstract: No abstract text available
Text: iPR 1 9 1993 = A TaT Preliminary Data Sheet January 1992 ATT7C106 Microelectronics High-Speed CMOS SRAM, 1 Mbit 256K x 4 Common I/O, Output Enable Features • Low-power operation — Active: 635 mW maximum at 25 ns — Standby (typical): 110 mW (TTL inputs):
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OCR Scan
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ATT7C106
28-pin,
ATT7C106
DS91-007
CC4 22
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