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    Abstract: No abstract text available
    Text: Preliminary Data Sheet January 1992 AT&T a Microelectronics ATT7C107 High-Speed CMOS SRAM 1 Mbit 1 Mbit x 1 , Separate I/O Features • Low-power operation —Active: 635 mW maximum at 25 ns — Standby (typical): 110 mW (TTL inputs); 11 mW (CMOS inputs)


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    PDF ATT7C107 --28-pin, -28-pin, ATT7C107 7C107 28-Pin, ATT7C107P-25 ATT7C107J-25