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    AVALANCHE 1550NM PHOTODIODE 5 GHZ Search Results

    AVALANCHE 1550NM PHOTODIODE 5 GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CSF-5312-20DA-3 Amphenol Communications Solutions 1.25G CSFP 20km 1550nm/1310nm I Temp Visit Amphenol Communications Solutions
    CSF-5312-40DA-3 Amphenol Communications Solutions 1.25G CSFP ER 1550nm/1310nm I Temp Visit Amphenol Communications Solutions
    CSF-5312-20D-3 Amphenol Communications Solutions 1.25G CSFP 20km 1550nm/1310nm C Temp Visit Amphenol Communications Solutions
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation

    AVALANCHE 1550NM PHOTODIODE 5 GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PIN photodiode responsivity 1550nm 1.1

    Abstract: GaP photodiode APD photodiode Avalanche photodiode 1310nm photodiode -28dBm sensitivity fujitsu Photodiode 1550nm bandwidth Fujitsu APD photodiode 40ghz Photodiode apd high sensitivity 550NM photodiode avalanche 1550nm photodiode 5 Ghz
    Text: FPD5W1KX Avalanche Photodiode FEATURES • • • • • • • • Data rates up to 2.5Gb/s Operating temperature: -40°c to 85°C Photosensitive diameter: 30µm High cut-off frequency: 3.0GHz at M=5 and 10 Large gain-bandwidth product: 40GHz Low dark current: 20nA


    Original     		PDF 40GHz 1550nm. In4888 PIN photodiode responsivity 1550nm 1.1 GaP photodiode APD photodiode Avalanche photodiode 1310nm photodiode -28dBm sensitivity fujitsu Photodiode 1550nm bandwidth Fujitsu APD photodiode 40ghz Photodiode apd high sensitivity 550NM photodiode avalanche 1550nm photodiode 5 Ghz

    PIN photodiode responsivity 1550nm 1.1

    Abstract: avalanche photodiode avalanche photodiode 1550nm sensitivity PIN photodiode responsivity 1550nm 2,5 GHz Fujitsu APD avalanche 1550nm photodiode 5 Ghz photodiode 40ghz photodiode Avalanche photodiode photodiode Avalanche photodiode APD avalanche 1550nm photodiode bandwidth 5 Ghz
    Text: FPD5W1KX Avalanche Photodiode FEATURES • • • • • • • • Data rates up to 2.5Gb/s Operating temperature: -40°c to 85°C Photosensitive diameter: 30µm High cut-off frequency: 3.0GHz at M=5 and 10 Large gain-bandwidth product: 40GHz Low dark current: 20nA


    Original     		PDF 40GHz 1550nm. In4888 PIN photodiode responsivity 1550nm 1.1 avalanche photodiode avalanche photodiode 1550nm sensitivity PIN photodiode responsivity 1550nm 2,5 GHz Fujitsu APD avalanche 1550nm photodiode 5 Ghz photodiode 40ghz photodiode Avalanche photodiode photodiode Avalanche photodiode APD avalanche 1550nm photodiode bandwidth 5 Ghz

    photo diode

    Abstract: 1550nm photodiode 5 Ghz avalanche 1550nm photodiode 5 Ghz Photo Diodes 1550nm laser diode avalanche photodiode InGaAs maximum current rating of diodes 1550nm photodiode 8 Ghz avalanche diode
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME PD8933 DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • φ35 µ m active diameter a sensitive area of φ35 µ m, PD8XX3 is suitable for receiving


    Original     		PDF PD8933 1600nm. 1550nm photo diode 1550nm photodiode 5 Ghz avalanche 1550nm photodiode 5 Ghz Photo Diodes 1550nm laser diode avalanche photodiode InGaAs maximum current rating of diodes 1550nm photodiode 8 Ghz avalanche diode

    APD 1550 nm bare die

    Abstract: EMCORE APD
    Text: G1013-406, 2.5G Avalanche Photodiode APD Bare Die DATASHEET | MAY 2015 FIBER OPTICS EMCORE’s PS-G1013-406 2.5G Avalanche Photodiode (APD), Top Illuminated APD Chip is designed for GPON ONU and 2.6 Gb/s applications. It has high responsivity and low capacitance with low noise equivalent power and is ideally


    Original     		PDF G1013-406, PS-G1013-406 G1013-406 APD 1550 nm bare die EMCORE APD

    IAG 080

    Abstract: No abstract text available
    Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at


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    InGaas PIN photodiode, 1550 NEP

    Abstract: InGaAs Photodiode 1550nm photodiode 1550nm nep InGaas PIN photodiode, 1550 sensitivity InGaas APD photodiode, 1550 sensitivity InGaAs APD photodiode 1550 pin photodiode 2 GHz 1550 InGaAs Avalanche Photodiode IAG-Series avalanche 1550nm photodiode 5 Ghz IAG 080
    Text: InGaAs Avalanche Photodiode IAG-Series DESCRIPTION The IAG-series avalanche photodiode is the largest commercially available InGaAs APD with high responsivity and extremely fast rise and fall times throughout the 1000 to 1630 nm wavelength range. The peak responsivity at


    Original     		PDF

    avalanche 1550nm photodiode 5 Ghz

    Abstract: InGaAs apd photodiode OD-8421 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz APD 1300 2,5 GHz
    Text: Rev. 1.1 March 11, 2002 OD-8421 InGaAs APD Coaxial Module FEATURES n n n n n n High Quantum Efficiency InGaAs Avalanche Photodiode. Low Dark Current. Bandwidth greater than 1 GHz. Wide Operating Temperature Range : − 40 to + 70°C Small Coaxial Module Package : Height = 6 mm.


    Original     		PDF OD-8421 SW1-290 avalanche 1550nm photodiode 5 Ghz InGaAs apd photodiode OD-8421 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz APD 1300 2,5 GHz

    GN2003

    Abstract: SUMITOMO APD ROSA SRD2441-CG5 10G APD ROSA Sumitomo ROSA avalanche 1550nm photodiode 5 Ghz SRD2441-LG5 10gb rosa apd HUW0526013-01E 10G avalanche photodiode
    Text: Sumitomo Electric Industries, Ltd. Part No.: SRD2441-LG5 Document No.: HUW0526013-01E Date of issue: August 1, 2007 Preliminary Specification of APD Preamplifier Module SRD2441-LG5 RoHS Compliant Sumitomo Electric Industries, Ltd. Sumitomo Electric Industries, Ltd.


    Original     		PDF SRD2441-LG5 HUW0526013-01E SRD2441-LG5 10Gb/s -27dBm HUW0526013-01A GN2003 SUMITOMO APD ROSA SRD2441-CG5 10G APD ROSA Sumitomo ROSA avalanche 1550nm photodiode 5 Ghz 10gb rosa apd 10G avalanche photodiode

    10G APD chip

    Abstract: 10G APD ROSA GN2003 HUW0626006-01A HUW0626006-01D PRBS231-1 R1550 avalanche photodiode 1550nm sensitivity sumitomo apd rosa SRD2441-CG5
    Text: Sumitomo Electric Industries, Ltd. Part No.: SRD4442-CS5 Document No.: HUW0626006-01D Date of issue: Mar. 28 2007 Preliminary Specification of APD Preamplifier Module SRD4442-CS5 RoHS Compliant Sumitomo Electric Industries, Ltd. Sumitomo Electric Industries, Ltd.


    Original     		PDF SRD4442-CS5 HUW0626006-01D 10Gb/s -27dBm syste31 10G APD chip 10G APD ROSA GN2003 HUW0626006-01A HUW0626006-01D PRBS231-1 R1550 avalanche photodiode 1550nm sensitivity sumitomo apd rosa SRD2441-CG5

    InGaAs photodiode 100ps

    Abstract: InGaAs apd photodiode OF3635R-C3 PRBS223 STM-16 TO56 package avalanche photodiode 1550nm sensitivity avalanche 1550nm photodiode bandwidth 5 Ghz PIN photodiode 1550nm 2.5gbps oki receiver 5 pin coaxial 2.5Gbps
    Text: JOG-01087 001 OKI Electronics Components Preliminary OF3635R-C3 Rev. 1 [9. 2003] 2.5Gbps APD-TIA receiver optical sub-assembly ROSA 1. DESCRIPTION The OF3635R-C3 is a receiver optical sub-assembly(ROSA) for 2.5Gbps transmission. It uses an InGaAs avalanche photodiode with a low noise preamplifier in a hermetically sealed coaxial package. It incorporates a


    Original     		PDF JOG-01087 OF3635R-C3 OF3635R-C3 -34dBm OC-48/SDH STM-16 D-41460 InGaAs photodiode 100ps InGaAs apd photodiode PRBS223 STM-16 TO56 package avalanche photodiode 1550nm sensitivity avalanche 1550nm photodiode bandwidth 5 Ghz PIN photodiode 1550nm 2.5gbps oki receiver 5 pin coaxial 2.5Gbps

    InGaAs Photodiode 1550nm

    Abstract: avalanche photodiode ingaas ghz InGaas APD photodiode, 1550 sensitivity Receptacle InGaAs APD photodiode 1550
    Text: PD LD PDINK Series InGaAs Avalanche Photodiodes Inc. InGaAs APD’s PD-LD Inc. offers low noise, high responsivity InGaAs Avalanche Photo Diodes APD’s in convenient fiber coupled packages. These assemblies incorporate 55 micron diameter active area APD’s that responds optimally to


    Original     		PDF 10meter InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz InGaas APD photodiode, 1550 sensitivity Receptacle InGaAs APD photodiode 1550

    InGaAs apd photodiode

    Abstract: avalanche photodiode 1550nm sensitivity photodiode 1550nm 4 Ghz PRBS223 STM-16 PIN photodiode 1550nm 2.5gbps avalanche photodiode bias and high voltage ingaas apd preamp receiver -20 1.25 avalanche 1550nm photodiode 5 Ghz
    Text: JOG-01020 001 OKI Electronics Components OF3633R-C3 Rev. 5 [9. 2004] 2.5Gbps APD-TIA receiver optical sub-assembly ROSA 1. DESCRIPTION The OF3633R-C3 is a receiver optical sub-assembly(ROSA) for 2.5Gbps transmission. It uses an InGaAs avalanche photodiode with a low noise preamplifier in a hermetically sealed coaxial package. It incorporates a


    Original     		PDF JOG-01020 OF3633R-C3 OF3633R-C3 -34dBm OC-48/SDH STM-16 D-41460 InGaAs apd photodiode avalanche photodiode 1550nm sensitivity photodiode 1550nm 4 Ghz PRBS223 STM-16 PIN photodiode 1550nm 2.5gbps avalanche photodiode bias and high voltage ingaas apd preamp receiver -20 1.25 avalanche 1550nm photodiode 5 Ghz

    InGaAs Photodiode 1550nm

    Abstract: avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity 1550nm photodiode 5 Ghz FPD5W1KS avalanche photodiode ingaas ghz apd photodiode responsivity 1550nm photodiode 1550nm bandwidth Fujitsu avalanche photodiode photodiode 1550nm
    Text: FPD5W1KS InGaAs Avalanche Photodiode APPLICATIONS • 2.4 Gb/s optical transmission systems DESCRIPTION The FPD5W1KS is a wide bandwidth, high sensitivity InGaAs avalanche photodiode APD optimized for operation at 1550nm. This APD is designed for use in optical transmission systems


    OCR Scan     		PDF 1550nm. 1550nm InGaAs Photodiode 1550nm avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity 1550nm photodiode 5 Ghz FPD5W1KS avalanche photodiode ingaas ghz apd photodiode responsivity 1550nm photodiode 1550nm bandwidth Fujitsu avalanche photodiode photodiode 1550nm

    avalanche photodiode 1550nm sensitivity

    Abstract: InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 multiplication IC
    Text: InGaAs AVALANCHE PHOTODIODE FPD15W51RT DESCRIPTION The FPD15W51RT is a wide bandwidth and high sensitivity InGaAs ava­ lanche photodiode APD mounted on a low parasitic ceramic carrier designed for use in optical transmission systems operating at a giga-bit-rate,


    OCR Scan     		PDF FPD15W51RT FPD15W51RT 1550nm. 000SD3D 371H75Î avalanche photodiode 1550nm sensitivity InGaAs Photodiode 1550nm photodiode sensitivity 1550nm 2 multiplication IC

    avalanche 1550nm photodiode 5 Ghz

    Abstract: FPD15U51KS InGaAs Photodiode 1550nm fpd15u51 apd photodiode responsivity 1550nm
    Text: FPD15U51KS DESCRIPTION The FPD15U51KS is an InGaAs Avalanche Photodiode APD w ith a m u lti­ mode fiber pigtail designed fo r use in 1550nm wavelength optical trans­ mission systems operating at high-bit-rates and over long distances. Fujitsu's advanced InGaAs/lnP material technology realizes a high re lia b ility


    OCR Scan     		PDF FPD15U51KS FPD15U51KS 1550nm 374T75b 0GGSD14 avalanche 1550nm photodiode 5 Ghz InGaAs Photodiode 1550nm fpd15u51 apd photodiode responsivity 1550nm

    FPD15U51JT

    Abstract: InGaAs Photodiode 1550nm 1550NM APD "PhotoDiode" 1550nm avalanche 1550nm photodiode 5 Ghz
    Text: FPD15U51JT a v a la n c h e ph o to m o d e DESCRIPTION The FPD15U51JT is an InGaAs avalanche photodiode APD with a multimode fiber pigtail designed for use in optical transmission systems operating at a high-bit-rate and a long distance. The APD chip has a photosensitive


    OCR Scan     		PDF FPD15U51JT FPD15U51JT 50/xm. 0GGSQ11 InGaAs Photodiode 1550nm 1550NM APD "PhotoDiode" 1550nm avalanche 1550nm photodiode 5 Ghz

    InGaAs Photodiode 1550nm

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME FEATURES DESCRIPTION PD8XX3 series are InGaAs avalanche photodiode which has • d>35 /i m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having


    OCR Scan     		PDF 1600nm. 1550nm InGaAs Photodiode 1550nm

    1550nm photodiode 5 Ghz

    Abstract: 1550nm photodiode 1.6 Ghz avalanche 1550nm photodiode 5 Ghz cd photo diode avalanche photodiode 1550nm InGaAs Photodiode 1550nm 1550nm photodiode 8 Ghz PIN Photodiode 1550nm PIN Photodiode 1550nm 4 ghz PD8933
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • 035 a • L o w noise s e n s itiv e receiving the area of 035 light having fim , PD 8X X 3 a wavelength


    OCR Scan     		PDF 1600nm. 1550nm 1550nm photodiode 5 Ghz 1550nm photodiode 1.6 Ghz avalanche 1550nm photodiode 5 Ghz cd photo diode avalanche photodiode 1550nm InGaAs Photodiode 1550nm 1550nm photodiode 8 Ghz PIN Photodiode 1550nm PIN Photodiode 1550nm 4 ghz PD8933

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LASER DIODES PD8XX3 SERIES InGaAs AVALANCHE PHOTO DIODES TYPE NAME DESCRIPTION FEATURES PD8XX3 series are InGaAs avalanche photodiode which has • <t>35^m active diameter a • L o w noise s e n s itiv e receiving the a re a of <t>35^m , light having


    OCR Scan     		PDF 1600nm. 1550nm

    FPD5W1KS

    Abstract: Fujitsu Quantum Devices FPD5W1KS avalanche photodiode avalanche photodiode 1550nm sensitivity InGaAs apd photodiode avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity single mode photodiode Avalanche photodiode avalanche photodiode noise factor Fujitsu avalanche photodiode
    Text: InGaAs Avalanche Photodiode FPD5W1KS FEATURES • • • • • • • • Multi-mode fiber pigtail 30dB Optical Return Loss ORL 30 |jm active area APD High reliability planar structure with a guard ring based on advanced InGaAs/lnP material technology


    OCR Scan     		PDF 1550nm. FCSI0199M200 FPD5W1KS Fujitsu Quantum Devices FPD5W1KS avalanche photodiode avalanche photodiode 1550nm sensitivity InGaAs apd photodiode avalanche 1550nm photodiode 5 Ghz avalanche photodiode 1550nm sensitivity single mode photodiode Avalanche photodiode avalanche photodiode noise factor Fujitsu avalanche photodiode

    InGaAs Photodiode 1550nm

    Abstract: avalanche photodiode ingaas ghz PD893E6
    Text: MITSUBISHI ELECTRIC CORPORATION * DATE: SPECIFICATION -SHEET 1 PREPARED BY: CHECKED BY: Y.Tanaka APPROVED BY: I I I I 1 lU U r u p S Aa ro Un I I : PD893E6 1. TYPE 2. APPLICATION : OPTICAL COMMUNICATION 3. STRUCTURE : <J>20 jim InGaAs AVALANCHE PHOTODIODE


    OCR Scan     		PDF PD893E6 100jiA 1550nm, 130MHz GNOK-PD893E6 PD893E6-01 InGaAs Photodiode 1550nm avalanche photodiode ingaas ghz

    PD839C4-01

    Abstract: InGaAs apd photodiode InGaAs APD Pre-Amplifier avalanche 1550nm photodiode 5 Ghz
    Text: MITSUBISHI ELECTRIC CORPORATION DATE: * PARED BY: Tentative CKED BY: _ | /vrrRQVED BY: _ _ 1. TYPE : PD839C4-01 2. APPLICATION : OPTICAL COMMUNICATION 3. STRUCTURE : <>35 urn InGaAs AVALANCHE PHOTODIODE with TIA


    OCR Scan     		PDF PD839C4-01 G480XXX GNOK-PD839C4-01-* PD839C4-01 InGaAs apd photodiode InGaAs APD Pre-Amplifier avalanche 1550nm photodiode 5 Ghz

    InGaAs Photodiode 1550nm

    Abstract: No abstract text available
    Text: MITSUBISHI L A S E R DIODES PD8XX3 SERIES InG aAs A V A L A N C H E PH O TO DIODES TYPE NAME FEATURES DESCRIPTION PD 8 X X 3 series are InGaAs avalanche photodiode which has •0 > 3 5 ^ m active diameter a • L o w noise s e n s itiv e receiving the a re a


    OCR Scan     		PDF 16D0nm. 1550nm InGaAs Photodiode 1550nm

    Untitled

    Abstract: No abstract text available
    Text: HR1201TG Photodiode Description H R 1201T G is an In G aA s avalanche photodiode for detecting 1 .0 —1.65 /um light. Its high speed pulse response m akes it suitable as an optical signal detector in high-bit-rate fiber­ optic co m m u n ications equipm ent.


    OCR Scan     		PDF HR1201TG 1201T