Untitled
Abstract: No abstract text available
Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System
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AWB7123
AWB7123
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AWB7123HM41P8
Abstract: awb7123
Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System
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AWB7123
AWB7123
AWB7123HM41P8
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PDF
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Untitled
Abstract: No abstract text available
Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System
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AWB7123
AWB7123
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Untitled
Abstract: No abstract text available
Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System
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AWB7123
AWB7123
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PDF
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AWB7123
Abstract: AWB7123HM41P8
Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System
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Original
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AWB7123
AWB7123
AWB7123HM41P8
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PDF
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Untitled
Abstract: No abstract text available
Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System
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Original
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AWB7123
AWB7123
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PDF
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Untitled
Abstract: No abstract text available
Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Eficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System
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Original
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AWB7123
AWB7123
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PDF
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