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    B 3170 Search Results

    B 3170 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ZSSC3170EA1C Renesas Electronics Corporation Automotive Sensor Signal Conditioner with LIN and PWM Interface Visit Renesas Electronics Corporation
    ISL3170EIBZ-T Renesas Electronics Corporation ±15kV ESD Protected, 3.3V, Full Fail-Safe, Low Power, High Speed or Slew Rate Limited, RS-485/RS-422 Transceivers Visit Renesas Electronics Corporation
    ZSSC3170FE1B Renesas Electronics Corporation Automotive Sensor Signal Conditioner with LIN and PWM Interface Visit Renesas Electronics Corporation
    ZSSC3170FE2T Renesas Electronics Corporation Automotive Sensor Signal Conditioner with LIN and PWM Interface Visit Renesas Electronics Corporation
    ZSSC3170FE1C Renesas Electronics Corporation Automotive Sensor Signal Conditioner with LIN and PWM Interface Visit Renesas Electronics Corporation
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    B 3170 Price and Stock

    iComTech Inc MGATE MB3170

    1 PORT RS-232/422/485 ADVANCED M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MGATE MB3170 1,779 1
    • 1 $408
    • 10 $408
    • 100 $408
    • 1000 $408
    • 10000 $408
    		Buy Now

    iComTech Inc MGATE MB3170-T

    MODBUS TCP-TO-SERIAL GATEWAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MGATE MB3170-T Box 208 1
    • 1 $521
    • 10 $521
    • 100 $521
    • 1000 $521
    • 10000 $521
    		Buy Now

    iComTech Inc MGATE MB3170I-T

    Serial Comm. Gateway advanced, 3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MGATE MB3170I-T 16 1
    • 1 $616
    • 10 $616
    • 100 $616
    • 1000 $616
    • 10000 $616
    		Buy Now

    Mid Atlantic Rugged Systems MGATE MB3170

    1 PORT MODBUS TCP GATEWAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MGATE MB3170 Box 15 1
    • 1 $408
    • 10 $408
    • 100 $408
    • 1000 $408
    • 10000 $408
    		Buy Now

    iComTech Inc MGATE MB3170I

    1 Port RS-232/422/485 advanced M
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MGATE MB3170I 5 1
    • 1 $480
    • 10 $480
    • 100 $480
    • 1000 $480
    • 10000 $480
    		Buy Now
    Find more B 3170 price and stock on Findchips.com

    B 3170 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    B3170V Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    B 3170 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR    Technical Data  Data Sheet 3170, Rev.          •      ••    ••     •      


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR    Technical Data  Data Sheet 3170, Rev. A          •      ••    ••     •      


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR    Technical Data  Data Sheet 3170, Rev.          •      ••    ••     •      


    Original     		PDF 11EC1

    31-70102-T

    Abstract: L910 734A 31-70229-1001 CABLE L910
    Text: BNC 75 ohm Amphenol High Performance Beryllium Copper Outer Contacts Fig. 1 Fig. 2 c• a c• a b b Bulkhead Jack 31-70102-T Plug 31-70228-1001 Fig.3 Fig. 4 c• c• a a b b Plug 31-70227-1001 Plug 31-70229-1001 HIGH PERFORMANCE Description Bulkhead Jack


    Original     		PDF 31-70102-T 31-70102-T L910 734A 31-70229-1001 CABLE L910

    DDR200

    Abstract: DDR266 DDR266A DDR266B DDR333 hynix module suffix
    Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide


    Original     		PDF 184pin 512Mb 400mil. 184-pin 256Mb HYMD525G726BS DDR200 DDR266 DDR266A DDR266B DDR333 hynix module suffix

    Untitled

    Abstract: No abstract text available
    Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. TSOP This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 400mil. TSOP II packages on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide


    Original     		PDF 184pin 512Mb 400mil. 184-pin 268max 256Mb

    HYMP525P72BP4

    Abstract: HYMP512R72BP4-E3 HY5PS12821BFP HYMP525R72BP4-E3 HY5PS12821B
    Text: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb B ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DDR2 DIMM


    Original     		PDF 240pin 512Mb HYMP564R72BP8-E3/C4 512MB 64Mx72 64Mx8 HY5PS12821BFP) HYMP564P72BP8-E3/C4/Y5/S5 HYMP525P72BP4 HYMP512R72BP4-E3 HY5PS12821BFP HYMP525R72BP4-E3 HY5PS12821B

    DDR2-400

    Abstract: DDR2-533 DDR2-667 HY5PS12821BFP
    Text: 240pin DDR2 VLP Registerd DIMMs based on 512 Mb B ver. This Hynix DDR2 VLP Very Low Profile registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver.


    Original     		PDF 240pin 512Mb HYMP564P72BP8L-E3/C4/Y5 512MB 64Mx72 64Mx8 HY5PS12821BFP) HYMP512P72BP4L-E3/C4/Y5 DDR2-400 DDR2-533 DDR2-667 HY5PS12821BFP

    Untitled

    Abstract: No abstract text available
    Text: Amphenol BNC 75 ohm Adapters Fig. 1 Fig. 2 a a b b 75Ω BNC Adapter J/J 31-219-75 31-70019 75Ω BNC Adapter (P/P) 31-218-75RFX Fig.3 Fig. 4 a d b d b 75Ω BNC Adapter (P/J) 31-9-75 31-9-75-RFX BNC a 75Ω BNC Tee Adapter (J/P/J) 31-70036 75Ω BNC ADAPTERS


    Original     		PDF 31-218-75RFX 31-9-75-RFX

    Untitled

    Abstract: No abstract text available
    Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. FBGA This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 60 ball FBGA package on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide a


    Original     		PDF 184pin 512Mb 184-pin 128Mb HYMD512G726BF 157max

    HYMP525R72BP4-E3

    Abstract: HY5PS12821B HY5PS12821BFP HYMP512R72BP4-E3 HYMP564R72 HY5PS12421B HY5PS12421BFP HYMP
    Text: 240pin Registered DDR2 SDRAM DIMMs based on 512 Mb B ver. This Hynix registered Dual In-Line Memory Module DIMM series consists of 512Mb B ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DDR2 DIMM


    Original     		PDF 240pin 512Mb HYMP564R72BP8-E3/C4 512MB 64Mx72 64Mx8 HY5PS12821BFP) HYMP564P72BP8-E3/C4/Y5/S5 HYMP525R72BP4-E3 HY5PS12821B HY5PS12821BFP HYMP512R72BP4-E3 HYMP564R72 HY5PS12421B HY5PS12421BFP HYMP

    hynix module suffix

    Abstract: DDR333 DDR400 DDR400B HYMD512G726BF4N DQSO d431
    Text: 184pin Registered DDR SDRAM DIMMs based on 512Mb B ver. FBGA This Hynix Registered Dual In-Line Memory Module (DIMM) series consists of 512Mb B ver. DDR SDRAMs in 60 ball FBGA package on a 184pin glass-epoxy substrate. This Hynix 512Mb B ver. based Registered DIMM series provide a


    Original     		PDF 184pin 512Mb 184-pin 157max hynix module suffix DDR333 DDR400 DDR400B HYMD512G726BF4N DQSO d431

    D-P5DW

    Abstract: 10 35L W1 double acting cylinder 10 35L CAP CDQ2B63 D-J79W ya10 THREAD ROD 11-CQ2 CQ2B16-PS
    Text: Compact Cylinder: Standard Type Double Acting, Single Rod Series CQ2 ø12, ø16, ø20, ø25, ø32, ø40, ø50, ø63, ø80, ø100 How to Order Without auto switch With auto switch CQ2 B 20 30 D CDQ2 B 20 30 D J79W S Built-in magnet Ȝ Ȝ Mounting style Ȝ B Through-hole Standard F Rod side flange style


    Original     		PDF 73C/A80C D-A7H/A80H D-A79W D-F7/J79 D-J79C D-F7W/J79W D-F79F, 20Data D-P5DW 10 35L W1 double acting cylinder 10 35L CAP CDQ2B63 D-J79W ya10 THREAD ROD 11-CQ2 CQ2B16-PS

    LP2213

    Abstract: PJ3019 LP2213H-8PIN pj30 Delta Electronics TRANSFORMERS 316366 ep1706h POT1408
    Text: Standard Bobbin Type of Magnetics Transformers EFD3009H-12PIN 316823 EPC1906H-10PIN (316656) A A 20.4 B B 0.7 G 12.2 SQ0.64 G F F E 1 E 1 UNIT : mm A = 13.5 MAX B = 4.0 0.5 C = 16.2 0.3 D = 20.5 MAX E = 3.7 0.3 F = 14.8 0.3 G = 21.0 MAX H = 2.5 0.3 I = 12.5 0.3


    Original     		PDF EFD3009H-12PIN EPC1906H-10PIN EPC1906H-11PIN EPC2508H-11PIN LP2213H-8PIN LFZ3529V-10PIN LP2213 PJ3019 LP2213H-8PIN pj30 Delta Electronics TRANSFORMERS 316366 ep1706h POT1408

    b3170v

    Abstract: B 3170 tda 1006 VEB mikroelektronik spannungsregler b 3170 tda 1083 TDA 1013 A283D tda 1042 b3170
    Text: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N r a d i o -television AUSGABE: Seite A 1 - 4 1986 Mitteilung aus dem VEB Elektronik Gera 1« Einsatz des Spannungsreglers B 3170 V im Geracord GC 6031 Ab 1/86 wird aur Verbesserung der Gleichspannungsstabilisierung


    OCR Scan     		PDF III/18/379 b3170v B 3170 tda 1006 VEB mikroelektronik spannungsregler b 3170 tda 1083 TDA 1013 A283D tda 1042 b3170

    3165* intel

    Abstract: 82360SL intel 80386SL twc np 6001 28f200 tsop intel 28f200bx 28F002BX 28F002BX-B 28F002BX-T 28F200BX
    Text: INTEL CORP HEHORY/PLD/ SbE D • 4fl2bl?b 007bBS3 flTb m i T L Z 0M lF K ß ! ilÄ T 0®If!!] in te l 'T W o 'K V ¿ k 28F200BX-T/B, 28F002BX-T/B 2 MBIT (128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B


    OCR Scan     		PDF 46Ebl7b QQ7b353 28F200BX-T/B, 28F002BX-T/B x8/x16 28F200BX-T, 28F200BX-B 16-bit 32-bit 28F002BX-T 3165* intel 82360SL intel 80386SL twc np 6001 28f200 tsop intel 28f200bx 28F002BX 28F002BX-B 28F200BX

    LM 3140

    Abstract: LM 3141 x-band diode
    Text: Whp% H E W LE T T mLEM P AC KAR D H erm etic PIN D iodes for Stripline/M icrostrip S w itch es/ A ttenuators 5082.3140 Technical Data 5082-3141 5082-3170 Features • B ro ad b an d O peration HF through X-Band • Low In se rtio n Loss Less than 0.5 dB to 10 GHz


    OCR Scan     		PDF

    LM 3141

    Abstract: No abstract text available
    Text: HEWLETT-PACKARD/ CHPNTS blE » • 4 4 4 ^ J j lieWLETT ^ PA C K A R D H erm etic PIN D iod es for Stripline/M icrostrip S w itch es/ A tten uators 5082.3140 Technical Data 5082-3141 5082-3170 Features • B ro a d b a n d O p e ra tio n HF through X-Band


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ir r ig l PRELIMINARY 2-MBIT 128K X 16, 256K X 8 SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B • Intel SmartVoltage Technology — 5V or 12V Program/Erase — 3.3V or 5V Read Operation — Increased Programming Throughput


    OCR Scan     		PDF 28F200BV-T/B, 28F200CV-T/B, 28F002BV-T/B x8/x16-Selectable 28F200 32-bit 28F002B Architectu-60 AP-611 28F002/200BX-T/B

    Untitled

    Abstract: No abstract text available
    Text: ONIF^IRIMlAirOON in te i 28F200BX-T/B, 28F002BX-T/B 2 MBIT 128K x 16, 256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x8/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs x8-only Input/Output Architecture


    OCR Scan     		PDF 28F200BX-T/B, 28F002BX-T/B x8/x16 28F200BX-T, 28F200BX-B 16-bit 32-bit 28F002BX-T 28F002BX-B E28F002BX-80

    MPF521

    Abstract: No abstract text available
    Text: 'MOTOROLA S C -C X S T R S / R F > 4b D E '^b B ^B SM □DSllaTM 2 § ~ 0 "T- 3 l-cP.S' MOTOROLA MPF521 SEMICONDUCTORS K J P.O. BO X 20912 • PHOENIX, A RIZO N A 85036 N -C H A N N E L DUAL G ATE D O U B LE -D IF FU SE D M ETA L O X ID E F IE LD -E FF E C T


    OCR Scan     		PDF MPF521 MPF521

    k 4431

    Abstract: No abstract text available
    Text: in te i 28F200BX-T/B, 28F002BX-T/B 2 MBIT 128K x 16,256K x 8 BOOT BLOCK FLASH MEMORY FAMILY x6/x16 Input/Output Architecture — 28F200BX-T, 28F200BX-B — For High Performance and High Integration 16-bit and 32-bit CPUs Very High-Performance Read — 60/80 ns Maximum Access Time


    OCR Scan     		PDF 28F200BX-T/B, 28F002BX-T/B x6/x16 28F200BX-T, 28F200BX-B 16-bit 32-bit 28F002BX-T 28F002BX-B E28F002BX-60 k 4431

    MRF580

    Abstract: MRFC581 ic tms 1000 MRF580A MRFC581A A581 2771 17t Motorola 581
    Text: 4bE D MOTOROLA SC C X ST R S /R F • MOTOROLA b 3 b ? 2 S 4 O G W Ô b S ■ flOTb ~P -3 V O S ■ SEMICONDUCTOR MRF580,A MRF581,A MRFC581,A TECHNICAL DATA The R F Line NPN SILICON HIGH FREQUENCY TRANSISTORS . . . designed for high current low power am plifiers up to 1.0 GHz.


    OCR Scan     		PDF MRF580 MRF581 MRFC581 MRF580A, MRF581A, MRFC581A ic tms 1000 MRF580A A581 2771 17t Motorola 581

    diode E1110

    Abstract: lN4002 LN4003 ANA 618 20010 TDB 0123 km b3170 E1110 Diode UB8560D MAA723 moc 2030
    Text: elektronik-bauelem ente I WT VD AVL 1 /8 7 Bl. 2 E r l ä u t e r u n g e n z u m I n h a l t und zu d e n A n g a b e n d e r B a u e l e m e n t e - V e r g l e i c h s l i s t e D ie B a u e l e m e n t e - V e r g l e i c h s l i s t e e n t h ä l t a l l e in d e r B i l a n z v e r a n t w o r t u n g d e s V E B K o m b i n a t


    OCR Scan     		PDF