B 435 TRANSISTOR Search Results

B 435 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

B 435 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CS92B Abstract: No abstract text available Text: 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Package Details - TO-92 Mechanical Drawing SYMBOL A (DIA) B C D E F G H I DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.175 0.205 4.45 5.21 0.170 0.210 4.32 5.33 0.500	Original	/\\blrsndf001\data\production\PARM\Common 15-Nov-2010 CS92B	PDF
bd435 fairchild Abstract: No abstract text available Text: BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted	Original	BD433/435/437 BD434, BD436 BD438 O-126 BD433 BD435 BD437 bd435 fairchild	PDF
C2N3704 Abstract: 2N3704 2N3706 2n3705 transistor 2n3704 2n3704 transistor 2N3704 datasheet Text: Datasheet Central 2N3704 2N3705 2N3706 Sem iconductor Corp. SILICON NPN TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE ( EC B ) Manufacturers of World Class Discrete Semiconductors DESCRIPTION	OCR Scan	2n3704 2n3705 2n3706 t0-92 2N3706 2N37Q5 2N3704 C2N3704 transistor 2n3704 2n3704 transistor 2N3704 datasheet	PDF
Transistor BC109 Abstract: 8C109 BC109 applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 BC108 transistor BC107A BC107 bc109c Text: Datasheet 1 BC108,A,B,C BC1 0 9 , B, C BC 0 7 , A , B E O l l ll U ff H V w V lI l1 semiconductor Corp- NPN SI LI CON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 1 JEDEC T O - 8 CASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	BC107 BC108 BC109 BC107, BC108, BC107A, BC108A) BC107B, BC108B, Transistor BC109 8C109 applications of Transistor BC108 TRANSISTOR bc108 Transistor BC107 BC108 transistor BC107A bc109c	PDF
MPQ2369 Abstract: No abstract text available Text: Data Sheet Central Sem iconductor Corp. m _ _ b t m MPQ.2369 NPN S IL IC O N QUAD TRANSISTOR 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 JEDEC T O - 116 CASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	MPQ2369 O-116 100mA 100MHz l40kHz	PDF
TN3725 Abstract: TN3724 Text: Datasheet Central TN3724 TN3725 Semiconductor Corp. NPN SI LI CON SWITCHING TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-237 CASE (EBC) Manufacturers of World Class Discrete Semiconductors U t b L K I r I I UN	OCR Scan	TN3724 TN3725 T0-237 TN3724, TN3725 500mA, 00MHz TN3724	PDF
2N3251 Abstract: transistor 2N3251 2N3250 2N3250A 2N3251A Text: Datasheet 2N3250 EflHffW 1 i i B v n n iI • _ ^ - - M 2N3250A 2N3251 2N3251A se m ico n d u cto r worp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 PNP SILICON TRANSISTOR JED EC TO-18 CASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	2N3250 2N3250A 2N3251 2N3251A 2N3250 2N3251 transistor 2N3251 2N3250A 2N3251A	PDF
"P-Channel JFET" Abstract: CMPF5460 CMPF5461 CMPF5462 MARKING CODE 16 transistor sot23 p-channel jfet SOT-23 vhz SOT-23 "vhz" Text: Datasheet r o w 1fli— • l M l sem iconductor worp. h m a S ^ b a mMm m« A CMPF5460 CMPF5461 CMPF5462 mm SURFACE MOUNT SILICON P-CHANNEL JFET 145 Adams Ave., Hauppauge, NY 11788 USA Phone 516 435-1110 FAX (516) 435-1824 SOT-23 CASE Manufacturers of World Class Discrete Semiconductors	OCR Scan	CMPF5460 CMPF5461 CMPF5462 OT-23 100Hz "P-Channel JFET" CMPF5462 MARKING CODE 16 transistor sot23 p-channel jfet SOT-23 vhz SOT-23 "vhz"	PDF
t125 switch Abstract: BUK437-600B Text: PHILIPS INTERNATIONAL bSE D E3 711085b OObaSBb 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	7110A2b BUK437-600B t125 switch BUK437-600B	PDF
Untitled Abstract: No abstract text available Text: BD433, BD435, BD437 BD434, BD436, BD438 BD433, 435, 437 BD434, 436, 438 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Medium power linear and Switching Applications PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM rr 7.8 B 10.5 10.8	OCR Scan	BD433, BD435, BD437 BD434, BD436, BD438 00121D	PDF
transistor 438 Abstract: TRANSISTOR BD 436 A8550 BD433B TRANSISTOR BD 437 TRANSISTOR 434 Text: BD434/436/438 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POW ER LINEAR AND SWITCHING APPLICATIONS TO -126 • Com plem ent to BD433, B D 435 and BD 437 respectively ABSO LU TE MAXIMUM RATINGS Sym bol C h ara cte ristic Collector B a s e Voltage : BD 434 : BD 436	OCR Scan	BD434/436/438 BD433, BD436 BD438 transistor 438 TRANSISTOR BD 436 A8550 BD433B TRANSISTOR BD 437 TRANSISTOR 434	PDF
Philips 1H0 Abstract: LD25C BUK437-600B Text: P H IL I PS I N T E R N A T I O N A L bSE » ES 7 1 1 0 0 2 b D G b 3 R E b 435 B P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK437-600B Philips 1H0 LD25C	PDF
Untitled Abstract: No abstract text available Text: • bbSB'iai DDESTb? 435 » A P X N AMER PHILIPS/DISCRETE P XT2222/A b?E D ;v SILICON PLANAR EPITAXIAL TRANSISTOR NPN silicon planar epitaxial transistor, housed in a SOT89 envelope. It is intended for switching and linear applications. The complementary type is PXT2907/A.	OCR Scan	XT2222/A PXT2907/A. PXT2222 PXT2222A x10-4	PDF
NPN Transistor 2N3055 Abstract: transistor 2N3055 2N3055 J 2N3055 transistor k 525 Text: Silicon NPN Transistor 2N3055 Dim. Inches Minimum Pin 1 — Base Pin 2 — E m itte r Pin 3 — Collector A B C D E F G H J K L M M illim eter Maximum Minimum _ .250 .435 .038 1.177 .655 .420 - .151 .205 - .875 .450 -.043 1.197 .675 .440 .525	OCR Scan	2N3055 O-204AA NPN Transistor 2N3055 transistor 2N3055 2N3055 J 2N3055 transistor k 525	PDF

B634X Abstract: lu1414 Standard TTL AOI Dual 2-Wide 2-Input LU18 c17b2 H8E0 Text: FUJITSU MICROELECTRONICS 31E I El 3 7 i n 7 ba ÜG13>435 b B F M 0 T - n - l - D January 1990 Edition 1.1 P R O D U C T PR OFILE AU Series CMOS Gate Arrays DESCRIPTION Tha AU series of 1 .2 \|im CMOS gate arrays, available in eight device types with from 1 0 K to 100K gates, achieves the ultra fast	OCR Scan		PDF
AB marking code diode Abstract: BFR101B BFR101A Text: 7110fl£b G O b T l b M 435 • P H I N BFR101A BFR101B N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR S ym m etrical n-channel silicon ju n c tio n fie ld -e ffe c t tran sisto r, designed p rim a rily fo r use as a source fo llo w e r w ith the in p u t protected against successive voltage surges by a fo rw a rd and reverse integrated	OCR Scan	BFR101A BFR101B BFRT01B AB marking code diode BFR101B	PDF
transistor d325 Abstract: TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285 Text: ESC D • Ô235b05 QQ043b3 M H S I E â NPN Silicon Epibase Transistors i - k , ■? j - H ' SIEMENS AKTIENGESELLSCHAF BD 433 BD 435 BD 437 BD 439 BD 441 The transistors BD 433, BD 435, BD 437, BD 439, and BD 441 are NPN silicon epibase power transistors in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . The collector	OCR Scan	053SbOS 00043L3 433/BD 435/BD 437/BD 439/BD 441/BD fl23SfcÂ ---0436r BD433. transistor d325 TRANSISTOR BD 437 transistor BD 141 BD PNP 433 transistor d217 siemens BO 410 transistor BD transistor 433 Mhz d285	PDF
bd437 siemens Abstract: transistor d437 D437 transistor bd 439 Text: ESC D • ôSBSbOS QQQ43b3 4 M S I E 6 • -h ' z i -H NPN Silicon Epibase Transistors ' BD 433 BD 435 0 -BD 437 BD 439 BD 441 SIEMENS AKTIENGESELLSCHAF The transistors BD 4 3 3 , BO 4 3 5 , BD 4 3 7 , BD 4 3 9 , and BD 441 are NPN silicon epibase	OCR Scan	QQQ43b3 fi235b05 BD433 BD439 BD441 BD437. BD433. BD433, BD435, bd437 siemens transistor d437 D437 transistor bd 439	PDF
SC08810 Abstract: B0435 d433 bd 149 D435 BD437-BD438 BD 435 d437 BD PNP Text: SGS-THOMSON BD433/5/7 BD434/6/8 iy COMPLEMENTARY SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in	OCR Scan	BD433/5/7 BD434/6/8 BD433, BD435, BD437 OT-32 BD433 BD434, BD436, BD438 SC08810 B0435 d433 bd 149 D435 BD437-BD438 BD 435 d437 BD PNP	PDF
T0-126 pin configuration Abstract: No abstract text available Text: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D 711DflSb GDMSTOL, RS3 H P H I N r-3 ?-n emitter collector base lo ' cm PIN CONFIGURATION July 1991 193 MAX. UNIT - 22 32 45 60 80 V	OCR Scan	O-126 BD434, BD436, BD438, BD440 BD442 BD433/435/437/439/441 711DflSb BD433 T0-126 pin configuration	PDF
d433 Abstract: 8D437 B0435 BD436 BD437 BD435-25 BD439 BD441 BD433-25 BD433 Text: P h ilip s S e m ico n d u cto rs _ Prelim inary sp ecification Silicon epitaxial-base transistors D ESCRIPTIO N Q UICK R E F E R E N C E DATA PINNING • TO-126 SOT32 DESCRIPTION 1 emitter 2 collector 3 base SYM BOL V cE S PARAM ETER collector-emitter voltage	OCR Scan	BD433/435/437/439/441 O-126 BD434, BD436, BD438, BD440 BD442 BD433 B0435 d433 8D437 B0435 BD436 BD437 BD435-25 BD439 BD441 BD433-25 BD433	PDF
D441 Abstract: BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437 Text: Philips Semiconductors Preliminary specification Silicon epitaxial-base transistors PHILIPS INTERNATIONAL DESCRIPTION SbE D • 711DfiSb □D4SclDti *153 ■ P H I N QUICK REFERENCE DATA SYMBOL ^CES PINNING - TO-126 SOT32 DESCRIPTION 1 emitter 2 collector	OCR Scan	BD433/435/437/439/441 O-126 BD434, BD436, BD438, BD440 BD442 711DflSb BD433 D441 BD436 437 bd 8043 BD439 MHC11 BD433 BD434 BD435 BD437	PDF
tfk 434 Abstract: tfk 436 tfk 435 bd 435 Bo435 tfk u 436 BD433 bd435 DIN125A R 433 A Text: BD 433 *BD 435 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anwendungen: NF-Endstufen Applications: AF-output stages Besondere Merkmale: • Niedrige Betriebsspannungen speziell für Autoradiobetrieb • Hohe Stromverstärkung	OCR Scan	BD433, tfk 434 tfk 436 tfk 435 bd 435 Bo435 tfk u 436 BD433 bd435 DIN125A R 433 A	PDF
BG433 Abstract: Bo435 vertical tv deflexion BD 435 sus 433 Text: BD433 BD435 NPN S IL IC O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS S IL IC IU M NPN. BASE E P IT A X IE E Compì, o f BD 4 3 4 , BO 436 P R E L IM IN A R Y D A T A NOTICE P R E LIM IN A IR E These transistors are intended for complemen tary or quasi complementary symetry ampli	OCR Scan	BG433 Bo435 vertical tv deflexion BD 435 sus 433	PDF

B 435 TRANSISTOR Search Results

B 435 TRANSISTOR Result Highlights (5)

B 435 TRANSISTOR Datasheets Context Search

CS92B

bd435 fairchild

C2N3704

Transistor BC109

MPQ2369

TN3725

2N3251

"P-Channel JFET"

t125 switch

Untitled

transistor 438

Philips 1H0

Untitled

NPN Transistor 2N3055

B634X

AB marking code diode

transistor d325

bd437 siemens

SC08810

T0-126 pin configuration

d433

D441

tfk 434

BG433