centronic LD2
Abstract: LD2-5A LD12-5A LD16-5A LD16-5C LD20-5 LD35-5 LD50-5
Text: CENTRONIC LTD hse t> m m s i a ? o o o o o n b • c e n t r*y/-v£r* Silicon Photodetectors_ Series 5 Low Cost Photovoltaic Linear Arrays The Series 5 are a range of multiple element low cost linear arrays for photovoltaic operation offering both high blue sensitivity and high
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LD12-5A
LD16-5A
LD16-5C
LD20-5
LD35-5*
LD50-5
centronic LD2
LD2-5A
LD35-5
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Untitled
Abstract: No abstract text available
Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor SYMBOL FEATURES • • • • IRF640, IRF640S QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Low thermal resistance V dss —200 V lD = 16 A
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IRF640,
IRF640S
IRF640
T0220AB)
IRF640S
OT404
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PHN220
Abstract: 98 100 16 capacitor SOT96
Text: Objective specification Philips Semiconductors TrenchMOS transistor FEATURES PHN220 SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance
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PHN220
PHN220
98 100 16 capacitor
SOT96
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GIS 110 kV
Abstract: No abstract text available
Text: Philips Semiconductors Product specification BUK9880-55 TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very
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BUK9880-55
OT223
OT223.
35\im
GIS 110 kV
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BUK445
Abstract: BUK445-60A BUK445-60B
Text: PHILIPS INTERNATIONAL bSE ]> B 7H0fl2b 0Db3Tflb TOT • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711002b
BUK445-60A/B
-SOT186
DS/V-12/
ID/100
BUK445
BUK445-60A
BUK445-60B
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Untitled
Abstract: No abstract text available
Text: CENTRONIC LTD MSE D m s ia ? ooooon t cENTr*y/-y^- Silicon Photodetectors Series 5 Low Cost Photovoltaic Linear Arrays The Series 5 are a range of m ultiple elem ent low cost linear arrays for photovoltaic operation offering both high blue sensitivity and high
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lg ipm
Abstract: PHT11N06T 25C312
Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET PHT11N06T GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the
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PHT11N06T
OT223
OT223.
lg ipm
PHT11N06T
25C312
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LD25C
Abstract: BUK456 BUK456-800A BUK456-800B T0220AB
Text: N AUER P H I L I P S / D I S C R E T E b'lE D • bbS3131 □D3DfccIQ 4 1 7 W A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3131
30bRQ
BUK456-800A/B
T0220AB
BUK456
-800A
-800B
LD25C
BUK456-800A
BUK456-800B
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHX4N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHX4N40E
OT186A
PHX4N40E
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BUK454-500B
Abstract: BUK454 BUK454-500A T0220AB
Text: Philips Components BUK454-500A BUK454-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,
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BUK454-500A
BUK454-500B
BUK454
-500A
-500B
T0220AB
M89-1160/RC
BUK454-500B
BUK454-500A
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PHF14NQ20T
Abstract: PHX14NQ20T
Text: Product specification Philips Semiconductors N-channel TrenchMOS transistor PHX14NQ20T , PHF14NQ20T SYMBOL FEATURES QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching V DSS = 2 0 0 V lD = 7 .6 A ^ ds on — 2 3 0 m£2
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PHX14NQ20T,
PHF14NQ20T
PHX14NQ20T
OT186A
OT186
OT186
O-220
OT186;
PHF14NQ20T
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BSH201
Abstract: PHP222
Text: Product specification Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES BSH201 SYMBOL QUICK REFERENCE DATA V DS = -6 0 V • Low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package
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BSH201
BSH201
PHP222
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PHB65N06T
Abstract: T404
Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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PHB65N06T
OT404
PHB65N06T
T404
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK7508-55
T0220AB
-ID/100
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transistor Ip
Abstract: BUK426-200A BUK426-200B
Text: N AMER P H I L I P S / D I S C R E T E 2SE bbSBTBl D 0ÜSÜ5S0 5 B U K 426-200A B U K 426-200B PowerMOS transistor T -3 7 -il QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope.
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BUK426-200A
BUK426-200B
BUK426
-200A
-200B
transistor Ip
BUK426-200B
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BUK437-400B
Abstract: DIODE JS.4 GS 069 LF
Text: N ANER P H I L I P S / D I S C R E T E LTE D • bbSBSBl D030MÔD BUK437-400B PowerMOS transistor GENERAL DESCRIPTION N-chanrtel enhancement mode field-eff ect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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D030MÃ
BUK437-400B
BUK437-400B
DIODE JS.4
GS 069 LF
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a80J
Abstract: PHB80N06LT PHP80N06LT T0220AB 600 V logic level fet
Text: Product specification Philips Semiconductors TrenchMOS transistor Logic level FET SYMBOL FEATURES • • • • • • PHP80N06LT, PHB80N06LT QUICK REFERENCE DATA VDSS = 55 V ’Trench’ technology Very low on-state resistance Fast switching Stable off-state characteristics
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PHP80N06LT,
PHB80N06LT
PHP80N06LT
T0220ABg
T0220)
a80J
PHB80N06LT
T0220AB
600 V logic level fet
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BSH202
Abstract: VH29
Text: Product specification Philips Semiconductors P-channel enhancement mode MOS transistor FEATURES BSH202 SYMBOL QUICK REFERENCE DATA VDS = -30 V • Low threshold voltage • Fast sw itching • Logic level com patible • S ubm iniature surface m ount package
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BSH202
BSH202
VH29
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PHB80N06T
Abstract: T404
Text: Product specification Philips Semiconductors TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device
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PHB80N06T
OT404
PHB80N06T
T404
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