BUK445 Search Results

BUK445-500B

Contextual Info: PHILIPS INTERNATIONAL b5E P m 711002b DDbMDOb BTb • PHIN Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GEN ERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK416-100BE

Abstract: 200B BUK437-500B BUK436-200A BUK416-200AE BUK416-100AE
Contextual Info: Power Devices Power MOSFET Transistors General Purpose in order of Voltage/Ros on (corn.) V „s MAX (V) Type No. Package Outline Iq max Ptot max (W> Rq S ON max (A) ( ft) 60 60 60 60 60 BUK445-60A BUK436-60B BUK456-60B BUK456-60A BUK436-60A SO T-186* SOT-93

Contextual Info: N AMER PHI LIP S/ DIS CR ETE ^ 5 3 7 3 1 D020400 h 5SE D BUK445-400A BUK445-400B PowerMOS transistor r - 37 - O ? GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK445-600B

Contextual Info: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK445

Abstract: K445 BUK445-500A BUK445-500B
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 DOSOmO =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T -2 1 -0 1 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK445

Abstract: BUK445-500A BUK445-500B IE-04
Contextual Info: N AMER PHI LI PS /DIS CR ETE 2SE D • ^53131 0020410 =1 ■ BUK445-500A BUK445-500B PowerMOS transistor QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: -7 - 3 9 - 0 9 Philips Components Data sheet status Preliminary specification date of issue March 1991 BUK 475-500B PowerMOS transistor Replaces BUK445-500A 'S MILIPS INrrRNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

V10-40 diode philips

Abstract: V10-40 diode D02G BUK445-450B C25F SL 100 power transistor
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbSBTBl 0G204QS S ■ PowerMOS transistor BUK445-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK445-600B

Abstract: BUK445 BUK445-600A
Contextual Info: N AMER P H I LI PS /D ISCR ET E 5SE D • ^53=131 0020415 Ô ■ PowerMOS transistor BUK445-600A BUK445-600B r-3 ^ -0 ? GENERAL DESCRIPTION SYMBOL CO O > N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

100-P

Abstract: BUK445 BUK445-400A BUK445-400B
Contextual Info: N AMER PHILIPS/DISCRETE 5SE ^53=531 D OOSDHOQ b BUK445-400A BUK445-400B PowerMOS transistor T - 3 7 -0 7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic lull-pack envelope. The device is intended for use in Switched Mode Power Supplies

TRANSISTOR SE 135

Abstract: IE-02 BUK445-450B BUK445-450
Contextual Info: N AMER P H I L I P S / D I S C R E T E 25E D • ^53^31 0G204QS S ■ PowerMOS transistor BUK445-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

K445

Abstract: BUK445 BUK445-500A BUK445-500B
Contextual Info: N AMER PHI LIP S/ DI SC RE TE 2SE D • ^53=131 D O S O m O =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T - 2 1 - 0 1 GENERAL DESCRIPTION N-channel enhancem ent mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: N AMER PHI LIP S/ DI SCR ET E 25 E D b b 5 3 T 31 0 0 2 0 4 1 0 =1 • BUK445-500A BUK445-500B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

30572

Abstract: BUK445-500B TRANSISTOR na 44
Contextual Info: b^E D N AMER PHILIPS/DISCRETE • bbSBSBl 0D3DS7G 7MÔ H A P X Product Specification Philips Semiconductors BUK445-500B PowerMOS transistor GENERAL DESCRIPTION N-channe! enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK445-400A

Abstract: transistor 3707 BUK445 BUK445-400B
Contextual Info: N AMER PHI LI PS /DIS CR ETE 55E D • 1^53*131 G020400 h PowerMOS transistor BUK445-400A BUK445-400B T -3 7 -0 ? N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

BUK445-600A

Abstract: BUK445 envelope BUK445-600B tg 25 600b TG-11
Contextual Info: N AUER P H I L I P S / D I S C R E T E 5SE D • 1^53=131 0 0 2 0 4 1 5 Ô ■ PowerMOS transistor BUK445-600A BUK445-600B QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

sd 431 transistor

Contextual Info: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in

Contextual Info: N AMER PHILIPS/DISCRETE bRE D • bbS3R31 0D3QSbS 3fi0 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK445

Abstract: BUK445-60A BUK445-60B M/TRANSISTOR sf 249
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • ^53^31 QQ30SSD ^ST HIAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

STK411-230E

Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

Philips transistor k1

Abstract: BUK445-600B
Contextual Info: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a

BUK445-60A

Abstract: BUK445 BUK445-60B 9ss 48 TRANSISTOR
Contextual Info: N AMER PHI LIPS/DISCRETE bTE D • ^ 53^31 Q Q 30SSD ^ST HIAPX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263