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    ENVELOPE Search Results

    ENVELOPE Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    LM3291TMX/NOPB Texas Instruments RF Power Envelope Modulator for Power Amplifiers 12-DSBGA -30 to 85 Visit Texas Instruments
    LM3291TME/NOPB Texas Instruments RF Power Envelope Modulator for Power Amplifiers 12-DSBGA -30 to 85 Visit Texas Instruments
    LM3290TME/NOPB Texas Instruments RF Power Envelope Modulator for Power Amplifiers 30-DSBGA -30 to 85 Visit Texas Instruments
    LM3290TMX/NOPB Texas Instruments RF Power Envelope Modulator for Power Amplifiers 30-DSBGA -30 to 85 Visit Texas Instruments

    ENVELOPE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    L4991

    Abstract: RS421A
    Text: www.hamlin.com MISM-3V1 REED SWITCH • • • • • • Features Surface mounting normally open switch Ultra-miniature size with 7.00mm x 1.80 mm 0.276” x 0.071” glass envelope Capable of switching 170Vdc or 0.5A at up to 10W 1012 Ohms insulation resistance


    Original     		PDF 170Vdc B2737 L4991 RS421A

    BTA212

    Abstract: 600D 600E BT138
    Text: Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation BTA212 series D, E and F GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated guaranteed commutation triacs in a plastic envelope intended for use in motor control circuits or with other highly inductive


    Original     		PDF BTA212 O220AB BTA212BTA212BTA212Repetitive 600D 600E BT138

    600D

    Abstract: 600E 800E BT138 BTA212B
    Text: Philips Semiconductors Product specification Three quadrant triacs guaranteed commutation GENERAL DESCRIPTION Passivated guaranteed commutation triacs in a plastic envelope suitable for surface mounting intended for use in motor control circuits or with other highly


    Original     		PDF OT404 BTA212B BTA212BBTA212BBTA212BRepetitive 600D 600E 800E BT138

    CT01-5/2W

    Abstract: OP07 12v 10A transformer
    Text: Precision Current Transformer Model： ：CT03-□/□ Name： ： Precision Current Transformer Precision Current Transformer 1. Features 1 PBT box endures high temperature and corruption. 2 ) Epoxy resin filled and enveloped, good isolation and antiimpact capacity.


    Original     		PDF ModelCT03-/ ExampleCT01-5/2 CT015 CT025 CT035/2 50PPM. CT01-5/2W OP07 12v 10A transformer

    Untitled

    Abstract: No abstract text available
    Text: BDT65F; BDT65AF BDT65BF; BDT65CF PHILIPS INTERNATIONAL SbE 7110flSb 00435^0 4Sci M P H I N T ~ 33 SILICON DARLINGTON POWER TRANSISTORS N PN silicon darlington power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base. The devices are designed for audio output stages and general amplifier and switching applications.


    OCR Scan     		PDF BDT65F; BDT65AF BDT65BF; BDT65CF 7110flSb BDT65F

    silicon planar epitaxial transistors

    Abstract: No abstract text available
    Text: BCY70 to 72 PHILIPS IN TERNATIONA L SbE D 711 002 b DOMElOti bTb BIP HIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes intended fo r general purpose industrial applications. The BCY71 is a low noise version. QUICK REFERENCE D A TA


    OCR Scan     		PDF BCY70 BCY71 T-27-09 711002b silicon planar epitaxial transistors

    2N6661

    Abstract: 2N6660 2N6661 transistor 2N6659 max 1988
    Text: MIE D m 2N6659 2N6660 2N6661 711Gfl2b □Q2t.7c 3 1 • P H I N PHILIPS INTERNATIONAL T-31'0& N-CHANNEL VERTICAL D-MOS TRANSISTOR N-channel enhancement mode vertical D-MOS transistor in a TO-39 envelope and designed for application as low-power, high-frequency inverters and. line drivers.


    OCR Scan     		PDF 2N6659 2N6660 2N6661 2N6661 T-39-05 2N6661 transistor max 1988

    BUK555-60A

    Abstract: BUK555-60B T0220AB
    Text: PHILIPS INT ER NA TI O N AL bSE D • TllQAEb 0DbM241 Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is Intended for use in


    OCR Scan     		PDF 0DbM241 BUK555-60A/B T0220AB BUK555 -ID/100 BUK555-60A BUK555-60B

    BUK455-500B

    Abstract: T0220AB
    Text: PHILIPS INTERNATIONAL bSE D B 711Gâ2ti GObMGTb SGÔ M P H I N Philips Semiconductors Product Spécification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK455-500B T0220AB 711DflEb BUK455-500B

    P112

    Abstract: TIP111 darlington npn tip 102 TIP110 TIP112 TIP115 TIP116
    Text: TIP110 TIP111 TIP112 PHILIPS INTERNATIONAL SbE D • 711002b 0043550 224 ■ PHIN T -3 3 -Z SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in m onolithic Darlington circu it fo r audio o u tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. P-N-P complements are


    OCR Scan     		PDF TIP110 TIP111 711002b T-33-Z T0-220AB TIP115, TIP116 TIP111 TIP112 P112 darlington npn tip 102 TIP112 TIP115

    BUX100

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon diffused power transistor BUX100 GENERAL DESCRIPTION High voltage, high speed glass passivated npn power transistor in a SOT82 envelope intended for use in high frequency electronic lighting ballast applications.


    OCR Scan     		PDF BUX100 711Dfi 711005b BUX100

    b0948

    Abstract: b0946 BD944 philips b0944 m lc 945 bd946 BD944 T 948 BD943 BD948
    Text: BD944 BD946 BD948 PHILIPS IN TE RN AT IO NAL 5bE ]> • 711DûSb 00430ÔM SILICON EPITAXIAL BASE POWER TRANSISTORS 0 T2 ■ I P H I N T *33 ~ P-IM-P silicon transistors in a plastic envelope intended fo r use in audio ou tput stages and general purpose amplifiers. N-P-N complements are BD943; 945 and 947.


    OCR Scan     		PDF bd944 bd946 bd948 711002b BD943; BD948. b0948 b0946 BD944 philips b0944 m lc 945 T 948 BD943 BD948

    philips bfq

    Abstract: BFQ263 BFQ263A RK 100
    Text: Product specification Philips S em iconductors - r & 3 ~ DESCRIPTION > 5 BFQ263; BFQ263A NPN 1 GHz video transistors • 5bE D PHILIPS IN TE RNATIONAL c 711062t. 0045b4û 331 « P H I N PINNING NPN silicon epitaxial transistor in a SOT5 TO-39 envelope with


    OCR Scan     		PDF BFQ263; BFQ263A 711062b 0045bi 711Qfl2b T-33-05 philips bfq BFQ263 BFQ263A RK 100

    BT153

    Abstract: TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062
    Text: PHILIPS INTERNATIONAL SflE J> 7110fl2t, 0053035 301 • PHIN B l iby _y F A S T TURN-OFF TH YR IS TO R Glass-passivated fast-turn-off thyristor in a T 0 -2 2 0 A B envelope, intended fo r use in inverter, pulse and switching applications. Its characteristics make the device extremely suitable for use in regulator,


    OCR Scan     		PDF 7110fl2t, T0-220AB T0-220AB. BT153 TAG thyristor Thyristor TAG thyristor TAG 13 BT153 fast turn off philips thyristor 239 thyristor TRIGGER PULSE TRANSFORMER 7Z82062

    BSR56

    Abstract: BSR57 BSR58
    Text: BSR56 BSR57 BSR58 TllDflSb OObTSbS TT5 « P H I N J V . N -C H A N N E L FETS S ym m etrical silicon n-channel d e p le tio n ty p e ju n c tio n fie ld -e ffe c t transistors in a plastic m icro m in ia tu re envelope intended fo r a p p lica tio n in th ic k and th in -film circu its. The transistors are intended fo r low power, chopper or sw itch in g applications in industrial service.


    OCR Scan     		PDF BSR56 BSR57 BSR58 bsr56 bsr57 bsr58Vqsm BSR56; BSR58

    8uk453

    Abstract: BUK453-60A BUK453-60B T0220AB
    Text: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF 7110fi2b BUK453-60A/B T0220AB BUK453 8uk453 BUK453-60A BUK453-60B

    m1722

    Abstract: 7215a BYQ27 Ultra Fast Recovery Double Rectifier Diodes
    Text: S fc.E D 7 iiD f l2 t. o o m n o m 2 m p h in T - 3 - / 7 BYQ27 SERIES PHILIPS INTERNATIONAL SbE D ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency double rectifier diodes in plastic envelopes, featuring low forward voltage drop, ultra fast reverse recovery times and soft recovery characteristic. They are intended fo r


    OCR Scan     		PDF T-03-Ã BYQ27 M3053 m1722 7215a Ultra Fast Recovery Double Rectifier Diodes

    BD201F

    Abstract: BDX77F BD203F BD202F BD204F BDX78F
    Text: J PHILIPS INTERNATIONAL SbE D • BD201F; BD203F; BDX77F 7110a2b 0Gl+2ÛDfi Ô4S ■ PHIN T - 3 3 ' O cf SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are B D 202F, BD204F and B D X 78F .


    OCR Scan     		PDF BD201F; BD203F; BDX77F 7110a2b T-33-0 OT186 BD202F, BD204F BDX78F. BD201F BDX77F BD203F BD202F BDX78F

    BFW92

    Abstract: philips bfw92 vk200 philips vk200.10 g04b030
    Text: Philips Semiconductors Product specification 7 NPN 1 GHz wideband transistor PHILIPS BFW92 INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It has a low noise over a wide current range, a very high power gain and good intermodulation properties. It is primarily intended for


    OCR Scan     		PDF BFW92 7110fl2b MEA391 MEA393 BFW92 philips bfw92 vk200 philips vk200.10 g04b030

    ht 25 transistor

    Abstract: BUK638-500B
    Text: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery


    OCR Scan     		PDF BUK638-500B 711DflSb ODb431S ht 25 transistor

    BUW13

    Abstract: BUW13A buw13a philips semiconductor BA102 BUW13A-S Philips BUW13A
    Text: Product specification Philips Semiconductors BUW13; BUW13A Silicon diffused power transistors High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended fo r use in converters, inverters, sw itching regulators, m oto r co n tro l systems etc.


    OCR Scan     		PDF BUW13; BUW13A BUW13 711D6Eb 0D777T7 711G82b BUW13A buw13a philips semiconductor BA102 BUW13A-S Philips BUW13A

    NDS 40-20

    Abstract: BUK437-500B DIODE BB2
    Text: PHILIPS INTERNATIONAL fc.5E D m 7110flSb □□t.3c121 RS3 • P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711002b BUK437-500B NDS 40-20 BUK437-500B DIODE BB2

    2222-809-05002

    Abstract: philips e3 Philips Electrolytic Capacitor 16v BLU60-12 B6PN
    Text: PHILIPS INTERNAT IO NAL bSE D E3 7110ÖSb DDLE7S1 =131 BLU60/12 l U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.


    OCR Scan     		PDF 711002b OT-119 BLU60/12 2222-809-05002 philips e3 Philips Electrolytic Capacitor 16v BLU60-12 B6PN

    fet MARKING MHp

    Abstract: sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S
    Text: BF996S PHILIPS INTERNATIONAL 5 bE D 711002b D 0 3 l+D7û ÖTß • PHIN F O R D E T A IL E D IN F O R M A T IO N SEE T H E L A T E S T ISSUE OF H A N D B O O K SC07 O R D A T A S H E E T T - 35-27 SILICON N-CHANNEL DUAL GATE MOS-FET D e pletion ty p e fie ld -e ffe c t tra n sisto r in a plastic SO T143 m icro m in ia tu re envelope w ith source and


    OCR Scan     		PDF BF996S OT143 OT143. fet MARKING MHp sot143 code marking MS FET marking code marking ANs marking L1 fet BF996S