Contextual Info: SO U R IAU 851 embase a collerette carree avec raccord droit a presse-etoupe square flange receptacle with straight sealing gland backshe/l 00J I HE 301 B00J " f LU y t a ille d e R E FE R E N C E S/ / W N U M B ER S L m axi b o ld e r shall size 8 A i so u d a r

transistor f422

Abstract: transistor f423 f422 transistor transistor f421 BV09 F423 fet 13187 RJ4B L442 bvoe
Contextual Info: CMOS-8LCX 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8LCX Packages NEC’s 3-volt CMOS-8LCX family consists of ultra-high performance, sub-micron gate arrays, targeted for

Contextual Info: SN74AHCT1G00 SINGLE 2-INPUT POSITIVE-NAND GATE SCLS316M – MARCH 1996 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 7.1 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V

bv0T

Abstract: 658X
Contextual Info: N E C ELECTRONICS INC b7E D • b4E75S5 QQ3T701 4bD HINECE CMOS-8L 3 -V O LT, 0.50-M IC R O N cm os g a te a r r a y s ä I M t L NEC Electronics Inc. P re lim in a r y Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high per­

transistor f422

Abstract: transistor f423 BKDF f422 transistor B00J f422 F423 fet 13187 RJ4B ru4f
Contextual Info: N E C ELECTRONICS INC b7E D NEC NEC Electronics Inc. I b *427525 Q D 3 ci 7 n bTD « N E C E CMOS-8LCX 3-VOLT, O.5O-MICRON CMOS GATE ARRAYS CROSSCHECK TEST SUPPORT Prelim inary Description O c to b e r 1 9 9 3 Figure 1. Various CMOS-8LCX Packages N EC 's 3-volt C M O S -8L C X family consists of ultra-high

bv0T

Abstract: F423 FV06 RJ4B 83YL-9164B "Single-Port RAM" B00J transistor f423 bewf diode ru4d
Contextual Info: CMOS-8L 3-VOLT, 0.50-MICRON CMOS GATE ARRAYS NEC Electronics Inc. Preliminary Description October 1993 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family consists of ultra-high performance, sub-micron gate arrays, targeted for applications requiring extensive integration and high

D65842

Abstract: diode ru4d 136-Pin CMOS7 BV09 180 nm CMOS standard cell library Synopsys
Contextual Info: SEC CMOS-8L 3-VOLT, 0.50-M ICRON CMOS GATE ARRAYS NEC Electronics Inc. Prelim inary Description O cto b er 1992 Figure 1. Various CMOS-8L Packages NEC’s 3-volt CMOS-8L family are ultra-high perform­ ance, sub-micron gate arrays, targeted for applications

Contextual Info: SN74AHCT1G00 SINGLE 2-INPUT POSITIVE-NAND GATE SCLS316M – MARCH 1996 – REVISED JANUARY 2003 D D D D D D D DBV OR DCK PACKAGE TOP VIEW Operating Range of 4.5 V to 5.5 V Max tpd of 7.1 ns at 5 V Low Power Consumption, 10-µA Max ICC ±8-mA Output Drive at 5 V

CY7BB991-7

Abstract: B00J AMD pal20v8 INTEL AP-72 Intel AP-726
Contextual Info: in tg l AP-726 APPLICATION NOTE Interfacing the i960 Jx Microprocessor to the NEC HPD98401* Local ATM Segmentation and Reassembly SAR Chip S e p te m b e r , 2 1 , 1 9 9 5 I Order Number: 272779-001 1-665 AP-726 Benefits of using the PCI-SDK include: This application note describes the interface between Intel's • The PCI-SDK plugs directly into a DOS-based

ADS10C00

Abstract: DCO RK MD EX 24 ED0 5PINS ds-16d WD60C31B WD10C00
Contextual Info: WESTERN DIGITAL CORP 3SS WESTERN DIGITAL SfiE » • ^710220 0017^70 Ö2 T HliIDC Storage LSI Applications Note " T -S Z -l^ WDRegional Office • U.S.A. WD Literature 800 832-4778 U.S.A. (800) 448-8470 Canada (714) 932-4900 International WD BBS: (714) PRODUCT: