siemens fet to92
Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
Text: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This
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DN3545
DSFP-DN3545
B052009
siemens fet to92
dn5mw
125OC
DN3545
DN3545N3-G
DN3545N8-G
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B052009
Abstract: No abstract text available
Text: Package Outline 3-Lead TO-39 Package Outline N2 ΦD ΦD1 Φa A β β Seating Plane 2 1 3 h 2 1 3 Φb α L j k Bottom View Symbol Dimension (inches) MIN NOM MAX α β 45O NOM 90O NOM Side View A Φa Φb ΦD ΦD1 h j k L .240 .190 .016 .350 .315 .009 .028
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DSPD-3TO39N2,
B052009.
DSPD-3TO39N2
B052009
B052009
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode
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VN2210
VN2210
DSFP-VN2210
D071411
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Untitled
Abstract: No abstract text available
Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure
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2N6661
2N6661
DSFP-2N6661
C042711
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2N6661
Abstract: No abstract text available
Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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2N6661
2N6661
DSFP-2N6661
C042711
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Untitled
Abstract: No abstract text available
Text: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.
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2N6660
2N6660
DSFP-2N6660
C031411
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125OC
Abstract: 2N6661
Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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2N6661
2N6661
DSFP-2N6661
B032610
125OC
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability
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VN2210
VN2210
DSFP-VN2210
E082013
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sivn
Abstract: VN2210 VN2210N2 VN2210N3-G jedec Package TO-39
Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VN2210
VN2210
DSFP-VN2210
D031411
sivn
VN2210N2
VN2210N3-G
jedec Package TO-39
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125OC
Abstract: 2N6660 Supertex Product Enhancement-Mode Vertical DMOS FET
Text: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and
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2N6660
2N6660
DSFP-2N6660
C031411
125OC
Supertex Product Enhancement-Mode Vertical DMOS FET
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Untitled
Abstract: No abstract text available
Text: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability
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VP2206
VP2206
DSFP-VP2206
D031411
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DSPD-3TO39N2
Abstract: No abstract text available
Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds
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VN2210
VN2210
DSFP-VN2210
D071411
DSPD-3TO39N2
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2206N2
Abstract: 125OC VP2206 VP2206N2
Text: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain
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VP2206
VP2206
DSFP-VP2206
C032610
2206N2
125OC
VP2206N2
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2206n2
Abstract: SIVP VP2206 VP2206N2 B06030
Text: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VP2206
VP2206
DSFP-VP2206
B060309
2206n2
SIVP
VP2206N2
B06030
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DN5m
Abstract: No abstract text available
Text: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage These depletion-mode normally-on transistors utilize
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DN3545
DSFP-DN3545
B052009
DN5m
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2206N2
Abstract: No abstract text available
Text: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► High input impedance and high gain
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VP2206
VP2206
DSFP-VP2206
E082313
2206N2
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125OC
Abstract: 2N6660 Supertex Product Enhancement-Mode Vertical DMOS FET
Text: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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2N6660
2N6660
DSFP-2N6660
B032610
125OC
Supertex Product Enhancement-Mode Vertical DMOS FET
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SIVN2210
Abstract: sivn 125OC VN2210 VN2210N2 VN2210N3-G
Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing
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VN2210
VN2210
DSFP-VN2210
C032610
SIVN2210
sivn
125OC
VN2210N2
VN2210N3-G
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