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    B100NH02L

    Abstract: STB100NH02L STB100NH02LT4 b100nh B100NH02L STMicroelectronics
    Text: STB100NH02L N-CHANNEL 24V - 0.0052 Ω - 60A D²PAK STripFET III POWER MOSFET TYPE STB100NH02L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 24 V < 0.006 Ω 60 A (2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.007 Ω @ 5 V RDS(ON) * Qg INDUSTRY’s BENCHMARK


    Original     		PDF STB100NH02L O-263) O-263 STB100NH02L B100NH02L STB100NH02LT4 b100nh B100NH02L STMicroelectronics

    b100nh

    Abstract: B100NH02L JESD97 STB100NH02L STB100NH02LT4
    Text: STB100NH02L N-channel 24V - 0.0052Ω - 60A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NH02L 24V <0.006Ω 60A(1) 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced ■


    Original     		PDF STB100NH02L STB100NH02L STB100NH02LT4 B100NH02L b100nh JESD97 STB100NH02LT4

    B100NH02L

    Abstract: B100NH B100NH02L STMicroelectronics st 393 JESD97 STB100NH02L STB100NH02LT4
    Text: STB100NH02L N-channel 24V - 0.0052Ω - 60A - D2PAK STripFET III Power MOSFET General features Type VDSS RDS on ID STB100NH02L 24V <0.006Ω 60A(1) 1. Value limited by wire bonding • RDS(ON) * Qg industry’s benchmark ■ Conduction losses reduced ■


    Original     		PDF STB100NH02L STB100NH02L B100NH02L B100NH B100NH02L STMicroelectronics st 393 JESD97 STB100NH02LT4